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    ＡＩＮ 결정 기판의 제조 방법, ＡＩＮ 결정의 성장 방법 및 ＡＩＮ 결정 기판
    1.
    发明公开
    ＡＩＮ 결정 기판의 제조 방법, ＡＩＮ 결정의 성장 방법 및 ＡＩＮ 결정 기판 无效
    制造ALN晶体的基板的方法，ALN晶体的生长方法和ALN晶体的基板

    公开(公告)号：KR1020090029201A

    公开(公告)日：2009-03-20

    申请号：KR1020087030004

    申请日：2007-06-15

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미즈하라나호 ,  가와세도모히로 ,  미야나가미치마사

    IPC: H01L21/203 ,  H01L33/30

    CPC classification number: C30B29/403 ,  C30B23/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02631

    Abstract: A process for producing a substrate of AlN crystal that realizes production of a large high-quality substrate of AlN crystal; a method of growing an AlN crystal that realizes growing of a large high-quality AlN crystal; and a substrate of AlN crystal consisting of AlN crystal grown by the growing method. There is provided a process for producing a substrate of AlN crystal, comprising the step of growing on a hetero-substrate an AlN crystal to a thickness of 0.4r or greater in which r means the diameter of the hetero-substrate according to a sublimation method and the step of forming a substrate of AlN crystal from a region of AlN crystal 200 mum or more apart from the hetero-substrate. Further, there is provided a method of growing an AlN crystal, comprising growing an AlN crystal on the substrate of AlN crystal produced by the above process according to a sublimation method, and provided a substrate of AlN crystal comprised of an AlN crystal grown by the growing method.

    Abstract translation: 一种制造AlN晶体的基板的方法，其实现了大量高质量的AlN晶体基板的制造; 生长AlN晶体的方法，其实现了大型高品质AlN晶体的生长; 以及通过生长方法生长的由AlN晶体组成的AlN晶体的衬底。 提供了一种制造AlN晶体的衬底的方法，包括在异质衬底上生长厚度为0.4r或更大的AlN晶体的步骤，其中r表示根据升华法的异质衬底的直径 以及从异质衬底的AlN晶体200μm以上的区域形成AlN晶体的衬底的工序。 此外，提供了一种生长AlN晶体的方法，其包括在根据升华方法的上述工艺生产的AlN晶体的衬底上生长AlN晶体，并且提供由AlN晶体生长的AlN晶体的衬底，AlN晶体由 生长方法。

    질화 알루미늄 결정의 제조 방법, 질화 알루미늄 결정,질화 알루미늄 결정 기판 및 반도체 디바이스
    3.
    发明公开
    질화 알루미늄 결정의 제조 방법, 질화 알루미늄 결정,질화 알루미늄 결정 기판 및 반도체 디바이스 有权
    制造氮化铝晶体，氮化铝晶体，氮化钛晶体衬底和半导体器件的方法

    公开(公告)号：KR1020080082647A

    公开(公告)日：2008-09-11

    申请号：KR1020087014663

    申请日：2007-01-10

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미즈하라나호 ,  미야나가미치마사 ,  가와세도모히로 ,  후지와라신스케

    IPC: C30B29/38 ,  H01L21/338 ,  H01L29/812

    CPC classification number: H01L29/7787 ,  C30B23/00 ,  C30B29/403 ,  H01L29/2003 ,  H01L29/66462 ,  Y10T428/26

    Abstract: Provided are an AlN crystal manufacturing method by which a semiconductor device having excellent characteristics can be obtained, an AlN crystal, an AlN crystal substrate and a semiconductor device manufactured by using such AlN crystal substrate. The AlN crystal manufacturing method includes a step of growing an AlN crystal on the surface of a SiC seed crystal substrate, and a step of taking out at least a part of the AlN crystal within a range of 2mm or more but not more than 60mm on the AlN crystal side from the surface of the SiC seed crystal substrate. The AlN crystal and the AlN crystal substrate are obtained by such method and the semiconductor device is manufactured by using such AlN crystal substrate.

    Abstract translation: 提供了可以获得具有优异特性的半导体器件的AlN晶体制造方法，使用这种AlN晶体衬底制造的AlN晶体，AlN晶体衬底和半导体器件。 AlN晶体制造方法包括在SiC籽晶衬底的表面上生长AlN晶体的步骤，以及将AlN晶体的至少一部分取出至2mm以上且60mm以下的工序 来自SiC晶种衬底表面的AlN晶体侧。 通过这种方法获得AlN晶体和AlN晶体衬底，并且通过使用这种AlN晶体衬底制造半导体器件。

    ＡｌＮ 결정 및 그 성장 방법과 ＡｌＮ 결정 기판
    4.
    发明公开
    ＡｌＮ 결정 및 그 성장 방법과 ＡｌＮ 결정 기판 无效
    ALN晶体及其生长方法和ALN晶体基板

    公开(公告)号：KR1020080030570A

    公开(公告)日：2008-04-04

    申请号：KR1020077029896

    申请日：2006-07-10

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미즈하라나호 ,  미야나가미치마사 ,  가와세도모히로 ,  후지와라신스케

    IPC: C30B29/38 ,  C30B23/00

    CPC classification number: C30B23/02 ,  C30B23/066 ,  C30B25/02 ,  C30B29/403 ,  Y10T428/2982

    Abstract: This invention provides an AlN crystal, which can be applied to various semiconductor devices, has a large diameter, and has good crystallinity, and a method for growing the same and an AlN crystal substrate. The method for growing an AlN crystal comprises growing an AlN crystal (4) on a seed crystal substrate (2) disposed within a crystal growth chamber (24) in a crystal growth container (12) provided within a reaction vessel by vapor growth and is characterized in that, in the growth of the crystal, a carbon-containing gas is fed into a crystal growth chamber (24).

    Abstract translation: 本发明提供可应用于各种半导体器件的具有大直径且具有良好结晶度的AlN晶体及其生长方法和AlN晶体衬底。 生长AlN晶体的方法包括通过蒸气生长在设置在反应容器内的晶体生长容器（12）中的晶体生长室（24）中的晶种基底（2）上生长AlN晶体（4），并且 其特征在于，在晶体生长中，将含碳气体供给到晶体生长室（24）中。

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