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公开(公告)号：KR1020020078705A
公开(公告)日：2002-10-19
申请号：KR1020010018724
申请日：2001-04-09
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A composition of FeTiN based soft magnetic film alloy is provided to form the composition having a micro grain structure by using a sputtering method without performing an additional thermal process. CONSTITUTION: A composition of FeTiN based soft magnetic film alloy is FexTiyNz where x,y,z are at% and 85
Abstract translation: 目的：提供基于FeTiN的软磁膜合金的组合物，通过使用溅射法形成具有微晶粒结构的组合物，而不进行额外的热处理。 构成：FeTiN基软磁膜合金的组成为FexTiyNz，其中x，y，z为％，85 <= x <= 95,1 <= y <= 4,1 <= z <= 11（x + y + Z = 100）。 通过在FeTiN系软磁合金的组成中添加Cr，形成FeTiN系软磁膜合金的组成。 Cr的量相当于FeTiN系软磁性合金的总成分的5以下。 通过使用溅射法或物理气相沉积法形成FeTiN基软磁性合金的组成。 在组合物的沉积中，由纳米尺寸的颗粒形成α-Fe，Ti的氮化物和Cr的氮化物。
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公开(公告)号：KR100263741B1
公开(公告)日：2000-08-01
申请号：KR1019980002647
申请日：1998-01-31
Applicant: 한국과학기술연구원
Abstract: PURPOSE: Sm-Fe based or Sm-Fe-B based silicon microcantilever having superior magnetic-transformable property even in the low strength of magnetic field is provided to be suitable for the application to a driving material for micro device such as micro valve and micro pump. CONSTITUTION: In the Smx-Fey based silicon microcantilever, x and y are respectively atomic mass percentage satisfying the follow inequalities: 23≤x≤58 and 42 ≤y≤77(x+y=100). Further, in the Smx-Fey-Bz based silicon microcantilever, x, y and z are atomic mass percentage satisfying the follow inequalities: 23≤x≤57.6 and 42≤y≤ 76.3 and 0.4≤z≤0.7(x+y+z=100).
Abstract translation: 目的：即使在低磁场强度下也具有优异的磁变换性能的Sm-Fe系或Sm-Fe-B系硅微型悬臂梁适用于微型阀和微型微型装置的驱动材料 泵。 构成：在基于Smx-Fey的硅微悬臂梁中，x和y分别是满足以下不等式的原子质量百分比：23≤x≤58和42≤y≤77（x + y = 100）。 此外，在Smx-Fey-Bz基硅微悬臂梁中，x，y和z是满足以下不等式的原子质量百分比：23≤x≤57.6和42≤y≤76.3和0.4≤z≤0.7（x + y + z = 100）。
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公开(公告)号：KR101753342B1
公开(公告)日：2017-07-04
申请号：KR1020160045820
申请日：2016-04-14
Applicant: 한국과학기술연구원
CPC classification number: H01L29/66984 , B82Y10/00 , H01L27/222 , H01L29/045 , H01L29/0673 , H01L29/417 , H01L29/41725 , H01L29/47 , H01L29/82 , H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: 본발명의일 실시예에따른상온작동스핀제어전자소자는, 기판상에위치하고, 제1 방향으로긴 형상을가지며, 제1 방향에수직인제2 방향으로절단된단면이삼각형인저차원나노구조를포함하는전송채널, 기판상에위치하고전송채널과교차되며, 전송채널의일부를덮는소스전극, 그리고기판상에서소스전극과이격되어위치하고, 전송채널과교차되며, 전송채널의일부를덮는드레인전극을포함한다.
Abstract translation: 根据本发明实施例的室温下的旋转控制电子器件包括：低维纳米结构，其位于基板上并且在第一方向上具有长形形状，并且具有在垂直于第一方向的方向上切割的三角形横截面 源电极位于衬底上并与传输通道相交并覆盖传输通道的一部分，漏电极与衬底上的源电极间隔开并与传输通道相交并覆盖传输通道的一部分 的。
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公开(公告)号：KR101490999B1
公开(公告)日：2015-02-09
申请号：KR1020130095587
申请日：2013-08-12
Applicant: 한국과학기술원 , 한국기초과학지원연구원 , 한국과학기술연구원
CPC classification number: H04L27/04 , H01F10/32 , H01F10/329 , H01L43/00 , H03B15/006 , H04L5/0005 , H04L5/06 , H04L25/4917 , H04L27/06
Abstract: 본 발명은 서로 다른 주파수 특성을 갖고, 입력 데이터를 OOK 변조 또는 멀티레벨 ASK 변조하여 다중대역의 OOK 변조신호 또는 다중대역의 멀티레벨 ASK 변조신호를 출력하는 복수의 스핀토크전달소자, 상기 복수의 스핀토크전달소자의 개별 임피던스를 정합하는 복수의 정합 네트워크 및 상기 복수의 정합 네트워크의 일단부로부터 상기 다중대역의 OOK 변조신호 또는 상기 다중대역의 멀티레벨 ASK 변조신호를 전송받아 동시에 외부로 송신하는 광대역 안테나를 포함하는 것을 특징으로 하는 다중대역 주파수와 진폭을 동시에 변조하는 스핀트로닉스 무선통신 시스템에 관한 것이다.
