公开(公告)号：KR1020030010822A

公开(公告)日：2003-02-06

申请号：KR1020010045398

申请日：2001-07-27

Applicant: 삼성전자주식회사

Inventor： 류재준 ,  김경대 ,  길준잉 ,  허용우

IPC: H01L21/304

CPC classification number: H01L22/26

Abstract: PURPOSE: An apparatus for measuring total organic carbon(TOC) in a semiconductor fabricating process is provided to monitor and control the level changing in unit process equipment by abstracting a sample of chemical liquid from a process bath, and to improve analyzing reliability and minimize a damage of an analyzer by previously removing the air bubbles flowing in the analyzer together with the sample of chemical liquid. CONSTITUTION: A predetermined process of reacting with a layer formed on a wafer is performed in a process bath(110) included in process equipment. One of at least one kind of fluid for performing the process is abstracted as a sample from the process bath and supplied by an abstracting unit. The analyzer(140) analyzes the density of TOC included in the sample supplied from the abstracting unit.

Abstract translation: 目的：提供半导体制造工艺中的总有机碳（TOC）测量装置，通过从处理液中提取化学液样品来监控和控制单元工艺设备的水平变化，提高分析的可靠性和最小化 通过预先除去在分析器中流动的气泡与化学液体的样品一起损坏分析仪。 构成：与在晶片上形成的层反应的预定过程在包括在工艺设备中的处理槽（110）中进行。 用于执行该过程的至少一种流体中的一种作为来自处理槽的样品被抽象并由抽象单元提供。 分析器（140）分析从抽象单元提供的样本中包含的TOC的浓度。

公开(公告)号：KR1020020037556A

公开(公告)日：2002-05-22

申请号：KR1020000067519

申请日：2000-11-14

Applicant: 삼성전자주식회사

Inventor： 김국광 ,  이광명 ,  성순환 ,  김경대

IPC: H01L21/02

Abstract: PURPOSE: An exhaust line of equipment for fabricating a semiconductor is provided to prevent an exhaust material from being attached to the inner wall of the exhaust line, by forming an exhaust line part composed of the first and second lines and by injecting inert gas into the exhaust line part. CONSTITUTION: The first line(36) is connected to a chamber(32) of the equipment(30) for fabricating the semiconductor. The second line(38) has a structure in which the outside is connected to the inside. The exhaust line part(40) is composed of the first and second lines. A switching valve(42) switches on/off the semiconductor fabricating equipment and the exhaust line part, connected to the exhaust line part. A pump(46) pumps the exhaust material, connected to the exhaust line part. A gas supply unit(44) supplies inert gas to the inside of the first line so that the inert gas is supplied to the exhaust line part.

Abstract translation: 目的：提供一种用于制造半导体的设备的排气管线，以通过形成由第一和第二管线组成的排气管线部分并且通过将惰性气体注入到排气管线中来防止排气材料附着到排气管的内壁 排气管路部分。 构成：第一线（36）连接到用于制造半导体的设备（30）的腔室（32）。 第二线（38）具有外部连接到内部的结构。 排气管路部分（40）由第一和第二管线构成。 开关阀（42）接通/关闭连接到排气管路部分的半导体制造设备和排气管路部分。 泵（46）泵送排气材料，连接到排气管路部分。 气体供给单元（44）向第一管线内部供给惰性气体，从而将惰性气体供给到排气管路部。

公开(公告)号：KR1020010010201A

公开(公告)日：2001-02-05

申请号：KR1019990028944

申请日：1999-07-16

Applicant: 삼성전자주식회사

Inventor： 홍형식 ,  이영출 ,  차훈 ,  김경대

IPC: H01L21/304

Abstract: PURPOSE: A wafer polishing device and a wafer polishing method are provided to simultaneously correct D/F value applied on each carrier of a multi-head part in CMP process, and corrects D/F value applied on each carrier of a multi-hear part by in-situ method. CONSTITUTION: A wafer polishing device includes a pad, a multi-head, cylinders, load-cells, and a display part. The pad polishes a wafer. The multi-head includes many carriers corresponding to one waver, and holds the wafer. The cylinders are arranged on the multi-head, applies a pressure on each carrier. The load-cells are arranged between the cylinder and the multi-head, and measure a pressure applied on a carrier from each cylinder. The display part changes a pressure value measured in each load cell to a current value, and displays each current signal at the same time. The wafer polishing device regulates a pressure value applied on a carrier from each cylinder, makes the current signals to be identical, and thus a vertical pressure about each carrier of the multi-head can be corrected.

