公开(公告)号：KR101693612B1

公开(公告)日：2017-01-06

申请号：KR1020130017054

申请日：2013-02-18

Applicant: 제일모직주식회사

Inventor： 김윤준 ,  권효영 ,  김혜정 ,  이충헌 ,  조연진 ,  최유정

IPC: C07C39/12 ,  G03F7/004

Abstract: 하기화학식 1로표현되는하드마스크조성물용모노머, 상기모노머를포함하는하드마스크조성물및 이를사용한패턴형성방법에관한것이다. [화학식 1]상기화학식 1에서, A, A′, A″, L, L′,X내지 X및 n은명세서에서정의한바와같다.

Abstract translation: 本发明涉及由式1表示的硬掩模组合物用单体，包含该单体的硬掩模组合物以及使用该硬掩模组合物形成图案的方法。 在式1中，A，A'，A“，L，L'，X ^ 1至X ^ 3和n与说明书中所定义相同。

公开(公告)号：KR101682021B1

公开(公告)日：2016-12-02

申请号：KR1020130029930

申请日：2013-03-20

Applicant: 제일모직주식회사

Inventor： 이범진 ,  박요철 ,  김윤준 ,  조연진

IPC: G03F1/00 ,  G03F7/004 ,  G03F7/26 ,  H01L21/027

Abstract: 이미드기와연결되어있는지방족또는방향족고리가포함된구조단위를포함하는중합체, 그리고용매를포함하고, 상기구조단위는히드록시기, 티오닐기, 티올기, 시아노기, 술폰기, 치환또는비치환된아세틸렌기(C≡C), 치환또는비치환된아미노기, 치환또는비치환된 C1 내지 C30 알킬기, 치환또는비치환된 C1 내지 C20 알킬아민기, 또는치환또는비치환된 C1 내지 C30 알콕시기또는이들의조합을적어도하나포함하는하드마스크조성물을제공한다.

Abstract translation: 本发明提供一种硬掩模组合物，其包括：具有结构单元的聚合物，其包含与酰亚胺基连接的脂族或芳香环; 和溶剂。 结构单元包括羟基，亚硫酰基，硫醇基，磺酸基，取代或未取代的乙炔基（C≡C），取代或未取代的氨基，取代或未取代的C1〜C30烷基，取代或未取代的C1， 至C20芳基胺基，取代或未取代的C1至C30烷氧基或其组合。

公开(公告)号：KR101583227B1

公开(公告)日：2016-01-07

申请号：KR1020130071125

申请日：2013-06-20

Applicant: 제일모직주식회사

Inventor： 박은수 ,  나융희 ,  송현지 ,  임완희 ,  조연진 ,  황병규

IPC: H01L21/312 ,  H01L21/31

Abstract: 실록산화합물을적용하는단계, 규소-질소함유화합물을적용하는단계, 그리고상기실록산화합물과상기규소-질소함유화합물을동시에열처리하여상기규소-질소함유화합물을실리카로변환하는단계를포함하는실리카막의형성방법, 상기방법으로형성된실리카막 및상기실리카막을포함하는전자소자에관한것이다.

公开(公告)号：KR101556273B1

公开(公告)日：2015-09-30

申请号：KR1020120090232

申请日：2012-08-17

Applicant: 제일모직주식회사

Inventor： 최유정 ,  권효영 ,  김영민 ,  신승욱 ,  이충헌 ,  조연진

IPC: C07C309/67 ,  C08F20/38 ,  G03F7/027

Abstract: 하기화학식 1로표현되는열산발생제결합모노머, 상기열산발생제결합모노머로부터얻어진중합체, 상기중합체를포함하는레지스트하층막용조성물및 상기레지스트하층막용조성물을사용한패턴형성방법에관한것이다. [화학식 1]상기화학식 1에서, A, L, R, R및 n은명세서에서정의한바와같다.

