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公开(公告)号：KR1020140022183A
公开(公告)日：2014-02-24
申请号：KR1020120088405
申请日：2012-08-13
Applicant: 한국과학기술원
IPC: G01T1/02
Abstract: The present invention relates to an electronic radiation personal dosimeter using an SiPM. The purpose is to provide an electronic radiation exposure personal dosimeter capable of reducing manufacturing costs by manufacturing it through a CMOS process by easily measuring radiation in a low dose environment. The invention includes a metal filter, an SiPM generating an electron-hole pair by radiation passing through the metal filter, moving an electron to a cathode side and moving a hole to an anode side using high voltage corresponding to reverse bias, and forming electron amplification, a pre-amplifier outputting a signal by a charge inputted from the amplification of the SiPM as an analog signal and amplifying it at the same time, an SCA outputting a digital pulse when an analog voltage signal inputted from the pre-amplifier has an amplitude between a low level discriminator and an upper level discriminator, a central processing part storing the number of digital pulses by receiving the pulses outputted from the SCA for a predetermined time and multiplying the number of the pulses by a personal dose value stored in the memory, and a read-only memory storing a personal dose value that radiation reaches per a digital pulse and delivering the value to the central processing part. [Reference numerals] (100) Display part; (20) Metal filter; (50) Pre-amplifier; (70) Central processing part; (80) Memory; (90) Read-only memory
Abstract translation: 本发明涉及一种使用SiPM的电子辐射个人剂量计。 其目的是提供一种能够通过在低剂量环境中容易地测量辐射的CMOS工艺制造它来降低制造成本的电子辐射照射个人剂量计。 本发明包括金属过滤器，通过辐射穿过金属过滤器产生电子 - 空穴对的SiPM，将电子移动到阴极侧，并使用对应于反向偏压的高电压将空穴移动到阳极侧，并且形成电子放大 前置放大器通过从SiPM的放大输入的电荷作为模拟信号输出信号并同时放大信号;当从前置放大器输入的模拟电压信号具有振幅时，SCA输出数字脉冲 在低电平鉴别器和高电平鉴别器之间，中央处理部分通过接收从SCA输出的脉冲达预定时间并存储存储在存储器中的个人剂量值来存储数字脉冲数， 以及只读存储器，其存储每个数字脉冲辐射达到的个人剂量值，并将该值传送给中央处理部件。 （附图标记）（100）显示部; （20）金属过滤器; （50）前置放大器; （70）中央处理部分; （80）记忆; （90）只读存储器
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公开(公告)号：KR1020130102189A
公开(公告)日：2013-09-17
申请号：KR1020120023213
申请日：2012-03-07
Applicant: 한국과학기술원
IPC: H04N5/3745
CPC classification number: H04N5/3745 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14643
Abstract: PURPOSE: An image sensing device implementing a pixel with two different type transistors is provided to output an output signal of a photo diode to a comparator through two different type transistors, thereby reducing the number of column lines. CONSTITUTION: An image sensing device comprises a pixel (110) to output an output signal of a photo diode (PD) through first type transistors (MN1, MN2) and a second type transistor (MP); a comparator (121) to compare the output signal to a reference signal; and memories (123,124) to stores an output size based on a result of the comparison. The pixel is a heterogeneous 3-Tr pixel and constituted with the PD, two N-channel metal-oxide semiconductors (N-MOS), and one P-channel metal-oxide semiconductor (P-MOS). The 3-Tr pixel outputs the output signal of the PD through the two N-MOSs and the one P-MOS. [Reference numerals] (123) Memory 1; (124) Memory 2; (125) Counter
Abstract translation: 目的：提供实现具有两种不同类型晶体管的像素的图像感测装置，以通过两种不同类型的晶体管将光电二极管的输出信号输出到比较器，从而减少列线数量。 构成：图像感测装置包括通过第一类型晶体管（MN1，MN2）和第二类型晶体管（MP）输出光电二极管（PD）的输出信号的像素（110）。 比较器（121），用于将输出信号与参考信号进行比较; 和存储器（123,124），用于存储基于比较结果的输出大小。 像素是异质3-Tr像素，由PD，两个N沟道金属氧化物半导体（N-MOS）和一个P沟道金属氧化物半导体（P-MOS）构成。 3-Tr像素通过两个N-MOS和一个P-MOS输出PD的输出信号。 （附图标记）（123）存储器1; （124）存储器2; （125）计数器
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公开(公告)号：KR1020120124559A
公开(公告)日：2012-11-14
申请号：KR1020110042265
申请日：2011-05-04
Applicant: 한국과학기술원
Abstract: PURPOSE: A method for forming a trench guard ring of a silicon photomultiplier and the silicon photomultiplier are provided to prevent a dark count phenomenon by suppressing the current leakage between avalanche photodiodes. CONSTITUTION: A P-type epitaxial layer(120) is formed on a silicon substrate(110). A respective P-type conductive layer(130) is formed on the P-type epitaxial layer. An oxide film is formed on the P-type epitaxial layer. A silicon nitride film is formed on the oxide film. A photoresist is spread on the silicon nitride film.
