Abstract:
Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.
Abstract:
Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.
Abstract:
One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.
Abstract:
Field emission nanostructures assist operation of a microdischarge device. The field emission nanostructures are integrated into the microdischarge device(s) or are situated near an electrode of the microdischarge device(s). The field emission nanostructures reduce operating and ignition voltages compared to otherwise identical devices lacking the field emission nanostructures, while also increasing the radiative output of the microdischarge device(s).
Abstract:
The invention pertains to electron exposure equipment useful for exposing, treating and processing coatings and other materials by a cold cathode gas discharge electron source having a broad uniform emitting area. The apparatus has a vacuum chamber; a large surface area cathode in the vacuum chamber and means for applying a negative voltage to the cathode and causing the cathode to issue electrons toward a target in the vacuum chamber. An anode is positioned between the cathode and the target. The anode is formed of an electrically conductive grid having an array of apertures therethrough extending from a center of the grid to an edge of the grid. In one embodiment the apertures have a progressively increasing area from the center of the grid to the edge of the grid. In another embodiment the anode has a progressively decreasing thickness from the center of the grid to the edge of the grid. In yet another embodiment the anode has both progressively increasing area from the center of the grid to the edge of the grid and a progressively decreasing thickness from the center of the grid to the edge of the grid. A voltage is applied to the anode which is positive relative to the voltage applied to the cathode.
Abstract:
An ion plasma electron gun for the generation of large area electron beams with uniform electron distribution. Positive ions generated by a wire in a plasma discharge chamber are accelerated through an extraction grid into a second chamber containing a high voltage cold cathode. These positive ions bombard a surface of the cathode causing the cathode to emit secondary electrons which form an electron beam. After passing through the extraction grid and the plasma discharge chamber, the electron beam exits from the gun by way of a second grid and a foil window supported on the second grid. The gun is constructed so that the electron beam passing through the foil window has a relatively large area and a uniform electron distribution which is substantially the same as the ion distribution of the ion beam impinging upon the cathode. Control of the generated electron beam is achieved by applying a control voltage between the wire and the grounded housing of the plasma chamber to control the density of positive ions bombarding the cathode.
Abstract:
A broad-beam electron source has a chamber into which is introduced an ionizing gas. Electrons are emitted between a cathode and an anode assembly to ionize that gas. The electrons within the plasma are drawn outwardly from the chamber through an apertured wall, which constitutes a screen, and thereafter are accelerated toward a target in a well-directed beam. A comparatively copious supply of electrons is developed, while yet requiring only low voltages in connection with its generation and resulting in correspondingly low electron energies. Ions produced external to the electron source itself are utilized to assist in neutralizing the charge density of the electron beam in order to help maintain its definition. For insulative targets, secondarily emitted electrons permit conservation of surface charge.
Abstract:
A broad beam DC cold cathode electron gun with a plurality of plasma emitters formed by a capacitively coupled sliding spark assembly operable as a steady state as well as a pulsed device. Stabilization of the plasma emission current is attained through a feedback loop between the spark assembly and the grid bias supply.