公开(公告)号：US20240158225A1

公开(公告)日：2024-05-16

申请号：US18075882

申请日：2022-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jung-Hao CHANG ,  Weng-Yi CHEN

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00476 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0353 ,  B81B2207/01 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2201/0176

Abstract: A micro electro mechanical system (MEMS) device and a method for manufacturing the same are provided. The MEMS device includes a substrate, a polymer film on the substrate and having a lower surface facing toward the substrate, a cavity passing through the substrate, and coil structures on the substrate and in the polymer film. The polymer film includes a corrugation pattern on the lower surface of the polymer film. A portion of the polymer film is exposed in the cavity.

公开(公告)号：US20240067519A1

公开(公告)日：2024-02-29

申请号：US18212617

申请日：2023-06-21

Applicant: Texas Instruments Incorporated

Inventor： John Wesley Hamlin ,  Kathleen Rose Ferreira ,  Sean C. O'Brien ,  Jose A. Martinez

IPC: B81C1/00 ,  B81B3/00 ,  G02B26/08

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  G02B26/0833 ,  B81B2201/042 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/017

Abstract: Example methods, systems, and apparatus described herein provide a minimally invasive technique of controlling shape and stress in a MEMS device. An example method includes depositing a layer of material continuously across a semiconductor wafer, exposing the layer of material to oxygen plasma to increase a relative amount of oxygen within the layer of material; and etching the layer of material after exposing the layer of material to the oxygen plasma.

公开(公告)号：US09908774B2

公开(公告)日：2018-03-06

申请号：US15024942

申请日：2014-09-15

Applicant: CAVENDISH KINETICS, INC.

Inventor： Mickael Renault

IPC: B81C1/00

CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

公开(公告)号：US20170050844A1

公开(公告)日：2017-02-23

申请号：US14827683

申请日：2015-08-17

Applicant: Texas Instruments Incorporated

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.

Abstract translation: 一种密封包装，其包括具有具有第一高度（101a）的MEMS结构（101）的表面的基底（110），所述基底被气密地密封到在所述MEMS结构上形成空腔的帽（120） 所述盖通过粘附到所述基板表面和所述盖的金属层的垂直堆叠（130）附接到所述基板表面，所述堆叠具有围绕所述MEMS结构的连续轮廓，同时与所述MEMS结构隔开距离（140）; 所述堆叠具有附着到所述基板的底部第一金属种子膜（131a）和粘附到所述底部第一种子膜的底部第二金属种子膜（131b），具有第一宽度（131c）和公共侧壁（138）的两种种子膜 ）; 另外，粘附到盖的顶部第一金属种子膜（132a）和粘附到顶部第一种子膜的顶部第二金属种子膜（132b），具有小于第一宽度的第二宽度（132c）的两种种子膜和共同的 侧壁（139）; 连接到包括金 - 铟金属间化合物的金属层（135）的底部和顶部金属种子膜，具有大于第一高度的第二高度（133a）的层（135）并且包围种子膜和共同侧壁。

公开(公告)号：US09556015B1

公开(公告)日：2017-01-31

申请号：US14925867

申请日：2015-10-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsai-Hao Hung ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Tao-Cheng Liu

IPC: H01L21/00 ,  B81B1/00 ,  B81C1/00

CPC classification number: B81B1/004 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/00087 ,  B81C1/00619 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2203/0118

Abstract: The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

Abstract translation: 本公开提供了一种用于微机电系统（MEMS）装置的衬底结构。 衬底结构包括帽和微机电系统（MEMS）衬底。 盖具有空腔，并且MEMS基板设置在盖上。 MEMS基板具有暴露空腔的多个通孔，并且通孔的纵横比大于30。

公开(公告)号：US20160229691A1

公开(公告)日：2016-08-11

申请号：US15023057

申请日：2014-12-04

Applicant: CSMC TECHNOLOGIES FABI CO., LTD.

Inventor： Errong JING

IPC: B81C1/00

CPC classification number: B81C1/00142 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/013

Abstract: A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.

Abstract translation: 制造薄膜支撑梁的方法包括：提供具有相对的第一和第二表面的基底; 在衬底的第一表面上涂覆牺牲层，并对牺牲层进行构图; 在所述牺牲层上沉积介电膜以形成电介质膜层，并在所述电介质膜层上沉积金属膜以形成金属膜层; 图案化金属膜层，并将金属膜层的图案区域划分成支撑梁部分的金属膜图案和非支撑梁部分的金属膜图案，其中支撑件的金属膜图案的宽度 光束部分大于最终支撑光束图案的宽度，并且非支撑光束部分的金属膜图案的宽度等于此时的最终非支撑光束图案的宽度的宽度; 在金属膜层和电介质膜层上进行光蚀刻和蚀刻，以获得最终的支撑束图案，最终的非支撑束图案和最终的电介质膜层，其中最终的电介质膜层用作最终支撑体的支撑膜 光束图案和最终的非支撑光束图案; 并去除牺牲层。