Abstract translation: 目的：提供一种形成硅光电倍增管的沟槽保护环的方法和硅光电倍增管，以通过抑制雪崩光电二极管之间的电流泄漏来防止暗计数现象。 构成：在硅衬底（110）上形成P型外延层（120）。 在P型外延层上形成相应的P型导电层（130）。 在P型外延层上形成氧化膜。 在氧化膜上形成氮化硅膜。 光致抗蚀剂铺展在氮化硅膜上。
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公开(公告)号：KR1020110131008A
公开(公告)日：2011-12-06
申请号：KR1020100050607
申请日：2010-05-28
Applicant: 한국과학기술원
IPC: H01L31/101
CPC classification number: H01L31/10 , H01L31/047 , H01L31/06 , H01L31/18
Abstract: PURPOSE: A silicon photomultiplier with a backward light-receiving structure, a manufacturing method thereof, and a radiation detector using the same are provided to enhance the light detection efficiency of a gamma-ray detector by increasing a fill factor by broadening an active area which reacts to incident visible light. CONSTITUTION: A third insulation layer(183) is formed at the upper part of a second insulation layer(182). An MIM(Metal-Insulator-Metal) capacitor(300) is formed in the third insulation layer. A second line electrode pattern(420) is formed at the upper part of the third insulation layer. The second line electrode pattern interlinks a quenching resistance(200) and the MIM capacitor which are formed in the upper part of a first insulation layer(181). The MIM capacitor absorbs a surplus voltage when avalanche breakdown occurs.
Abstract translation: 目的：提供具有反向光接收结构的硅光电倍增管及其制造方法和使用该光电倍增管的辐射检测器，以通过扩大有效面积来增加填充因子来增强伽马射线检测器的光检测效率， 对入射的可见光进行反应。 构成：在第二绝缘层（182）的上部形成第三绝缘层（183）。 在第三绝缘层中形成MIM（金属 - 绝缘体 - 金属）电容器（300）。 第二线电极图案（420）形成在第三绝缘层的上部。 第二线电极图形与在第一绝缘层（181）的上部形成的淬火电阻（200）和MIM电容器相互连接。 当发生雪崩击穿时，MIM电容吸收剩余电压。
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公开(公告)号：KR1020090129123A
公开(公告)日：2009-12-16
申请号：KR1020080055226
申请日：2008-06-12
Applicant: 한국과학기술원
IPC: H01L31/09
CPC classification number: H01L31/085 , H01L31/0543 , H01L31/0547 , H01L31/06
Abstract: PURPOSE: A silicon photomultiplier with improved photo-detecting efficiency and gamma radiation detector comprising the same are provided to minimize light on a dead region of a visible light generated from a scintillator by multi layer polysilicon resistance. CONSTITUTION: In a device, a metal line(310) is formed in each micro cell(320). A polysilicon resistor(340) for quenching is connected to the metal line. A p+ conductive type is formed in the lowermost layer of the semiconductor substrate. The epitaxial layer of the p- conductive type is formed on the semiconductor substrate of the p+ conductive type. A p-region of the conductive type is doped in the epitaxial layer. The n+ domain of the conductive type is formed on the p region of the conductive type. An insulating layer is formed on the n+ domain of the conductive type and epitaxial layer.
Abstract translation: 目的：提供具有改进的光检测效率的硅光电倍增管和包含该光电探测效率的伽马辐射检测器，以通过多层多晶硅电阻使闪烁体产生的可见光的死区的光最小化。 构成：在器件中，在每个微电池（320）中形成金属线（310）。 用于淬火的多晶硅电阻器（340）连接到金属线。 在半导体衬底的最下层形成p +导电型。 p导电型的外延层形成在p +导电型的半导体衬底上。 导电类型的p区被掺杂在外延层中。 导电类型的n +区形成在导电类型的p区上。 在导电型和外延层的n +畴上形成绝缘层。
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Patent Agency Ranking
公开(公告)号：KR101897606B1
公开(公告)日：2018-09-12
申请号：KR1020160182994
申请日：2016-12-29
Applicant: 한국과학기술원
Abstract: 대면적센서, 상기대면적센서위측면에픽셀화되어배치된복수개의섬광체를포함하는섬광체어레이, 및상기복수개의섬광체각각의일 면에상기섬광체당 한개씩부착되는소면적센서를포함하며, 상기섬광체어레이에접촉되는상기대면적센서의면적은상기섬광체어레이의면적보다작도록되어있는, 양전자방출단층영상장치용검출기를공개한다.