Abstract translation: 目的：提供晶片抛光装置和晶片抛光方法，以在CMP工艺中同时校正施加在多头部件的每个载体上的D / F值，并且校正施加在多听筒部件的每个载体上的D / F值 通过原位法。 构成：晶片抛光装置包括焊盘，多头，气缸，负载电池和显示部件。 垫抛光晶片。 多头包括对应于一个摇摆的许多载体，并且保持晶片。 气缸布置在多头上，对每个载体施加压力。 负载单元布置在气缸和多头之间，并且测量从每个气缸施加在载体上的压力。 显示部将各测力传感器中测定的压力值变更为当前值，同时显示各电流信号。 晶片抛光装置调节从每个气缸施加在载体上的压力值，使得电流信号相同，从而可以校正围绕多头的每个载体的垂直压力。

公开(公告)号：KR2020000021278U

公开(公告)日：2000-12-26

申请号：KR2019990008968

申请日：1999-05-25

Applicant: 삼성전자주식회사

Inventor： 박정혁 ,  김경대 ,  김희덕 ,  이상열

IPC: H01L21/306

Abstract: 목적: 드라이에칭공정을행하는프로세싱챔버내에구비된상부전극의마모에따른교체작업을손쉽게할 수있는드라이에칭챔버의상부전극을제공한다. 구성: 드라이에칭을위한챔버설비의상부전극에있어서, 다수의가스분사홀이형성된내측상부전극과, 상기내측상부전극이중앙홀로삽입되는링 형상의몸체로이루어진외측상부전극으로구성되어, 상기내측상부전극만을별도로교체할수 있게한다. 상기의구성에서, 상기내측상부전극과외측상부전극은그 표면을애노다이징코팅처리하여구성하되, 상기내측상부전극과외측상부전극간의접촉부는도전가능한비코팅부로형성한다. 효과: 설비의보수작업및 부품교체시에내측상부전극만을해체하면되므로, 폴리머의축적및 마모등으로인한부품교체시에하나의몸체로된 상부전극전체를교체하던종래에비해, 작업자의노고가경감되며, 작업시간을단축하여설비가동시간을향상시켜생산성을증대시킬수 있고, 아울러설비의유지보수에필요한부품공급및 인력투입에소요되는비용을절감할수 있다.

公开(公告)号：KR100683114B1

公开(公告)日：2007-02-15

申请号：KR1020000067519

申请日：2000-11-14

Applicant: 삼성전자주식회사

Inventor： 김국광 ,  이광명 ,  성순환 ,  김경대

IPC: H01L21/02

Abstract: 내벽에 배기물이 침적하는 것을 방지하는 배기 라인이 개시되어 있다. 공정을 수행하기 위한 가스를 공급하는 제1가스 공급부가 구비된 챔버와, 상기 챔버와 연결되는 제1 라인과, 상기 제1 라인의 내부에 상기 제1 라인과 이격되도록 설치되고, 소정 부분에서 외부와 내부가 도통하는 구성을 갖는 제2 라인으로 이루어진 배기 라인부와, 상기 배기 라인부와 연결되고, 상기 제조 설비와 배기 라인부를 개폐하기 위한 절환 밸브와, 상기 배기 라인부와 연결되고, 상기 배기물을 펌핑하기 위한 펌프와, 상기 배기 라인부로 불활성 가스를 공급하기 위해, 상기 제1 라인의 내부로 불활성 가스가 공급되는 가스 공급부를 구비한다. 따라서 배기물이 상기 제2 라인으로 배기할 때 불활성 가스를 공급함으로서 배기물이 상기 제2 라인의 내벽에 부착하는 것을 방지한다.