Abstract translation: 本发明涉及用于同时调制多频带频率和振幅的自旋电子学无线通信系统。 自旋电子学无线通信系统包括多个自旋扭矩传递元件，多个匹配网络和宽带天线。 自旋转矩传递元件具有各自不同的频率特性; 将OOK调制或多级ASK调制应用于输入数据; 并输出多频带OOK调制信号或多频带多电平ASK调制信号。 匹配网络匹配自旋扭矩传递元件的单个阻抗。 宽带天线从匹配网络的每一端接收多频带OOK调制信号或多频带多电平ASK调制信号，同时将信号发送到外部。
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Patent Agency Ranking
公开(公告)号：KR1020140072983A
公开(公告)日：2014-06-16
申请号：KR1020120140275
申请日：2012-12-05
Applicant: 한국과학기술연구원
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/66984
Abstract: The present invention relates to a lateral spin device. The lateral spin device comprises: a transmission channel which is formed on a substrate; a source which is formed on the transmission channel; and a drain which comprises a drain free layer, a drain middle layer, and a drain fixing layer which are formed on the transmission channel. In the drain, the magnetic direction of the drain free layer against the drain fixing layer is changed by spin electrons which are injected from the source and diffused by the transmission channel.
Abstract translation: 本发明涉及一种横向纺丝装置。 横向自旋装置包括：形成在基板上的传输通道; 形成在传输信道上的源; 以及包括形成在传输通道上的无漏极层，漏极中间层和漏极固定层的漏极。 在漏极中，针对漏极固定层的无漏极层的磁方向由从源极注入并由传输沟道扩散的自旋电子改变。
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公开(公告)号：KR101021899B1
公开(公告)日：2011-03-18
申请号：KR1020090011125
申请日：2009-02-11
Applicant: 한국과학기술연구원
Abstract: 본 발명은 1×10
-9 torr이하의 초진공상태에서 반도체 기판상에 금속 및 비금속 원소를 주입하여, 기판의 밴드 갭보다 큰 밴드 갭을 갖는 반-양자구조물을 자발 형성하는 방법을 개시한다. 본 발명에 의하면, 기존의 양자구조와 전기적 특성을 반대로 하는 반-양자구조물을 별도의 식각공정 없이 자발 형성할 수 있으므로, 반-양자구조물의 생산성을 향상시킬 수 있다. 또한 기판의 온도와 비금속 원소의 주입량을 변화시킴으로써, 반-양자구조물의 크기 및 형태와 밀도를 용이하게 조절할 수 있다. 따라서, 다양한 전기특성을 갖는 반-양자구조물을 제공할 수 있다.
자발 형성, 반-양자구조물, 밴드 갭, 화합물 반도체-
公开(公告)号：KR1020100028727A
公开(公告)日：2010-03-15
申请号：KR1020080087586
申请日：2008-09-05
Applicant: 한국과학기술연구원
IPC: H01L29/78
CPC classification number: H01L29/66984
Abstract: PURPOSE: A spin transistor with enhanced spin injection efficiency is provided improve the spin injection efficiency into a semiconductor channel from a ferromagnetic material by using a MgO tunneling film/ semiconductor lamination structure. CONSTITUTION: A spin transistor(10) comprises a semiconductor substrate(12), a ferromagnetic material source(11), a ferromagnetic material drain(13), a gate electrode(14), and a MgO tunneling film or the organic tunneling film(23). The semiconductor substrate comprises a channel layer(7). The spin-polarized electronic is passed through the channel layer. The ferromagnetic material source implants the electronics spin-polarized to the channel layer. The ferromagnetic material drain detects the spin of the electronics passing through the channel layer. The gate electrode is formed between the source and the drain. A gate voltage is applied to the gate electrode.
