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公开(公告)号：KR1020150135976A
公开(公告)日：2015-12-04
申请号：KR1020140063293
申请日：2014-05-26
Applicant: 제일모직주식회사
IPC: C09D183/14 , C09D183/16 , C09D183/04 , B05D1/00 , B05D3/00
CPC classification number: C09D183/04 , C08G77/12 , C08G77/26 , C08G77/54 , C08G77/60 , C09D183/02 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1283 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L28/90 , C09D183/14 , B05D1/005 , B05D3/007
Abstract: 수소화폴리실라잔, 수소화폴리실록사잔, 또는이들의조합을포함하는실리카계화합물, 그리고용매를포함하는실리카계막 형성용조성물로서, 입경이 0.2 ㎛내지 1 ㎛인파티클을 10 개/㎖이하로포함하는실리카계막 형성용조성물에관한것이다.
Abstract translation: 本发明涉及形成二氧化硅基膜的组合物，其包含：包含氢化聚硅氮烷，氢化聚硅氧烷或其组合的二氧化硅基化合物; 和溶剂，其中用于形成二氧化硅基膜的组合物包含每毫升小于或等于10个颗粒，其中颗粒的直径为0.2-1μm。
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公开(公告)号：KR1020150039084A
公开(公告)日：2015-04-09
申请号：KR1020140110915
申请日：2014-08-25
Applicant: 제일모직주식회사
IPC: C08L83/00 , C08L83/14 , C08L83/16 , C08J5/18 , C08J7/04 , C09D183/04 , H01L21/312
Abstract: 중량평균분자량이 20,000 내지 160,000 인실리콘함유중합체; 그리고용매를포함하는실리카계막 형성용조성물, 이를사용하여얻어지는실리카계막, 그리고상기실리카계막의제조방법에관한것이다.
Abstract translation: 本发明涉及一种二氧化硅系膜形成用组合物，其特征在于，含有重均分子量为20000〜160000的含硅聚合物， 和溶剂，通过使用它们获得的二氧化硅基膜以及二氧化硅基膜的制造方法。
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Patent Agency Ranking
公开(公告)号：KR1020140087908A
公开(公告)日：2014-07-09
申请号：KR1020120158707
申请日：2012-12-31
Applicant: 제일모직주식회사
Abstract: Provided are a method for manufacturing a polymer which is a method for manufacturing a polysilazane having a Si-N linkage on a main chain, and comprises the step of polymerizing through a disproportionation reaction and rearrangement reaction by activating an amino silane monomer represented by the following chemical formula 1 with the existence of a nucleophilic compound capable of coordination of the Si atom of the amino silane, and a composition for forming an insulation film comprising the manufactured polymer. [Chemical formula 1] A polysilazne polymer not substantially comprising chlorine can be manufactured, and an insulation film with the significantly less number of defects, in the case of using the polymer as a component of the composition for forming a silica-based insulation film.
Abstract translation: 提供一种制造聚合物的方法，该聚合物是在主链上具有Si-N键的聚硅氮烷的制造方法，包括通过歧化反应和重排反应进行聚合的步骤，其通过活化下述的氨基硅烷单体 存在能够配位氨基硅烷的Si原子的亲核化合物的化学式1和用于形成包含所制备的聚合物的绝缘膜的组合物。 [化学式1]在使用聚合物作为形成二氧化硅系绝缘膜的组合物的成分的情况下，可以制造实质上不含氯的聚硅氮烷聚合物，以及具有明显较少缺陷数量的绝缘膜。
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公开(公告)号：KR1020140087903A
公开(公告)日：2014-07-09
申请号：KR1020120158699
申请日：2012-12-31
Applicant: 제일모직주식회사
Abstract: Provided are a method for manufacturing a polymer which is a method for manufacturing a polysilazane having a Si-N linkage on a main chain, and comprises the step of reacting an amino silane monomer represented by the following chemical formula 1 with a nitrogen contained compound represented by chemical formula 1 with the existence of a nucleophilic compound capable of coordination of the Si atom of the amino silane, and a method for manufacturing a polymer comprising comprising the manufactured polymer. [Chemical formula 1] A polysilazne or polysiloxazane polymer not substantially comprising chlorine can be manufactured, and an insulation film with the significantly less number of defects, in the case of using the polymer as a component of the composition for forming a silica-based insulation film.
