公开(公告)号：US20090057577A1

公开(公告)日：2009-03-05

申请号：US12210103

申请日：2008-09-12

Applicant: N. William Parker

Inventor： N. William Parker

IPC: G21K5/10 ,  H01J3/14

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/043 ,  H01J2237/1534

Abstract: A direct-write electron beam lithography system employing a patterned beam-defining aperture to enable the generation of high current-density shaped beams without the need for multiple beam-shaping apertures, lenses and deflectors is disclosed. Beam blanking is accomplished without the need for an intermediate crossover between the electron source and the wafer being patterned by means of a double-deflection blanker, which also facilitates proximity effect correction. A simple type of “moving lens” is utilized to eliminate off-axis aberrations in the shaped beam. A method for designing the patterned beam-defining aperture is also disclosed.

Abstract translation: 公开了一种使用图案化的光束限定孔径以便能够产生高电流密度成形光束而不需要多个光束成形孔，透镜和偏转器的直写式电子束光刻系统。 实现光束消隐，而不需要通过双偏转消隐器对电子源和晶片进行图案化之间的中间交叉，这也有助于邻近效应校正。 使用简单类型的“移动透镜”来消除成形光束中的离轴像差。 还公开了一种用于设计图案化光束限定孔的方法。

公开(公告)号：US20080122462A1

公开(公告)日：2008-05-29

申请号：US12007911

申请日：2008-01-17

Applicant: Mari Nozoe

Inventor： Mari Nozoe

IPC: G01R31/305

CPC classification number: H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

公开(公告)号：US20080067403A1

公开(公告)日：2008-03-20

申请号：US11762182

申请日：2007-06-13

Applicant: Masato Muraki ,  Haruo Yoda

Inventor： Masato Muraki ,  Haruo Yoda

IPC: H01J3/14

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.

Abstract translation: 公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。 曝光装置包括检测带电粒子束的检测器，使带电粒子束偏转以利用带电粒子束扫描基板或检测器的偏转器，以及控制偏转器扫描多个扫描范围中的每一个的控制器 在具有带电粒子束的检测器上，并且基于扫描多个扫描范围时由检测器检测到的带电粒子束量计算撞击检测器的带电粒子束的强度分布。

公开(公告)号：US20060163498A1

公开(公告)日：2006-07-27

申请号：US11204050

申请日：2005-08-16

Applicant: Kenji Yoneda ,  Masahiko Niwayama

Inventor： Kenji Yoneda ,  Masahiko Niwayama

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J2237/0044 ,  H01J2237/043

Abstract: Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

公开(公告)号：US20050250224A1

公开(公告)日：2005-11-10

申请号：US11166231

申请日：2005-06-27

Applicant: Mari Nozoe

Inventor： Mari Nozoe

IPC: G01R31/28 ,  G01Q10/00 ,  G01Q30/04 ,  G01R31/307 ,  H01L21/00 ,  H01L21/66

CPC classification number: H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

公开(公告)号：US06335535B1

公开(公告)日：2002-01-01

申请号：US09344341

申请日：1999-06-25

Applicant: Koji Miyake ,  Tsukasa Hayashi ,  Hajime Kuwahara

Inventor： Koji Miyake ,  Tsukasa Hayashi ,  Hajime Kuwahara

IPC: H05H100

CPC classification number: H01J37/32412 ,  H01J2237/006 ,  H01J2237/043 ,  H01J2237/061 ,  H01J2237/08 ,  H01L21/0445 ,  H01L21/26506 ,  H01L21/76251 ,  H01L21/76254 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for implanting negative hydrogen ions includes the following steps. Plasma containing hydrogen is generated. Negative hydrogen ions are generated in the plasma. An electric field is formed between the plasma and a substrate. Negative hydrogen ions from the plasma is accelerated by using the electric field so as to implant negative hydrogen ions into a predetermined depth of a substrate.

Abstract translation: 用于注入负氢离子的方法包括以下步骤。 产生含有氢的等离子体。 在等离子体中产生负氢离子。 在等离子体和基板之间形成电场。 通过使用电场来加速来自等离子体的负氢离子，以便将负氢离子注入衬底的预定深度。

公开(公告)号：US5929439A

公开(公告)日：1999-07-27

申请号：US868650

申请日：1997-06-04

Applicant: Hideo Todokoro ,  Osamu Yamada

Inventor： Hideo Todokoro ,  Osamu Yamada

IPC: H01J37/22 ,  G02B21/00 ,  H01J37/147 ,  H01J37/28 ,  H01J37/26

CPC classification number: H01J37/28 ,  G02B21/002 ,  H01J2237/043 ,  H01J2237/22

Abstract: A scanned image to be observed or to be recorded is formed by a plurality of two-dimensional scanning times (N times), an irradiating charged particle beam or a light beam is blanked in a two-dimensional scanning unit, and the averaged irradiation intensity is adjusted by thinning a plurality (

Abstract translation: 通过多次二维扫描时间（N次）形成待观察或待记录的扫描图像，照射带电粒子束或光束在二维扫描单元中被消隐，并且平均的照射强度 通过在N次扫描中减少多个（

公开(公告)号：US5539203A

公开(公告)日：1996-07-23

申请号：US233513

申请日：1994-04-26

Applicant: Iwao Ohdomari

Inventor： Iwao Ohdomari

IPC: H01L21/265 ,  G01Q30/14 ,  G01Q30/16 ,  G01Q60/10 ,  G21K5/04 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3007 ,  H01J2237/043 ,  H01J2237/0805 ,  H01J2237/31713

Abstract: The present invention is directed to a low-energy (0 to 100 keV) or high-energy (1 to 4 MeV) single ion implantation system in which single ions are extracted from a focused ion beam or micro-ion beam by beam chopping. The low-energy single ion implantation system has, in combination with a focused ion beam system, an electrostatic deflector for beam chopping (20), an aperture for single ion extraction (21) and an electrode (35) for generating a retarding electric field to make the single ion soft-land on a specimen. The high-energy single ion implantation system has, in combination with an ion microprobe, a Cs sputter source (33) which enables dopant ion implantation and high LET ion irradiation. The single ion implantation method includes a step of implanting the extracted single ions from the both systems into the specimen at a predetermined target position with aiming accuracies of 50 nm.phi. and 1.5 .mu.m.phi., respectively.