公开(公告)号：KR100419924B1

公开(公告)日：2004-02-25

申请号：KR1020010023774

申请日：2001-05-02

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  김경대 ,  정회식 ,  전필권 ,  김영호

IPC: C11D7/10

CPC classification number: C11D7/06 ,  C11D7/10 ,  C11D7/264 ,  C11D7/32 ,  C11D7/5004 ,  C11D11/0047 ,  Y10S134/902

Abstract: A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.

Abstract translation: 一种用于固化的抗反射层（AFC层）组件的清洁溶液和一种使用清洁溶液清洁抗反射层组件的方法，其中所述清洁溶液包含约5-30重量％的氢氧化铵， 70重量％的有机溶剂和约10-50重量％的水。 当在晶片上实施涂覆工艺期间有机材料溅到相邻设备上时，设备被分离，然后浸入清洁溶液中。 此后，将设备冲洗并干燥。 有利地去除固化和未固化的有机材料。 将固化的有机材料放置一段时间，特别是有利地去除抗反射层组分。

公开(公告)号：KR1020020081923A

公开(公告)日：2002-10-30

申请号：KR1020010021473

申请日：2001-04-20

Applicant: 삼성전자주식회사

Inventor： 임광신 ,  김경대 ,  길준잉 ,  김한밀 ,  이보용 ,  송종국 ,  이영구

IPC: H01L21/304

Abstract: PURPOSE: A cleaning method of a semiconductor wafer is provided effectively and entirely to remove particles or contamination formed at a rear surface of the semiconductor wafer. CONSTITUTION: A photoresist layer is coated on a front surface of a semiconductor wafer(10). The rear surface of the semiconductor wafer is cleaned by cleaning solutions(20). Preferably, the cleaning solutions use mixed solutions composed of H3PO4, HF, H2O2 and de-ionized water. Then, the remained cleaning solutions are removed(30). The photoresist layer located on the front surface of the semiconductor wafer is then removed(40). A general cleaning is then carried out(50).

Abstract translation: 目的：有效且全面地提供半导体晶片的清洁方法，以去除形成在半导体晶片的后表面的颗粒或污染物。 构成：将光致抗蚀剂层涂覆在半导体晶片（10）的前表面上。 半导体晶片的后表面由清洁溶液（20）清洁。 优选地，清洗液使用由H 3 PO 4，HF，H 2 O 2和去离子水组成的混合溶液。 然后，清除残留的清洁溶液（30）。 然后去除位于半导体晶片的前表面上的光致抗蚀剂层（40）。 然后进行一般清洁（50）。

公开(公告)号：KR1020020074014A

公开(公告)日：2002-09-28

申请号：KR1020010014093

申请日：2001-03-19

Applicant: 삼성전자주식회사

Inventor： 우재영 ,  김경대 ,  김진성 ,  이영구

IPC: H01L21/66

CPC classification number: G02B21/26 ,  G02B21/0016

Abstract: PURPOSE: A microscope for testing a semiconductor wafer and a test method using the same are provided to test all sides of a wafer by transferring a sample plate to an X-axis, a Y-axis, and a Z-axis and tilting the sample plate as much as a predetermined angle. CONSTITUTION: An optic system(110) is used for magnifying a wafer(W) by using an object lens(111) and an eye lens(113). A display portion(120) is used for magnifying and projecting an image of the wafer(W) magnified by the optic system(110). The wafer(W) is loaded and fixed on a sample plate(130). A sample plate moving portion(200) is formed with an X, Y, and Z-axis transfer portion(210) and a tilting portion(230). The X, Y, and Z-axis transfer portion(210) is used for transferring the sample plate(130) toward an X-axis, a Y-axis, and a Z-axis. The tilting portion(230) is used for tilting the sample plate(130) to a predetermined angle. A rotation portion(180) is used for rotating the wafer(W) loaded on the sample plate(130) to a predetermined direction. A control portion(170) is used for controlling the sample plate moving portion(200) and the rotation portion(180).