公开(公告)号：KR1020140125203A

公开(公告)日：2014-10-28

申请号：KR1020130043079

申请日：2013-04-18

Applicant: 제일모직주식회사

Inventor： 배진희 ,  이한송 ,  임완희 ,  김고은 ,  곽택수 ,  김보선 ,  김상균 ,  나융희 ,  박은수 ,  서진우 ,  송현지 ,  조연진 ,  한권우 ,  황병규

IPC: C11D3/43 ,  H01L21/3105

CPC classification number: H01L21/0206 ,  C08G77/54 ,  C08G77/62 ,  C09D183/14 ,  C09D183/16 ,  C11D7/266 ,  C11D7/5022 ,  C11D11/0047 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L27/1085 ,  H01L28/40 ,  C11D3/43 ,  H01L21/3105

Abstract: The present invention relates to a rinse liquid for an insulating film and a method for rinsing an insulating film, wherein the rinse liquid includes a solvent represented by chemical formula 1. In chemical formula 1, R^1 and R^a to R^e are defined as in the specification.

Abstract translation: 本发明涉及一种用于绝缘膜的冲洗液和一种用于漂洗绝缘膜的方法，其中冲洗液包括由化学式1表示的溶剂。在化学式1中，R 1和R 2 a至R e 被定义为在说明书中。

公开(公告)号：KR1020140085122A

公开(公告)日：2014-07-07

申请号：KR1020120155330

申请日：2012-12-27

Applicant: 제일모직주식회사

Inventor： 이성재 ,  전환승 ,  조연진 ,  이철호 ,  이충헌

IPC: G03F1/00 ,  C07C33/26 ,  G03F7/26 ,  H01L21/027

CPC classification number: C07C33/26 ,  C07C43/23 ,  G03F7/0752 ,  G03F7/09 ,  G03F7/40 ,  G03F1/10 ,  G03F1/50 ,  G03F7/20 ,  G03F7/265 ,  H01L21/0271 ,  H01L21/0273

Abstract: The present invention relates to a monomer for a hard mask composition represented by Chemical formula 1, a hard mask composition including the monomer, and a method for forming patterns using the same. [Chemical formula 1] In Chemical formula 1, A0, A1, A2, L1, L1′, L2, L2′, X1, X2, m and n are defined as in the specification.

Abstract translation: 本发明涉及由化学式1表示的硬掩模组合物用单体，包含该单体的硬掩模组合物以及使用该单体形成图案的方法。 [化学式1]在化学式1中，A0，A1，A2，L1，L1'，L2，L2'，X1，X2，m和n如说明书中所定义。

公开(公告)号：KR1020140085120A

公开(公告)日：2014-07-07

申请号：KR1020120155328

申请日：2012-12-27

Applicant: 제일모직주식회사

Inventor： 이성재 ,  문준영 ,  박유정 ,  전환승 ,  조연진 ,  이철호

IPC: G03F1/00 ,  G03F7/26 ,  H01L21/027

CPC classification number: G03F1/10 ,  G03F7/265 ,  H01L21/0271 ,  H01L21/0273

Abstract: Provided is a hard mask composition which includes an aromatic ring-containing compound and a solvent including a structure unit represented by chemical formula 1. [Chemical formula 1] In chemical formula 1, L, X and n are defined as in the specification. In addition, a method for forming patterns using the hard mask composition and a semiconductor integrated circuit device including multiple patterns formed by the method are provided.

Abstract translation: 提供包含含芳环的化合物和包含由化学式1表示的结构单元的溶剂的硬掩模组合物。[化学式1]在化学式1中，L，X和n如说明书中所定义。 此外，提供了使用该硬掩模组合物形成图案的方法以及包括通过该方法形成的多个图案的半导体集成电路器件。