Abstract translation: 本发明涉及一种低能量（0至100keV）或高能量（1至4MeV）单离子注入系统，其中通过束切割从聚焦离子束或微离子束中提取单个离子。 低能量单离子注入系统与聚焦离子束系统结合，用于束切割（20）的静电偏转器，用于单离子提取的孔（21）和用于产生延迟电场的电极（35） 使单个离子软土在样品上。 高能单离子注入系统与离子微探针组合具有能够进行掺杂剂离子注入和高LET离子照射的Cs溅射源（33）。 单离子注入方法包括分别将来自两个系统的提取的单个离子注入到预定目标位置的样品中的步骤，其瞄准精度分别为50nm phi和1.5μmphi。

公开(公告)号：US5331161A

公开(公告)日：1994-07-19

申请号：US938611

申请日：1992-09-01

Applicant: Iwao Ohdomari ,  Masaaki Sugimori ,  Junichi Murayama ,  Meishoku Koh ,  Katsunori Noritake ,  Takashi Matsukawa ,  Hiroaki Shimizu

Inventor： Iwao Ohdomari ,  Masaaki Sugimori ,  Junichi Murayama ,  Meishoku Koh ,  Katsunori Noritake ,  Takashi Matsukawa ,  Hiroaki Shimizu

IPC: G21H5/00 ,  G01Q90/00 ,  G21K1/04 ,  G21K1/087 ,  G21K5/04 ,  H01J27/02 ,  H01J37/09 ,  H01J37/147 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/28 ,  H01J2237/043

Abstract: The present invention concerns an ion irradiation system and has for its object to provide an ion irradiation system and method which enable one or more ions to be applied to a target point with high accuracy. The ion irradiation system according to the present invention comprises: an ion microprobe; a deflector for deflecting an ion microbeam generated by said ion microprobe; a micro slit for extracting a single or predetermined number of ions from said ion microbeam deflected by said deflector; a sample holder mechanism for holding a sample to be irradiated with said single or predetermined number of ions extracted through said micro slit; a scanning electron microscope mechanism for observing the surface of said sample in real time; a secondary electron detecting system for detecting secondary electrons which are emitted from the surface of said sample, said secondary electron detecting system including a secondary electron multiplier; and an electric field control circuit for controlling an electric field which is applied to said deflector, said electric field control circuit being composed of a clock generator, a counter connected to said clock generator and a high-voltage amplifier connected to said counter and having its output connected to said deflector; wherein said counter counts output signal pulses from said secondary electron multiplier and supplies a clock signal to said high-voltage amplifier of said electric field control circuit during counting of said single or predetermined number of ions and stops the supply of said clock signal to said high-voltage amplifier upon completion of counting of said single or predetermined number of ions, whereby said ion microbeam is chopped by said deflector one or more times instantaneously reverse its direction or deflection with respect to said micro slit, thereby extracting said single or predetermined number of ions through said micro slit.

Abstract translation: 本发明涉及一种离子照射系统，其目的是提供一种能够以高精度将一个或多个离子施加到目标点的离子照射系统和方法。 根据本发明的离子辐射系统包括：离子微探针; 偏转器，用于偏转由所述离子微探针产生的离子微束; 用于从由所述偏转器偏转的所述离子微束中提取单个或预定数量的离子的微缝; 用于保持要通过所述微狭缝提取的所述单个或预定数量离子照射的样品的样品保持器机构; 用于实时观察所述样品表面的扫描电子显微镜机构; 用于检测从所述样品的表面发射的二次电子的二次电子检测系统，所述二次电子检测系统包括二次电子倍增器; 以及用于控制施加到所述偏转器的电场的电场控制电路，所述电场控制电路由时钟发生器，连接到所述时钟发生器的计数器和连接到所述计数器的高压放大器组成，并且具有其 输出连接到所述偏转器; 其中所述计数器对来自所述二次电子倍增器的输出信号脉冲进行计数，并且在所述单个或预定数量的离子计数期间将时钟信号提供给所述电场控制电路的所述高压放大器，并停止将所述时钟信号提供给所述高电平 在完成所述单个或预定数量的离子的计数之后，所述离子微束被所述偏转器斩波一次或多次，相对于所述微缝隙瞬时地反向其方向或偏转，从而提取所述单个或预定数量的 离子通过所述微缝隙。

公开(公告)号：US4472636A

公开(公告)日：1984-09-18

申请号：US202046

申请日：1980-10-30

Applicant: Eberhard Hahn

Inventor： Eberhard Hahn

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/31777

Abstract: The invention relates to a method of and device for producing any desired patterns on a target. The irradiating beam is modulated over the entire cross-sectional area by an electro-magnetic field, which is obtained by a line or two-dimensionally shaped electrode grid, each individual electrode of which can be differently charged and which reflects the irradiation beam or produces a respective strip.

Abstract translation: 本发明涉及一种用于在目标上产生任何所需图案的方法和装置。 照射光束通过电磁场在整个横截面积上进行调制，该电磁场通过线或二维形状的电极栅格获得，每个电极栅格的每个单独电极可以被不同地充电并且反射照射束或产生 相应的条。