Abstract translation: 提供一种制造聚合物的方法，该聚合物是在主链上具有Si-N键的聚硅氮烷的制造方法，包括使由以下化学式1表示的氨基硅烷单体与含氮化合物表示的步骤 通过存在能够配位氨基硅烷的Si原子的亲核化合物的化学式1，以及包含制造的聚合物的聚合物的制造方法。 [化学式1]在使用聚合物作为形成二氧化硅基绝缘的组合物的组分的情况下，可以制造基本上不含氯的聚硅氮烷或聚硅氧烷氮化合物聚合物，并且具有显着更少数量的缺陷的绝缘膜 电影。
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公开(公告)号：KR101767083B1
公开(公告)日：2017-08-10
申请号：KR1020130133605
申请日：2013-11-05
Applicant: 제일모직주식회사
Inventor： 송현지 , 박은수 , 임상학 , 곽택수 , 김고은 , 김미영 , 김보선 , 김봉환 , 나융희 , 배진희 , 서진우 , 윤희찬 , 이한송 , 전종대 , 한권우 , 홍승희 , 황병규
CPC classification number: C08G77/54 , C08G77/60 , C08G77/62 , C09D183/02 , C09D183/14 , C09D183/16 , H01B3/02 , H01B3/303 , H01B3/46 , H01L21/02164 , H01L21/02211 , H01L21/02222 , H01L21/02255 , H01L21/0229 , H01L21/02326
Abstract: 수소화폴리실록사잔에폴리실란, 폴리사이클로실란및 실란올리고머로이루어진군에서선택되는실란화합물을반응시켜제조되는개질수소화폴리실록사잔을제공한다. 상기개질수소화폴리실록사잔은, 실리콘원자에대한질소원자의몰비가작기때문에실리카계절연층형성용조성물에적용되어실리카계절연층형성시막 수축률을현저히감소시킬수 있다.
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公开(公告)号：KR101599952B1
公开(公告)日：2016-03-04
申请号：KR1020120158699
申请日：2012-12-31
Applicant: 제일모직주식회사
Abstract: 주쇄에 Si-N 연결(linkage)을가지는폴리실라잔중합체의제조방법으로서, 하기화학식 1로나타내어지는아미노실란단량체를, 상기아미노실란단량체의 Si원자를배위할수 있는친핵성화합물의존재하에, 하기화학식 2로나타내어지는질소함유화합물과반응시키는단계를포함하는중합체제조방법및 이로부터제조된중합체를포함하는중합체제조방법이제공된다:NRRR상기화학식 1에서, R, R, 및 R는동일하거나상이하며, 각각독립적으로, 수소, -Si(R), C1 내지 C30의알킬기, C6 내지 C20의아릴기, C1 내지 C10의알콕시기, C6 내지 C20의아릴옥시기, C1 내지 C20의알킬또는아릴옥시카르보닐기, C1 내지 C20의아실기, 또는 C1 내지 C20의아실옥시기이되, R, R, 및 R중하나이상은 -Si(R)이고, 여기서 R는동일하거나상이하며, 각각독립적으로, 수소, C1 내지 C30의알킬기, C6 내지 C20의아릴기, C1 내지 C10의알콕시기, 또는 C6 내지 C20의아릴옥시기이되, R중하나이상은수소이고;NHR상기화학식 2에서, R는 R는수소, C1 내지 C30의알킬기, C1 내지 C10의알콕시기, C6 내지 C20의아릴옥시기, C1 내지 C20의알킬또는아릴옥시카르보닐기, -NH, C1 내지 C20의아실기, C1 내지 C20의아실옥시기히드록시기, 또는아민기임.
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公开(公告)号：KR1020150042028A
公开(公告)日：2015-04-20
申请号：KR1020130120732
申请日：2013-10-10
Applicant: 제일모직주식회사
Abstract: 규소함유화합물, 실리콘탄성체및 용매를포함하는절연막용조성물, 상기절연막용조성물로부터형성된절연막및 상기절연막을포함하는전자소자에관한것이다.
Abstract translation: 本发明涉及包含含硅化合物，硅氧烷弹性体和溶剂的绝缘膜组合物，由其制成的绝缘膜，以及包含该组合物的电子器件。 根据本发明的实施方案，提供了一种用于形成具有改善的耐冲击性的绝缘膜的绝缘膜的组合物。
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