公开(公告)号：KR1020050023678A

公开(公告)日：2005-03-10

申请号：KR1020030061028

申请日：2003-09-02

Applicant: 한국과학기술연구원

Inventor： 변영태 ,  우덕하 ,  김선호 ,  정병민 ,  김부균

IPC: G02F1/313

CPC classification number: G02F1/3132 ,  G02B6/12004 ,  G02B6/12007 ,  G02F2001/3135

Abstract: PURPOSE: An ultra-short polarization-independent vertical directional coupler switch is provided to accurately control the thickness between two waveguide core layers to a submicron level by forming an inner cladding layer between two waveguide core layers using epitaxial growth, thereby shortening a light coupling length and operating the switch regardless of light polarization condition. CONSTITUTION: An ultra-short polarization-independent vertical directional coupler switch comprises the first waveguide part(10), the second waveguide part(20), and an inner cladding layer(30) between the first waveguide part and the second waveguide part. At least one of the first and the second waveguide parts is formed on a predetermined substrate(40). The first waveguide part and the second waveguide part are arranged in a vertical direction over the substrate. The first waveguide part has the first core layer(12) and the first outer cladding layer(14). The second waveguide part has the second core layer(22) and the second outer cladding layer(24).

Abstract translation: 目的：提供一种超短路偏振独立垂直方向耦合器开关，通过使用外延生长在两个波导芯层之间形成内包层，从而将两个波导芯层之间的厚度精确控制到亚微米级，从而缩短光耦合长度 并且无论光偏振条件如何，操作开关。 构成：超短路偏振无关垂直方向耦合器开关包括第一波导部分（10），第二波导部分（20）和第一波导部分与第二波导部分之间的内包层（30）。 第一和第二波导部分中的至少一个形成在预定基板（40）上。 第一波导部分和第二波导部分沿着衬底上的垂直方向布置。 第一波导部分具有第一芯层（12）和第一外包层（14）。 第二波导部分具有第二芯层（22）和第二外包层（24）。

公开(公告)号：KR1020040036805A

公开(公告)日：2004-05-03

申请号：KR1020020065155

申请日：2002-10-24

Applicant: 한국과학기술연구원

Inventor： 김영일 ,  윤태훈 ,  이석 ,  우덕하 ,  김선호 ,  김재헌 ,  변영태 ,  전영민 ,  박민철

IPC: G02F3/00

CPC classification number: G02F3/00 ,  G02F2/004

Abstract: PURPOSE: A method for realizing a wavelength variable all-optic NOR logic element is provided to apply a forward bias current to an EAM(Electro-Absorption Modulator) area of an EMILD(Electro-absorption Modulation Integrated Laser Diode) element, and to induce gain saturation, thereby realizing an all-optic NOR logic element. CONSTITUTION: An EMILD element(10) receives an RF signal from an EAM area(11), modulates a CW optical signal generated from a DFB-LD area(12), and makes a necessary signal. An electrical isolation area(15) is disposed between the EAM area(11) and the DFB-LD area(12) in 20 micrometers. An AR(Anti Reflection) coating portion(13) is formed by AR-coating a front side, and an HR(High Reflection) coating portion(14) is formed by HR-coating a rear side, such that light is incident or emitted on the front side only.

Abstract translation: 目的：提供一种实现波长可变全光NOR逻辑元件的方法，用于向EMILD（电吸收式调制集成激光二极管）元件的EAM（电吸收调制器）区域施加正向偏置电流，并诱导 增益饱和，从而实现全光NOR逻辑元件。 构成：EMILD元件（10）从EAM区域（11）接收RF信号，调制从DFB-LD区域（12）产生的CW光信号，并且产生必要的信号。 电隔离区域（15）以20微米的形式设置在EAM区域（11）和DFB-LD区域（12）之间。 通过AR正面涂覆AR（防反射）涂布部分（13），HR（高反射）涂层部分（HR）通过HR涂覆后侧形成，使得光线入射或发射 只在前方