Abstract translation: 目的：提供用于测试半导体晶片的显微镜和使用其的测试方法，以通过将样品板转移到X轴，Y轴和Z轴来测试晶片的所有侧面并倾斜样品 板材多达预定角度。 构成：光学系统（110）用于通过使用物镜（111）和眼睛透镜（113）放大晶片（W）。 显示部分（120）用于放大和投影由光学系统（110）放大的晶片（W）的图像。 将晶片（W）装载并固定在样品板（130）上。 样品板移动部分（200）由X，Y和Z轴转移部分（210）和倾斜部分（230）形成。 X，Y和Z轴传送部分（210）用于将样品板（130）朝向X轴，Y轴和Z轴传送。 倾斜部分（230）用于将样品板（130）倾斜到预定角度。 旋转部分（180）用于将装载在样品板（130）上的晶片（W）旋转到预定方向。 控制部（170）用于控制样品板移动部（200）和旋转部（180）。

公开(公告)号：KR1020020031569A

公开(公告)日：2002-05-02

申请号：KR1020000062121

申请日：2000-10-21

Applicant: 삼성전자주식회사

Inventor： 김국광 ,  김경대

IPC: H01L21/02

Abstract: PURPOSE: A plate cooling apparatus for fabricating a semiconductor is provided to minimize a change of thermal distribution by maintaining constantly a pressure of a coolant passing branched cooling lines. CONSTITUTION: A storage portion(40) is used for storing a coolant. A cooling line(44) is used for cooling a plate(43). A pumping portion(42) is formed in the cooling line(44) to circulate the coolant. The cooling line(44) includes the first line(44a) and the second line(44b). The second line(44b) is contacted with a bottom portion of the plate(43). The first line(44a) is branched into the first branch line(440a), the second branch line(440b), the third branch line(440c), and the fourth branch line(440d). A diameter of the second line(44b) is increased from the first branch line(440a) to the fourth branch line(440d).

Abstract translation: 目的：提供一种用于制造半导体的板冷却装置，以通过保持冷却剂通过分支冷却管线的压力来最小化热分布的变化。 构成：存储部分（40）用于存储冷却剂。 冷却管线（44）用于冷却板（43）。 泵送部分（42）形成在冷却管线（44）中以使冷却剂循环。 冷却管线（44）包括第一管线（44a）和第二管线（44b）。 第二线（44b）与板（43）的底部接触。 第一线（44a）分支为第一支线（440a），第二支线（440b），第三支线（440c）和第四支线（440d）。 第二线（44b）的直径从第一分支线（440a）增加到第四分支线（440d）。

公开(公告)号：KR1020010018205A

公开(公告)日：2001-03-05

申请号：KR1019990034056

申请日：1999-08-18

Applicant: 삼성전자주식회사

Inventor： 양윤식 ,  차훈 ,  김경대

IPC: H01L21/20

Abstract: PURPOSE: An apparatus for manufacturing a semiconductor is provided to improve a process uniformity, by installing a pumping diffusion apparatus is a reaction chamber to uniformly pump heat of the inside of the reaction chamber. CONSTITUTION: A reaction chamber(100) provides a space for reaction. A heating unit heats the inside of the reaction chamber. A temperature detecting unit detects a temperature of the inside of the reaction chamber. A pumping unit includes a pumping port(114) coupled to the reaction chamber, pumps heat to uniformly maintain the temperature of the reaction chamber. A control unit deals with a heating power supplying signal supplied to the heating unit, a temperature detecting signal and a pumping signal. A pumping diffusion unit is installed between the heating unit and the pumping port by radially forming a penetrating hole on a circumferential surface to diffuse and pump the heat of the inside of the reaction chamber according to an output of the pumping signal.

Abstract translation: 目的：提供一种用于制造半导体的装置以通过安装泵送扩散装置来提高加工均匀性，该反应室是反应室，以均匀地泵送反应室内部的热量。 构成：反应室（100）提供反应空间。 加热单元加热反应室的内部。 温度检测单元检测反应室内部的温度。 泵送单元包括联接到反应室的泵送端口（114），泵送热量以均匀地保持反应室的温度。 控制单元处理供应给加热单元的加热供电信号，温度检测信号和泵送信号。 泵送扩散单元通过在圆周表面上径向地形成一个穿透孔而安装在加热单元和泵送端口之间，以根据泵送信号的输出扩散和泵送反应室内部的热量。