公开(公告)号：KR1020060097066A

公开(公告)日：2006-09-13

申请号：KR1020067015538

申请日：2002-08-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오쿠보가즈야 ,  다치바나미츠히로 ,  팡청 ,  스즈키겐지 ,  사토고이치 ,  이시즈카호타카

IPC: C23C16/08

CPC classification number: C23C16/45523 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76877

Abstract: A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuumizing-enabled treating vessel (22), a reduction gas supplying process (70) and a tungsten gas supplying process (72) for supplying a tungsten-containing gas are alternately repeated with a purge process (74), for supplying an inert gas while vacuumizing, intervened therebetween to thereby form an initial tungsten film (76). Therefore, an initial tungsten film can be formed as a nucleation layer high in film thickness uniformity; and, accordingly, when main tungsten films are subsequently deposited, it is possible to restrict voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and provide good burying characteristics.

Abstract translation: 形成钨膜的方法，其能够限制空洞和火山，尽管埋孔的直径小，但具有很大的不利影响特性，并且具有良好的埋藏特性。 在真空化处理容器（22）的处理对象（W）的表面形成钨膜时，还原气体供给工序（70）和供给钨的钨气体供给工序（72） 在吹扫过程（74）中交替重复气体，用于在抽真空时供给惰性气体，从而形成初始钨膜（76）。 因此，可以形成初始钨膜作为膜厚均匀性高的成核层; 因此，随后沉积主钨膜时，尽管埋孔的直径很小，但可以限制大小不利地影响特性的空隙和火山，并提供良好的埋藏特性。

公开(公告)号：KR100436823B1

公开(公告)日：2004-06-23

申请号：KR1019990036480

申请日：1999-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오쿠보가즈야 ,  다카하시츠요시 ,  아오키기미야 ,  마츠세기미히로

IPC: H01L21/24

CPC classification number: C23C16/42 ,  H01L21/28518

Abstract: A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume "in terms of a phosphine gas".

Abstract translation: 通过使用添加有含磷原子的气体的工艺气体在物体上形成硅相对富含的第一硅化钨层，并且在第一钨硅化物层上形成钨较浓的第二钨硅化物层，使得 形成硅化钨膜。 含有磷原子的气体在处理气体中的添加量以“按照磷化氢气体计”为0.02〜0.2体积％。

公开(公告)号：KR1020020079783A

公开(公告)日：2002-10-19

申请号：KR1020027009180

申请日：2001-11-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마사키히데아키 ,  다치바나미츠히로 ,  오쿠보가즈야 ,  스즈키겐지 ,  가와노유미코

IPC: H01L21/285

Abstract: 본 발명의 금속 막 형성 방법은 ① 다양한 종류의 성분 가스를 기부 배리어 막(3)으로 순차로 공급하는 단계(S13, S15)로서, 상기 가스중 적어도 하나는 금속을 포함하는, 상기 공급 단계(S13, S15)와, ② 상기 단계 ①의 성분 가스를 진공 배기시키거나, 상기 단계 ①의 성분 가스가 각각 공급된 후에 상기 단계 ①의 성분 가스를 다른 종류의 가스로 대체시키는 단계(S14, S16)를 포함하며, 이에 의해 상기 금속의 극히 얇은 막(5)이 상기 기부 배리어 막(3)상에 형성된다.

公开(公告)号：KR1020010070488A

公开(公告)日：2001-07-25

申请号：KR1020010001288

申请日：2001-01-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마쓰도마사히코 ,  스즈키겐지 ,  오쿠보가즈야

IPC: H01L21/28

CPC classification number: H01L29/4941 ,  H01L21/28061 ,  H01L21/32053 ,  H01L29/4933 ,  Y10S257/90

Abstract: PURPOSE: To solve a problem that a void V is formed inside an electrode or a wiring of polyside structure in a formation stage in which the electrode and the wiring are formed, and with a reduction in size and resistance of an electrode and a wiring, the adverse effect of the void V gets actualized to deteriorate the manufacture of the electrode and wiring in yield. CONSTITUTION: A tungsten silicide film is formed through such a manner that when a tungsten silicide layer is formed on a polysilicon layer, phosphorus atom-containing gas is added to reactive gas in an initial stage in which the tungsten silicide layer is formed, and the amount of phosphorus atom-containing gas added to the reactive gas is set at 0.2 to 0.45 vol.%.

Abstract translation: 目的：为了解决在形成电极和布线的形成阶段中的电极或多边形结构的布线内形成空穴V并且电极和布线的尺寸和电阻降低的问题， 实现空隙V的不利影响，使电极和布线的制造成品率下降。 构成：通过以下方式形成硅化钨膜：当在多晶硅层上形成硅化钨层时，在形成硅化钨层的初始阶段将含磷原子的气体加入到反应性气体中， 添加到反应气体中的含磷原子气体的量设定为0.2〜0.45体积％。

公开(公告)号：KR1020000022806A

公开(公告)日：2000-04-25

申请号：KR1019990036480

申请日：1999-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오쿠보가즈야 ,  다카하시츠요시 ,  아오키기미야 ,  마츠세기미히로

IPC: H01L21/24

CPC classification number: C23C16/42 ,  H01L21/28518

Abstract: PURPOSE: A methode for forming a tungsten silicide film is provided to arrange a decis ion direction of a tungsten silicide by adding a phosphorous atom-containing gas to a process gas. CONSTITUTION: A methode for forming a tungsten silicide film comprises the steps of: forming a first tungsten silicide layer(5) on an object by using a process gas adding a phosphorus atom-containing gas; and forming a second tungsten silicide layer(6) on the first tungsten silicide layer. The first tungsten silicide layer is formed by using the phosphorous atom-containing gas. The second tungsten silicide layer is formed by not using the phosphorous atom-containing gas, or a little amount of phosphorous atom-containing gas.

Abstract translation: 目的：提供一种形成硅化钨膜的方法，通过向处理气体中加入含磷原子的气体来布置硅化钨的决定方向。 构成：形成硅化钨膜的方法包括以下步骤：通过使用加入含磷原子的气体的工艺气体在物体上形成第一硅化钨层（5）; 以及在所述第一硅化钨层上形成第二硅化钨层（6）。 通过使用含磷原子的气体形成第一硅化钨层。 通过不使用含磷原子的气体或少量含磷原子的气体形成第二硅化钨层。