公开(公告)号：KR100425374B1

公开(公告)日：2004-03-30

申请号：KR1020010070655

申请日：2001-11-14

Applicant: 한국과학기술연구원

Inventor： 김재헌 ,  변영태 ,  전영민 ,  이석 ,  우덕하 ,  김선호

IPC: G06F7/48

CPC classification number: H01S5/50 ,  G02F3/00 ,  H01S3/06754 ,  H01S5/509

Abstract: The present invention relates to an implementation method of all-optical half adder by using semiconductor optical amplifier(SOA)-based devices and the apparatus thereof. In more detail, it relates to an implementation method of all-optical half adder comprising an all-optical XOR gate and an all-optical AND gate, implemented by using SOA-based devices, and an apparatus thereof.

Abstract translation: 本发明涉及一种利用基于半导体光放大器（SOA）的器件的全光半加器的实现方法及其装置。 更详细地说，本发明涉及一种全光学半加器的实现方法及其装置，该全光半加器包括全光学异或门和全光学与门。

公开(公告)号：KR1020030028675A

公开(公告)日：2003-04-10

申请号：KR1020010059368

申请日：2001-09-25

Applicant: 한국과학기술연구원

Inventor： 김재헌 ,  변영태 ,  전영민 ,  이석 ,  우덕하 ,  김선호 ,  강광남

IPC: G02F3/00

Abstract: PURPOSE: An apparatus for realizing an electric light NAND logic element using a semiconductor optical amplifier is provided to be easily combined with other single logic elements for controlling all optical system with only optical signals. CONSTITUTION: A pulse generator(100) generates light pulses. A DFB-LD(Distributed Feedback Laser Diode)(102) has input continuous laser light signals. A first optical divider(104) divides output light of the DFB-LD. An optical modulator(106) modulates the output light from the first optical divider. An optical delay(112) obtains quarter time delay of the output light. An attenuator(108) controls the strength of the output light. A MUX(110) multiplexes the output light of the attenuator. An EDFA(Erbium-Doped Fiber Amplifier)(116) adds the output light of the MUX and the attenuator for amplifying to a pump signal. A tunable laser diode(120) has continuous wave irradiation signals. A second optical divider(122) divides the output light of the tunable laser diode at a ratio of 50 to 50. A semiconductor optical amplifier(124) amplifies the pump signal and the continuous wave irradiation signals for gain-saturating and wavelength-converting the signals. An optical filter(126) filters tunable output light of the semiconductor optical amplifier. An optical signal analyzer(128) detects and analyzes the tunable output light of the optical filter.

Abstract translation: 目的：提供一种用于实现使用半导体光放大器的电灯NAND逻辑元件的装置，以便容易地与用于仅用光信号控制所有光学系统的其它单个逻辑元件组合。 构成：脉冲发生器（100）产生光脉冲。 DFB-LD（分布式反馈激光二极管）（102）具有输入的连续激光信号。 第一分光器（104）分割DFB-LD的输出光。 光调制器（106）调制来自第一分光器的输出光。 光延迟（112）获得输出光的四分之一时间延迟。 衰减器（108）控制输出光的强度。 MUX（110）复用衰减器的输出光。 EDFA（掺铒光纤放大器）（116）将MUX的输出光和用于放大的衰减器相加到泵浦信号。 可调激光二极管（120）具有连续波照射信号。 第二分光器（122）以50至50的比例对可调谐激光二极管的输出光进行分压。半导体光放大器（124）放大泵浦信号和连续波照射信号以进行增益饱和和波长转换 信号。 滤光器（126）对半导体光放大器的可调输出光进行滤光。 光信号分析器（128）检测并分析滤光器的可调输出光。

