公开(公告)号：KR1020070073728A

公开(公告)日：2007-07-10

申请号：KR1020070065376

申请日：2007-06-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 아사노다카노부 ,  이시이가쓰토시 ,  야마모토히로유키 ,  호시조지 ,  미우라가즈토시

IPC: H01L21/324 ,  H01L21/00 ,  C23C16/30

CPC classification number: C23C16/45561 ,  C23C16/401 ,  C23C16/452 ,  C23C16/4557 ,  C30B33/005 ,  H01L21/67109

Abstract: A heat treatment system and a method thereof are provided to obtain an uniform thickness of a layer and to lower heat temperature by supplying a preheated process gas to a reaction vessel. A heat treatment system includes a heating unit installed at a gas introduction path in order to heat a process gas before supplying the process gas to a reaction vessel, and a hole formed at the gas introduction path between the heating unit and the reaction vessel. The pressure of the heating unit is higher than the internal pressure of the reaction vessel since the pressure loss is caused in the hole. The process gas is supplied through the gas introduction path to the heating unit. The process gas is preheated at the predetermined temperature. The preheated process gas is supplied to the reaction vessel.

Abstract translation: 提供热处理系统及其方法以通过向反应容器提供预热的工艺气体来获得均匀的层厚度并降低加热温度。 热处理系统包括：加热单元，其安装在气体引入路径处，以便在将工艺气体供应到反应容器之前加热工艺气体，以及在加热单元和反应容器之间的气体引入路径处形成的孔。 由于在孔中产生压力损失，加热单元的压力高于反应容器的内部压力。 工艺气体通过气体导入路径供给到加热单元。 处理气体在预定温度下预热。 将预热的工艺气体供应到反应容器。

公开(公告)号：KR100720778B1

公开(公告)日：2007-05-23

申请号：KR1020060104505

申请日：2006-10-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카하시유타카 ,  가토히토시 ,  구마가이다케시 ,  이시이가쓰토시 ,  미우라가즈토시 ,  도하라아쓰시 ,  후지타요시유키

IPC: H01L21/205

CPC classification number: H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

Abstract: 본 발명은, 피처리체가 수용된 반응실을 소정의 온도로 가열하는 반응실가열공정과, 일산화이질소로 이루어지는 처리가스를, 산질화막의 형성이 가능한 반응온도 이상으로 가열하는 가스가열공정과, 상기 가열된 반응실 내부로 상기 가열된 처리가스를 공급하여 상기 피처리체에 산질화막을 형성하는 성막공정을 구비한다. 상기 반응실가열공정에 있어서, 상기 반응실의 가열온도는, 상기 처리가스의 반응온도보다 낮게 설정되어 있다.

公开(公告)号：KR1020060113880A

公开(公告)日：2006-11-03

申请号：KR1020060104509

申请日：2006-10-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카하시유타카 ,  가토히토시 ,  구마가이다케시 ,  이시이가쓰토시 ,  미우라가즈토시 ,  도하라아쓰시 ,  후지타요시유키

IPC: H01L21/205

CPC classification number: H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

Abstract: A method and an apparatus for forming a silicon oxide film are provided to increase uniformity of a film thickness of an oxide film by performing a dry oxidation process on an object to be treated. An apparatus for forming a silicon oxide film includes a reaction chamber(302), a reaction chamber heater(312), a reaction chamber pressure adjuster, a first supply unit(313), a second supply unit(314), a gas heater(315), and a controller(321). The reaction chamber receives an object to be treated. The reaction chamber heater heats the reaction chamber up to a predetermined temperature. The reaction chamber pressure adjuster adjusts a pressure of the reaction chamber to a predetermined value. The first supply unit supplies silane-based gas into the reaction chamber. The second supply unit supplies N2O into the reaction chamber. The gas heater is arranged on the second supply unit and heats up the N2O up to a predetermined temperature. The controller heats up the N2O inside the reaction chamber to a temperature of 700‹C.

Abstract translation: 提供一种用于形成氧化硅膜的方法和装置，以通过对被处理物进行干式氧化处理来提高氧化膜的膜厚均匀性。 用于形成氧化硅膜的装置包括反应室（302），反应室加热器（312），反应室压力调节器，第一供应单元（313），第二供应单元（314），气体加热器 315）和控制器（321）。 反应室接收待处理物体。 反应室加热器将反应室加热至预定温度。 反应室压力调节器将反应室的压力调节到预定值。 第一供应单元将硅烷基气体供应到反应室中。 第二供应单元向反应室供应N2O。 气体加热器布置在第二供应单元上，并将N2O加热至预定温度。 控制器将反应室内的N2O加热至700℃的温度。