公开(公告)号：KR1020140083696A

公开(公告)日：2014-07-04

申请号：KR1020120153753

申请日：2012-12-26

Applicant: 제일모직주식회사

Inventor： 문준영 ,  조연진 ,  이성재 ,  박유정 ,  윤용운 ,  이철호 ,  이충헌

IPC: H01L21/28 ,  H01L21/768

CPC classification number: H01L21/76804 ,  H01L21/76808 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method for forming a dual damascene structure of a semiconductor element which is as follows: (a) first and second insulation layers are sequentially formed on a substrate; (b) a resist mask with a pattern for forming a via-hole is formed on the second insulation layer; (c) a via-hole is formed to a bottom of the first insulation layer; (d) a hard mask layer is formed on the via-hole and the second insulation layer by using a spin-on-coating method; (e) a resist mask with a pattern for forming a trench hole is formed on the hard mask layer; (f) a first trench hole is formed to a bottom of the second insulation layer through the resist mask; (g) each of portions of a hard mask layer, which are formed on the via-hole and the second insulation layer, are removed; (h) a portion of the second insulation layer between a top corner of the via-hole (via top corner) and a bottom corner of the first trench hole (trench bottom corner) is removed to form a second trench hole; (i) a remaining hard mask layer, which is formed on the via-hole and the second insulation layer, is removed; and (j) the via-hole and the second trench hole are buried with a conductive material, such that an upper interconnection is formed.

Abstract translation: 提供一种用于形成半导体元件的双镶嵌结构的方法，其如下：（a）第一和第二绝缘层依次形成在基板上; （b）在第二绝缘层上形成具有用于形成通孔的图案的抗蚀剂掩模; （c）在第一绝缘层的底部形成通孔; （d）使用旋涂法在通孔和第二绝缘层上形成硬掩模层; （e）在硬掩模层上形成具有用于形成沟槽的图案的抗蚀剂掩模; （f）通过抗蚀剂掩模，在第二绝缘层的底部形成第一沟槽; （g）去除形成在通孔和第二绝缘层上的硬掩模层的各部分; （h）去除所述通孔的顶角（经由顶角）和所述第一沟槽的底角（沟槽底角）之间的所述第二绝缘层的一部分，以形成第二沟槽; （i）除去形成在通孔和第二绝缘层上的剩余硬掩模层; 和（j）通孔和第二沟槽用导电材料掩埋，从而形成上互连。

公开(公告)号：KR1020140033533A

公开(公告)日：2014-03-19

申请号：KR1020120090232

申请日：2012-08-17

Applicant: 제일모직주식회사

Inventor： 최유정 ,  권효영 ,  김영민 ,  신승욱 ,  이충헌 ,  조연진

IPC: C07C309/67 ,  C08F20/38 ,  G03F7/027

CPC classification number: C07C309/67 ,  C08F20/38 ,  G03F7/027

Abstract: The present invention relates to: a thermal acid generator bound monomer denoted by chemical formula 1; a polymer obtained from the thermal acid generator bound monomer; a resist under-layer composition including the polymer; and a formation method of patterns using the resist under-layer composition. In the chemical formula 1, A, L, R1, R2, and n are described in the present specification.

Abstract translation: 本发明涉及：由化学式1表示的热酸产生剂结合单体; 从热酸发生剂结合的单体获得的聚合物; 包含所述聚合物的抗蚀剂底层组合物; 以及使用抗蚀剂底层组合物的图案的形成方法。 在化学式1中，在本说明书中描述了A，L，R1，R2和n。

公开(公告)号：KR1020140023841A

公开(公告)日：2014-02-27

申请号：KR1020120142103

申请日：2012-12-07

Applicant: 제일모직주식회사

Inventor： 권효영 ,  김혜정 ,  신승욱 ,  조연진

IPC: C07C309/73 ,  C07C309/75 ,  G03F7/004

CPC classification number: C07C309/73 ,  C07C309/75 ,  G03F7/004 ,  G03F7/0042 ,  G03F7/0045 ,  G03F7/20 ,  G03F7/2002

Abstract: The present invention relates to a thermal acid generator bound monomer and polymers obtained from the thermal acid generator bound monomer and a resist underlayer composition including the polymer and a method for forming patterns using the resist underlayer composition represented by the following chemical formula 1. In Formula 1, the definition of R1, R4, L, and n is same as being described in the statement.

Abstract translation: 本发明涉及热酸产生剂结合单体和由热酸发生剂结合单体获得的聚合物和包含该聚合物的抗蚀剂下层组合物和使用由以下化学式1表示的抗蚀剂下层组合物形成图案的方法。在式 1，R1，R4，L和n的定义与说明书中描述的相同。