中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

41 records (took 0.024 seconds)

    ＩＩＩ족 질화물 단결정 및 그 성장 방법
    14.
    发明公开
    ＩＩＩ족 질화물 단결정 및 그 성장 방법 无效
    III类元素的氮化物单晶和其生长方法

    公开(公告)号：KR1020080109030A

    公开(公告)日：2008-12-16

    申请号：KR1020087025282

    申请日：2006-06-16

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미야나가미치마사 ,  미즈하라나호 ,  후지와라신스케 ,  나카하타세이지 ,  나카하타히데아키

    IPC: C30B29/38 ,  C30B23/00

    Abstract: A method of growing a good-quality single crystal of a Group III element nitride with satisfactory reproducibility; and a single crystal of a Group III element nitride obtained by the growth method. The method comprises growing a single crystal (3) of a Group III element nitride in a crystal growth vessel (11), and is characterized in that a porous object which is made of a metal carbide and has a porosity of 0.1-70% is used as at least part of the crystal growth vessel (11). Due to the use of this crystal growth vessel (11), 1-50% of a raw-material gas (4) present in the crystal growth vessel (11) can be discharged from the crystal growth vessel (11) through pores of the porous object. ® KIPO & WIPO 2009

    Abstract translation: 以良好的再现性生长III族元素氮化物的优质单晶的方法; 和通过生长方法获得的III族元素氮化物的单晶。 该方法包括在晶体生长容器（11）中生长III族元素氮化物的单晶（3），其特征在于，由金属碳化物制成且孔隙率为0.1-70％的多孔物体为 用作晶体生长容器（11）的至少一部分。 由于使用这种晶体生长容器（11），存在于晶体生长容器（11）中的原料气体（4）的1-50％可以从晶体生长容器（11）中通过孔 多孔物体 ®KIPO＆WIPO 2009

    질화 알루미늄 결정의 제조 방법, 질화 알루미늄 결정,질화 알루미늄 결정 기판 및 반도체 디바이스
    15.
    发明公开
    질화 알루미늄 결정의 제조 방법, 질화 알루미늄 결정,질화 알루미늄 결정 기판 및 반도체 디바이스 有权
    制造氮化铝晶体，氮化铝晶体，氮化钛晶体衬底和半导体器件的方法

    公开(公告)号：KR1020080082647A

    公开(公告)日：2008-09-11

    申请号：KR1020087014663

    申请日：2007-01-10

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미즈하라나호 ,  미야나가미치마사 ,  가와세도모히로 ,  후지와라신스케

    IPC: C30B29/38 ,  H01L21/338 ,  H01L29/812

    CPC classification number: H01L29/7787 ,  C30B23/00 ,  C30B29/403 ,  H01L29/2003 ,  H01L29/66462 ,  Y10T428/26

    Abstract: Provided are an AlN crystal manufacturing method by which a semiconductor device having excellent characteristics can be obtained, an AlN crystal, an AlN crystal substrate and a semiconductor device manufactured by using such AlN crystal substrate. The AlN crystal manufacturing method includes a step of growing an AlN crystal on the surface of a SiC seed crystal substrate, and a step of taking out at least a part of the AlN crystal within a range of 2mm or more but not more than 60mm on the AlN crystal side from the surface of the SiC seed crystal substrate. The AlN crystal and the AlN crystal substrate are obtained by such method and the semiconductor device is manufactured by using such AlN crystal substrate.

    Abstract translation: 提供了可以获得具有优异特性的半导体器件的AlN晶体制造方法，使用这种AlN晶体衬底制造的AlN晶体，AlN晶体衬底和半导体器件。 AlN晶体制造方法包括在SiC籽晶衬底的表面上生长AlN晶体的步骤，以及将AlN晶体的至少一部分取出至2mm以上且60mm以下的工序 来自SiC晶种衬底表面的AlN晶体侧。 通过这种方法获得AlN晶体和AlN晶体衬底，并且通过使用这种AlN晶体衬底制造半导体器件。

    ＡｌＮ 결정 및 그 성장 방법과 ＡｌＮ 결정 기판
    16.
    发明公开
    ＡｌＮ 결정 및 그 성장 방법과 ＡｌＮ 결정 기판 无效
    ALN晶体及其生长方法和ALN晶体基板

    公开(公告)号：KR1020080030570A

    公开(公告)日：2008-04-04

    申请号：KR1020077029896

    申请日：2006-07-10

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미즈하라나호 ,  미야나가미치마사 ,  가와세도모히로 ,  후지와라신스케

    IPC: C30B29/38 ,  C30B23/00

    CPC classification number: C30B23/02 ,  C30B23/066 ,  C30B25/02 ,  C30B29/403 ,  Y10T428/2982

    Abstract: This invention provides an AlN crystal, which can be applied to various semiconductor devices, has a large diameter, and has good crystallinity, and a method for growing the same and an AlN crystal substrate. The method for growing an AlN crystal comprises growing an AlN crystal (4) on a seed crystal substrate (2) disposed within a crystal growth chamber (24) in a crystal growth container (12) provided within a reaction vessel by vapor growth and is characterized in that, in the growth of the crystal, a carbon-containing gas is fed into a crystal growth chamber (24).

    Abstract translation: 本发明提供可应用于各种半导体器件的具有大直径且具有良好结晶度的AlN晶体及其生长方法和AlN晶体衬底。 生长AlN晶体的方法包括通过蒸气生长在设置在反应容器内的晶体生长容器（12）中的晶体生长室（24）中的晶种基底（2）上生长AlN晶体（4），并且 其特征在于，在晶体生长中，将含碳气体供给到晶体生长室（24）中。

Patent Agency Ranking