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公开(公告)号：KR1020110051584A
公开(公告)日：2011-05-18
申请号：KR1020090108231
申请日：2009-11-10
Applicant: 삼성전자주식회사
CPC classification number: C01B31/0453 , B01J23/755 , B01J37/347 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/04 , C23C16/0281 , C23C16/26
Abstract: PURPOSE: A method for manufacturing graphene using catalytic alloy is provided to control the amount of carbon dissolved in a catalytic alloy layer using catalytic metal reducing the dissolving property of nickel with respect to the carbon as a catalytic layer. CONSTITUTION: A method for manufacturing grapheme using catalytic alloy includes the following: An alloy catalytic layer is formed on a substrate(100). A graphene layer(120) is formed on the alloy catalytic layer by supplying hydrocarbon gas. The alloy catalytic layer is composed of at least two metal selected from transition metal or selected from a group including nickel, copper, platinum, iron, and gold.
Abstract translation: 目的：提供使用催化合金制造石墨烯的方法，以使用催化金属来控制溶解在催化合金层中的碳的量，从而降低镍相对于作为催化剂层的碳的溶解性。 构成：使用催化合金制造字形的方法包括以下：在基板（100）上形成合金催化层。 通过供给碳氢化合物气体，在合金催化剂层上形成石墨烯层（120）。 合金催化剂层由选自过渡金属中的至少两种金属或选自镍，铜，铂，铁和金的组成。
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公开(公告)号：KR1020110042952A
公开(公告)日：2011-04-27
申请号：KR1020090099833
申请日：2009-10-20
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L21/268
CPC classification number: H01L29/1606 , H01L21/268 , H01L29/66742 , H01L29/778 , H01L29/78684 , H01L29/7781 , H01L29/78696
Abstract: PURPOSE: A graphene healing method using the laser beam and an electronic device manufacturing method thereof are provided to detect the defect of the graphene nano ribbon with the in-situ from the Raman spectroscope and remove the defect using the laser. CONSTITUTION: Whether the graphene nano ribbon is defective or not is determined(501). The laser light is irradiated on the graphene nano ribbon to heal the defect of the graphene nano ribbon(502). A laser light having the wavelength of 514 nm is used during the healing stage. A laser light having the power of 2 mW to 10 mW is used during the healing stage. A laser light is irradiated for 10 to 15 minutes during the healing stage.
Abstract translation: 目的：提供使用激光束的石墨烯愈合方法及其电子器件制造方法，以从拉曼光谱仪原位检测石墨烯纳米带的缺陷，并使用激光去除缺陷。 规定：是否确定石墨烯纳米带是否有缺陷（501）。 激光照射在石墨烯纳米带上以愈合石墨烯纳米带的缺陷（502）。 在愈合阶段使用波长为514nm的激光。 在愈合阶段使用功率为2mW至10mW的激光。 激光在愈合阶段照射10〜15分钟。
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公开(公告)号：KR1020110041791A
公开(公告)日：2011-04-22
申请号：KR1020090098778
申请日：2009-10-16
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L29/78 , B82B3/00
CPC classification number: H01L29/1606 , H01L29/42384 , H01L29/66742 , H01L29/7781 , H01L29/78645 , H01L29/78684 , H01L21/2255
Abstract: PURPOSE: A graphene device and a manufacturing method thereof are provided to simplify the process by firstly forming a gate electrode in embedded shape before forming the graphene. CONSTITUTION: An embedded gate is formed in the top of the substrate. The top oxide-nitride-oxide(28) is formed on the embedded gate. The graphene channel(30) and electrodes are included on the top oxide-nitride-oxide. A plurality of embedded gates is included in the top of the substrate with the interval. It is successively laminated or the graphene channel and electrodes are on the contrary laminated. The insulating layer is included on the graphene channel between electrode.
Abstract translation: 目的：提供石墨烯器件及其制造方法，以在形成石墨烯之前首先形成嵌入形状的栅电极来简化工艺。 构成：在基板的顶部形成嵌入式栅极。 顶部氧化物 - 氮化物（28）形成在嵌入式栅极上。 石墨烯通道（30）和电极包括在顶部氧化物 - 氮化物氧化物上。 多个嵌入式门以间隔包含在衬底的顶部。 相继层压或石墨烯通道和电极相反层压。 绝缘层包含在电极之间的石墨烯通道上。
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公开(公告)号：KR1020100066317A
公开(公告)日：2010-06-17
申请号：KR1020090053493
申请日：2009-06-16
Applicant: 삼성전자주식회사
Inventor： 정현종
Abstract: PURPOSE: A display device is provided to display information by controlling a light reflecting rate of a thin film layer. CONSTITUTION: A thin film layer(10) is formed on a substrate(2). In the thin film layer, a light absorption rate changes according to an applied electric field. An electrode(6) applies the electric field to the thin film layer. The electrode changes the electric field applied on the thin film layer. The thin film layer includes grapheme or graphite layers.