公开(公告)号：KR1020060113879A

公开(公告)日：2006-11-03

申请号：KR1020060104505

申请日：2006-10-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카하시유타카 ,  가토히토시 ,  구마가이다케시 ,  이시이가쓰토시 ,  미우라가즈토시 ,  도하라아쓰시 ,  후지타요시유키

IPC: H01L21/205

CPC classification number: H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

Abstract: A method and an apparatus for forming a silicon nitride film are provided to increase uniformity of a film thickness of an oxide film by forming the silicon nitride film at a low temperature. An apparatus of forming a silicon nitride film includes a reaction chamber(202), a reaction chamber heater(212), a reaction chamber pressure adjuster, a first supply unit(213), a second supply unit(214), a gas heater(215), and a controller(221). The reaction chamber receives an object to be treated. The reaction chamber heater heats the reaction chamber up to a predetermined temperature. The reaction chamber pressure adjuster adjusts a pressure of the reaction chamber to a predetermined value. The first supply unit supplies silane-based gas into the reaction chamber. The second supply unit supplies trimethylamine into the reaction chamber. The gas heater is arranged on the second supply unit and heats up the trimethylamine up to a predetermined temperature. The controller heats up the trimethylamine inside the reaction chamber to a temperature for generating nitrogen.

Abstract translation: 提供了一种用于形成氮化硅膜的方法和装置，以通过在低温下形成氮化硅膜来提高氧化膜的膜厚度的均匀性。 形成氮化硅膜的装置包括反应室（202），反应室加热器（212），反应室压力调节器，第一供应单元（213），第二供应单元（214），气体加热器 215）和控制器（221）。 反应室接收待处理物体。 反应室加热器将反应室加热至预定温度。 反应室压力调节器将反应室的压力调节到预定值。 第一供应单元将硅烷基气体供应到反应室中。 第二供应单元向反应室供应三甲胺。 气体加热器布置在第二供应单元上，并将三甲胺加热至预定温度。 控制器将反应室内的三甲胺加热至产生氮气的温度。

公开(公告)号：KR1020060113878A

公开(公告)日：2006-11-03

申请号：KR1020060104499

申请日：2006-10-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카하시유타카 ,  가토히토시 ,  구마가이다케시 ,  이시이가쓰토시 ,  미우라가즈토시 ,  도하라아쓰시 ,  후지타요시유키

IPC: H01L21/205

CPC classification number: H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

Abstract: A method and an apparatus of forming a silicon oxide film are provided to increase a film forming speed by reducing a thickness of a nitride film and forming the nitride film at a low temperature. An apparatus for forming a silicon oxide film includes a reaction chamber(131), a reaction chamber heater(132), a supply unit(105), and a gas heater(102). The reaction chamber receives an object to be treated. A silicon layer is formed at least on a surface of the object to be treated. The reaction chamber heater raises a temperature of the reaction chamber to a predetermined temperature. The supply unit supplies gas, which is made of hydrogen and chlorine, and process gas, which contains oxygen, into the reaction chamber. The gas heater is arranged on the supply unit and heats up the process gas before the process gas is supplied into the reaction chamber, to generate humidity.

Abstract translation: 提供一种形成氧化硅膜的方法和装置，以通过减小氮化物膜的厚度并在低温下形成氮化物膜来提高成膜速度。 用于形成氧化硅膜的装置包括反应室（131），反应室加热器（132），供应单元（105）和气体加热器（102）。 反应室接收待处理物体。 至少在待处理物体的表面上形成硅层。 反应室加热器将反应室的温度升高到预定温度。 供应单元将由氢和氯制成的气体以及含氧的处理气体供入反应室。 气体加热器布置在供应单元上，并且在将工艺气体供应到反应室中之前加热处理气体，以产生湿度。

公开(公告)号：KR100268526B1

公开(公告)日：2000-11-01

申请号：KR1019940006976

申请日：1994-04-02

Applicant: 도쿄엘렉트론가부시키가이샤 ,  도오교오에레구토론도오호쿠가부시끼가이샤

Inventor： 마쓰오다케노부 ,  와카바야시쓰요시 ,  모리야슈지 ,  미우라가즈토시 ,  모리다카히로

IPC: H01L21/30

Abstract: 종형 열처리장치는 반도체 웨이퍼에 가스를 사용하는 열처리를 하는 열처리부와, 이 열처리부에 가스를 공급하는 가스공급부를 구비하고 있다. 가스공급부는 복수의 가스 유량제어장치를 포함하는 복수의 가스제어기기와, 이들 가스 제어기기를 수납하는 가스제어기기 수납용이와, 이 수납용기 바깥에 설치되고 가스 제어기기에 부속하는 복수의 전기부품과, 복수의 전기부품을 수납하는 전기부품용기를 가지고 있고, 복수의 가스유량제어장치는 블록 이음매에 의하여 일체화되어 있다.