Abstract translation: 目的：提供自旋注入效率提高的自旋晶体管通过使用MgO隧道膜/半导体层压结构，提高了从铁磁材料的半导体通道中的自旋注入效率。 构造：自旋晶体管（10）包括半导体衬底（12），铁磁材料源（11），铁磁材料漏极（13），栅电极（14）和MgO隧穿膜或有机隧穿膜 23）。 半导体衬底包括沟道层（7）。 自旋极化电子通过沟道层。 铁磁材料源将电子自旋极化注入沟道层。 铁磁材料漏极检测穿过沟道层的电子器件的旋转。 栅电极形成在源极和漏极之间。 栅极电压施加到栅电极。
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公开(公告)号：KR1020090036281A
公开(公告)日：2009-04-14
申请号：KR1020070101363
申请日：2007-10-09
Applicant: 한국과학기술연구원
IPC: B82B1/00 , H01L21/027 , B82Y25/00
CPC classification number: H01L21/0274 , B82B1/00 , B82Y25/00
Abstract: A magnetic-nanoparticles/magnetic-semiconductors hybrid type spin device is provided to diversify resistance of magnetic semiconductor by controlling an electron spin property according to a localized and uneven magnetic field. A magnetic-nanoparticles/magnetic-semiconductors hybrid type spin device comprises: a magnetic semi-conductor thin film formed on a substrate; a conductive channel(11) formed on the magnetic semi-conductor thin film; an insulating layer(12) formed on the conductive channel; an electrical connection terminal formed by removing some parts of the insulating layer; and a magnetic-nanoparticles array(13) formed on the conductive channel. The magnetic semi-conductor thin film represents a single crystal thin film which has thickness of 10-1000 nanometers and shows semiconductor and ferromagnetic characteristics.
Abstract translation: 提供磁 - 纳米颗粒/磁半混合型自旋装置，通过根据局部和不均匀的磁场控制电子自旋特性来使磁半导体的电阻分散。 磁性纳米颗粒/磁性半导体混合型自旋装置包括：形成在基板上的磁性半导体薄膜; 形成在所述磁性半导体薄膜上的导电沟道（11）; 形成在所述导电通道上的绝缘层（12） 通过去除所述绝缘层的一些部分而形成的电连接端子; 和形成在导电通道上的磁 - 纳米颗粒阵列（13）。 磁性半导体薄膜表示厚度为10-1000纳米的单晶薄膜，具有半导体和铁磁特性。
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公开(公告)号：KR100855105B1
公开(公告)日：2008-08-29
申请号：KR1020070058532
申请日：2007-06-14
Applicant: 한국과학기술연구원
IPC: H01L27/105 , H01L29/82
CPC classification number: G11C11/16 , H01L29/20 , H01L29/66984
Abstract: A spin transistor using perpendicular magnetization is provided to easily miniaturize a spin transistor while enabling resistance adjustment caused by a gate by forming a ferromagnetic source/drain whose magnetization direction is perpendicular to the upper surface of a channel layer. A channel layer(7) is formed in a semiconductor substrate(10). A ferromagnetic source(22) and a ferromagnetic drain(23) are disposed on the semiconductor substrate, separated from each other and magnetized in a direction perpendicular to the upper surface of the channel layer. A gate(15) is formed on the semiconductor substrate between the source and the drain, adjusting the spin direction of electrons passing through the channel layer. Spin-polarized electrons are implanted from the source to the channel layer, and the implanted electrons pass through the channel layer and are implanted into the drain. When the electron passes through the channel layer, the spin of the electron processes according to the voltage of the gate by a spin-orbit coupling inducing magnetic field(14). The magnetization direction of the source and the drain is uniformly fixed during an on-and-off operation. In the source and the drain, a ferromagnetic thin film and a non-magnetic thin film can be stacked alternately and repeatedly in a direction perpendicular to the upper surface of the channel layer.
Abstract translation: 提供使用垂直磁化的自旋晶体管，以通过形成其磁化方向垂直于沟道层的上表面的铁磁源极/漏极实现由栅极引起的电阻调节，从而容易地使自旋晶体管小型化。 在半导体衬底（10）中形成沟道层（7）。 铁氧体源（22）和铁磁性漏极（23）设置在半导体衬底上，彼此分离并在与沟道层的上表面垂直的方向上磁化。 在源极和漏极之间的半导体衬底上形成栅极（15），调整通过沟道层的电子的自旋方向。 自旋极化电子从源极注入到沟道层，并且注入的电子通过沟道层并且被注入到漏极中。 当电子通过沟道层时，电子自旋根据栅极的电压通过自旋 - 轨道耦合诱导磁场进行处理（14）。 源极和漏极的磁化方向在开 - 关操作期间均匀地固定。 在源极和漏极中，铁磁薄膜和非磁性薄膜可以在与沟道层的上表面垂直的方向上交替重复堆叠。
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