Abstract translation: 目的：提供一种显示装置，通过控制薄膜层的光反射率来显示信息。 构成：在基板（2）上形成薄膜层（10）。 在薄膜层中，光吸收率根据施加的电场而变化。 电极（6）将电场施加到薄膜层。 电极改变施加在薄膜层上的电场。 薄膜层包括石墨层或石墨层。
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公开(公告)号：KR1020090003801A
公开(公告)日：2009-01-12
申请号：KR1020070066767
申请日：2007-07-03
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/70775 , G03F7/7085 , H01L22/12
Abstract: The lithography device and lithography method are provided to improve the charge mobility of the channel by forming the patterned layer on the material layer. The structure(5) including the object of the lithography process is loaded on the stage(20). The electron gun(30) is equipped in the ceiling of the chamber(1) of the upside of the stage. The electron gun generates the electron beam. The first and second detectors(40, 50) can be equipped in the side wall of the chamber. The second detector can be the electron detector for detecting the diffraction pattern(or, the scattering pattern) of the electronics.
Abstract translation: 提供光刻设备和光刻方法以通过在材料层上形成图案化层来改善通道的电荷迁移率。 包括光刻处理对象的结构（5）被装载在平台（20）上。 电子枪（30）装在台的上侧的室（1）的天花板中。 电子枪产生电子束。 第一和第二检测器（40,50）可以装在腔室的侧壁中。 第二检测器可以是用于检测电子器件的衍射图案（或散射图案）的电子检测器。
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Patent Agency Ranking
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公开(公告)号：KR101920724B1
公开(公告)日：2018-11-21
申请号：KR1020120143825
申请日：2012-12-11
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/1606 , H01L29/1087 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/458 , H01L29/7391 , H01L29/78 , H01L29/78618
Abstract: 전자소자가개시된다. 개시된전자소자는, 반도체층과, 반도체층의소정영역에직접적으로컨택되는그래핀과, 그래핀상에형성되는금속층을포함하며, 반도체층은전체적으로도핑농도가일정하거나, 소정영역이 10cm이하의도핑농도를가지도록마련된다.
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公开(公告)号：KR101910976B1
公开(公告)日：2018-10-23
申请号：KR1020120077368
申请日：2012-07-16
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/78696 , B82Y10/00 , H01L29/1095 , H01L29/1606 , H01L29/66045 , H01L29/66477 , H01L29/78 , H01L29/78684 , Y10S977/734 , Y10S977/842 , Y10S977/938
Abstract: 본개시는그래핀채널층을포함하는고성능전계효과트랜지스터에관한것이다. 본발명의일 실시예에따르면기판과, 상기기판상에마련되며슬릿을구비하고있는그래핀채널층과, 상기그래핀채널층에전압을인가하기위해마련되며서로이격되어형성되는소스전극과드레인전극과, 상기그래핀채널층에전계를형성하기위해마련되는게이트전극및 상기그래핀채널층과상기게이트전극사이에마련되는게이트절연층을포함하는전계효과트랜지스터를제공할수 있다.
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公开(公告)号：KR101813176B1
公开(公告)日：2017-12-29
申请号：KR1020110032192
申请日：2011-04-07
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/66045 , H01L29/1606 , H01L29/401 , H01L29/66431 , H01L29/66742 , H01L29/778 , H01L29/786 , Y10S977/936
Abstract: 그래핀전자소자및 제조방법이개시된다. 개시된그래핀전자소자는게이트전극으로작용하는도전성기판과, 상기기판상에배치된게이트옥사이드와, 상기게이트옥사이드상에서서로이격된한쌍의제1금속과, 상기제1금속상에서상기제1금속사이로연장된그래핀채널층과, 상기그래핀채널층의양단에각각배치된소스전극과드레인전극을구비하다.
Abstract translation: 本发明公开了一种石墨烯电子器件及其制造方法。 公开的导电性基板，栅氧化物，以及一对彼此在所述栅氧化层隔开的第一金属的第一金属之间延伸的石墨烯的电子元件，所述设置充当栅电极的基板上的第一金属 以及分别设置在石墨烯沟道层两端的源电极和漏电极。
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