公开(公告)号：US20160052778A1

公开(公告)日：2016-02-25

申请号：US14467521

申请日：2014-08-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Earl Vedere Atnip ,  Raul Enrique Barreto ,  Kelly J. Taylor

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00365 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0167 ,  B81C2201/0178

Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract translation: 通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。

公开(公告)号：US20150005709A1

公开(公告)日：2015-01-01

申请号：US14317854

申请日：2014-06-27

Applicant: Changlin Pang ,  Jason Shih ,  Fukang Jiang ,  Changgeng Liu ,  Sean Caffey ,  Andrew Urazaki

Inventor： Changlin Pang ,  Jason Shih ,  Fukang Jiang ,  Changgeng Liu ,  Sean Caffey ,  Andrew Urazaki

IPC: A61M5/145 ,  B29C59/14

CPC classification number: A61M5/14586 ,  A61M5/14276 ,  A61M2005/14204 ,  B29C59/14 ,  B29C2791/004 ,  B29K2023/00 ,  B81B2203/0127 ,  B81C99/008 ,  B81C2201/0108 ,  F04B43/0054 ,  F04B45/04 ,  F16K2099/008

Abstract: A removable material is deposited or otherwise applied to a flat substrate surface in a pattern corresponding to desired corrugations in a membrane, e.g., a deflection diaphragm. The applied material serves as a scaffold for a polymeric material, which is applied thereover, and following cure or hardening, the polymeric material is removed to form a finished corrugated membrane.

Abstract translation: 将可移除材料沉积或以其它方式施加到平坦的基底表面上，图案对应于膜（例如偏转膜片）中的期望波纹。 施加的材料用作聚合材料的支架，其被施加到其上，并且在固化或硬化之后，去除聚合物材料以形成成品波纹膜。

公开(公告)号：US08357616B2

公开(公告)日：2013-01-22

申请号：US11918269

申请日：2006-04-14

Applicant: Vincent Linder ,  Declan Ryan ,  Byron Gates ,  Babak Amir-parviz ,  George M. Whitesides

Inventor： Vincent Linder ,  Declan Ryan ,  Byron Gates ,  Babak Amir-parviz ,  George M. Whitesides

IPC: H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00246 ,  B81C2201/0108 ,  B81C2203/0735 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: The present invention provides fabrication methods using sacrificial materials comprising polymers. In some embodiments, the polymer may be treated to alter its solubility with respect to at least one solvent (e.g., aqueous solution) used in the fabrication process. The preparation of the sacrificial materials is rapid and simple, and dissolution of the sacrificial material can be carried out in mild environments. Sacrificial materials of the present invention may be useful for surface micromachining, bulk micromachining, and other microfabrication processes in which a sacrificial layer is employed for producing a selected and corresponding physical structure.

公开(公告)号：US20120267825A1

公开(公告)日：2012-10-25

申请号：US13184564

申请日：2011-07-17

Applicant: Sung Jun LEE ,  Won Kyu JEUNG

Inventor： Sung Jun LEE ,  Won Kyu JEUNG

IPC: B29C70/00

CPC classification number: G01C19/56 ,  B81B2201/025 ,  B81C1/00182 ,  B81C2201/0108 ,  B81C2201/0187 ,  G01P15/0802 ,  G01P15/09

Abstract: The method of manufacturing an inertial sensor includes: (A) disposing a first mold 120 and a second mold 125 on both surfaces of a predetermined region R in a plate-shaped membrane 110, (B) forming a mass body 130, a post 140, and an upper cap 150 through a plating process or a filling process, (C) disposing a third mold 160 on an exposed surface of the first mold 120 and the mass body 130, and (D) forming a lower cap 170 through the plating process or the filling process. Since the mass body 130 is made of metal by a plating process or a filling process, the density of the mass body 130 may be increased and the mass body 130 may be formed to have a structure of a high aspect ratio, thereby improving the sensitivity of the inertial sensor 100.

Abstract translation: 惯性传感器的制造方法包括：（A）在板状膜110中的规定区域R的两面上设置第一模具120和第二模具125，（B）形成质量体130，柱140 ，以及通过电镀处理或填充处理的上盖150，（C）在第一模具120和质量体130的暴露表面上设置第三模具160，以及（D）通过电镀形成下盖170 过程或填充过程。 由于质量体130通过电镀处理或填充处理由金属制成，因此可以增加质量体130的密度，并且可以将质量体130形成为具有高纵横比的结构，从而提高灵敏度 的惯性传感器100。