公开(公告)号：KR100368791B1

公开(公告)日：2003-01-24

申请号：KR1020000005619

申请日：2000-02-07

Applicant: 한국과학기술연구원

Inventor： 최원준 ,  김선호 ,  우덕하 ,  이석 ,  한일기 ,  김회종 ,  강광남 ,  이희택

IPC: H01L31/12

Abstract: PURPOSE: A method for controlling a band gap of a semiconductor optical device having the structure of a quantum well is provided to prevent a quantum well substrate damaging by using a silicon nitride film as a dielectric cover layer and by controlling a flow ratio of ammonia gas. CONSTITUTION: A substrate having the structure of a quantum well is grown(S100). A dielectric cover layer is deposited on the substrate by a plasma chemical vapor deposition process(S200). A thermal processing is performed on the dielectric cover layer at a predetermined time(S300). The dielectric cover layer is removed(S400). A fluorescence spectrum is measured(S500).

Abstract translation: 目的：提供一种用于控制具有量子阱结构的半导体光学器件的带隙的方法，以通过使用氮化硅膜作为电介质覆盖层并通过控制氨气的流量比来防止量子阱衬底损坏 。 构成：生长具有量子阱结构的衬底（S100）。 通过等离子体化学气相沉积工艺在衬底上沉积电介质覆盖层（S200）。 在预定时间对电介质覆盖层进行热处理（S300）。 介电覆盖层被移除（S400）。 测量荧光光谱（S500）。

公开(公告)号：KR100361036B1

公开(公告)日：2002-11-18

申请号：KR1020000005618

申请日：2000-02-07

Applicant: 한국과학기술연구원

Inventor： 변영태 ,  이석 ,  우덕하 ,  이재하 ,  김선호 ,  한일기 ,  김회종 ,  최원준 ,  김재헌

IPC: H01L21/00

Abstract: 본 발명은 얇은 반도체 시료가 깨지지 않도록 마운팅(mounting) 기술을 이용하여 반도체 광소자의 전,후 단면에 무반사 코딩을 하도록 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치에 관한 것이다.
따라서, 본 발명은 무반사 코팅시 시료 깨짐을 방지하기 위한 마운팅 기술을 이용하는 시료 홀더 장치에 있어서, 제 1스테인레스(10) 상에는 스페이서(20)와, 고정판(30)과, 제 2스테인레스(40)가 순차적으로 적층되되, 각 홀(50a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 제 1스테인레스(10)까지 도달되도록 홀더결합수단(50)에 의해 체결되고, 각 홀(55a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 고정판(30)까지 도달되도록 시료고정수단(55)에 의해 체결되며, 상기 고정판(30)과 상기 제 1스테인레스(10) 사이에 놓여지는 위치에 스페이서(20)와 수평으로 레이저바(60)가 연장되어 설치되도록 구성되어, 상기 제 2스테인레스(40)의 면적 크기를 상기 제 1스테인레스(10)의 면적 크기 보다 작게 설계함으로서 무반사 코팅시 레이저바(60)에 가해지는 힘의 세기� � 분산시키도록 하는 것을 특징으로 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치가 제시된다.

公开(公告)号：KR1020020084524A

公开(公告)日：2002-11-09

申请号：KR1020010023860

申请日：2001-05-02

Applicant: 한국과학기술연구원

Inventor： 김성일 ,  김춘근 ,  김용태 ,  김선호

IPC: B64C11/20

CPC classification number: Y02T50/44

Abstract: PURPOSE: A subminiature helicopter is provided to promote the manufacturing by making the structure and shape simplified and to precisely measure aeromechanic characteristic value of a subminiature helicopter. CONSTITUTION: A subminiature helicopter comprises a pair of blades(2) having sections of an airfoil shape, a rotor device(4) for giving driving force for rotation of the blades, a guide device, and a power source supply unit(10) for applying power source to the rotor device. The guide device prevents rotation of the rotor device and makes rectilinear movement of the rotor device possible together when the rotor device moves up and down by rotation of the blades. The guide device comprises a guide bracket(6) and a guide rod(8). The guide bracket is installed on the outer surface of the rotor device for rectilinear movement of the rotor device. The guide rod is installed vertically to guide the guide bracket up and down. The guide bracket comprises a pair of guide connection units extended from the rotor device and guide pipes installed to the upper and lower side of both ends of the guide connection units to reduce the weight of the helicopter.