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公开(公告)号：KR101838951B1
公开(公告)日：2018-03-15
申请号：KR1020170016209
申请日：2017-02-06
Applicant: 한국과학기술원
IPC: G06T3/40
CPC classification number: G06T3/4076 , G06T2207/10116 , G06T2207/20016 , G06T2207/20221 , G06T2210/41
Abstract: 영상의공간해상도증가장치및 방법이개시된다. 본발명은, 대상객체의이동전후에에너지노출(energy exposure)을달리하여획득한영상을토대로최종영상을획득한다. 본발명에따르면, 픽셀안에복수개의비교기를두지않아도, 즉비교기를증가하지않아도영상의공간해상도를증가시키며에너지정보를획득할수 있고, 비교기가증가되지않기때문에소모되는파워를줄일수 있으며, 디텍터픽셀면적의증가없이에너지정보를획득할수 있다.
Abstract translation: 公开了一种用于增加图像的空间分辨率的设备和方法。 本发明基于通过在目标物体移动之前和之后的不同能量曝光获得的图像来获取最终图像。 根据本发明，由于不需要在像素中放置多个比较器，即增加图像的空间分辨率并获取能量信息而不增加比较器，所以可以减少功耗， 能量信息可以在不增加面积的情况下获得。
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公开(公告)号：KR101818654B1
公开(公告)日：2018-01-16
申请号：KR1020150185327
申请日：2015-12-23
Applicant: 한국과학기술원
Abstract: 본발명은내시경프로브의케이블단부에배치되며, 병변의해부학적위치를파악하기위한영상카메라; 및병변의생화학적위치를파악하기위한감마선계측센서;를포함하는, 내시경기반융합의료영상기기를제공한다.
Abstract translation: 内窥镜探头技术领域本发明涉及一种内窥镜探头，该内窥镜探头包括：设置在内窥镜探头的电缆端的摄像机，用于检测病变的解剖位置; 以及用于检测病变的生物化学位置的伽马射线测量传感器。
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公开(公告)号：KR1020180002368A
公开(公告)日：2018-01-08
申请号：KR1020160081806
申请日：2016-06-29
Applicant: 한국과학기술원
CPC classification number: H04N5/345 , H04N5/332 , H04N5/3456 , H04N5/35563
Abstract: 픽셀별적용필터의차이에기반하는이미지생성방법및 이를수행하는장치들이개시된다. 일실시예에따른엑스선이미지센서는엑스선이입사되는하나이상의픽셀을포함하는픽셀어레이를포함하고, 상기픽셀은각각의필터의두께및 물질중에서적어도하나가상이하게형성되는복수의서브픽셀들을포함한다.
Abstract translation: 公开了一种基于逐像素应用滤波器的差异的图像生成方法和用于执行该方法的设备。 根据示例性实施例的像素，其包括X射线图像传感器：像素阵列，其包括至少一个像素的x射线入射包括多个子像素的至少一个虚拟以形成在各过滤器的厚度和材料，该材料 。
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公开(公告)号：KR101762431B1
公开(公告)日：2017-07-28
申请号：KR1020150184020
申请日：2015-12-22
Applicant: 한국과학기술원
IPC: H01L31/107 , H01L31/0216 , G01J1/04 , G01J1/44
Abstract: 크로스톡현상을방지할수 있는실리콘광전자증배센서가제공된다. 본발명의일 실시예에따른실리콘광전자증배센서는복수개의가이거모드아발란치포토다이오드(Geiger mode avalanche photodiode; GAPD) 구조체; 상기가이거모드아발란치포토다이오드구조체상의 IC 기판; 및하나의가이거모드아발란치포토다이오드구조체에서발생하는 2차광자가인접한가이거모드아발란치포토다이오드구조체로이동하는것을차단하도록, 상기복수개의가이거모드아발란치포토다이오드구조체각각과상기 IC 기판사이에개재되는차단막;을포함한다.
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