Abstract translation: 目的：提供超小型直升机，通过使结构和形状简化，精确测量超小型直升机的机械特性值来促进制造。 构成：超小型直升机包括具有翼型形状的一对叶片（2），用于产生用于叶片旋转的驱动力的转子装置（4），导向装置和电源装置（10），用于 将电源施加到转子装置。 引导装置防止转子装置的旋转，并且当转子装置通过叶片的旋转而上下移动时，使转子装置的直线运动成为可能。 导向装置包括导向支架（6）和导杆（8）。 导向支架安装在转子装置的外表面上，用于转子装置的直线运动。 引导杆垂直安装，上下引导引导支架。 引导支架包括从转子装置延伸的一对引导连接单元和安装到引导连接单元两端的上侧和下侧的引导管，以减小直升机的重量。

公开(公告)号：KR1020020069729A

公开(公告)日：2002-09-05

申请号：KR1020010010094

申请日：2001-02-27

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: H01S3/136

Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.

Abstract translation: 目的：提供水平耦合型激光二极管，通过使用具有不同传播常数的两个有源元件来加宽可变波长范围。 构成：通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成水平耦合型激光二极管。 光放大器（200）具有与激光二极管（100）不同的传播常数。 为了向激光二极管（100）和光放大器（200）施加电流，第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部和下端部分 ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。

公开(公告)号：KR1020020060523A

公开(公告)日：2002-07-18

申请号：KR1020010001650

申请日：2001-01-11

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: G02B6/293

Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.

Abstract translation: 目的：提供一种通过使用半导体激光器的水平耦合和半导体光放大器来实现电光波长转换器的方法，以确保宽范围的输入功率，因为​​该方法不需要常规的马赫 - 泽德干涉仪结构，因此 利用诸如可变波长激光二极管的常规半导体激光器的特性。 构成：通过使用半导体激光器的水平耦合和半导体光学放大器来实现电光波长转换器的方法包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） （100a，100b）进行防反射，分割第一和第二波导管（100,200），分别得到分割的反射面和分割的防反射面。 在其上设置有在该方法中使用的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构成多量子阱结构。

公开(公告)号：KR1020010077675A

公开(公告)日：2001-08-20

申请号：KR1020000005631

申请日：2000-02-07

Applicant: 한국과학기술연구원

Inventor： 우덕하 ,  이석 ,  한일기 ,  김선호 ,  최원준 ,  변영태 ,  김회종 ,  김재헌 ,  강광남 ,  김대식 ,  양지상

IPC: H01L31/14

Abstract: PURPOSE: A method for extending the gain bandwidth of a semiconductor optical amplifier is provided to obtain the semiconductor optical amplifier having a wide gain bandwidth by using a quantum dot as a gain region of the semiconductor optical amplifier. CONSTITUTION: An InP(Indium Phosphorus) buffer layer is grown at a predetermined thickness(S10). After the growing of the InP buffer layer, a predetermined gas is supplied(S20, S30, S40). An InAs(Indium arsenide) single well layer is grown on the InP buffer layer(S50). After the growing of the InAs layer, a predetermined gas is supplied(S60, S70, S80). An InP cap layer is grown on the InAs layer(S90).

Abstract translation: 目的：提供一种用于扩展半导体光放大器的增益带宽的方法，通过使用量子点作为半导体光放大器的增益区，获得具有宽增益带宽的半导体光放大器。 构成：以预定厚度生长InP（铟磷）缓冲层（S10）。 在InP缓冲层生长之后，提供预定的气体（S20，S30，S40）。 在InP缓冲层上生长InAs（砷化铟）单阱层（S50）。 在InAs层生长之后，提供预定的气体（S60，S70，S80）。 InAs层在InAs层上生长（S90）。