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    전기적 혼신이 감소된 광송수신기
    11.
    发明公开
    전기적 혼신이 감소된 광송수신기 无效
    用于减少CROSSTALK的光学追踪器

    公开(公告)号：KR1020050025387A

    公开(公告)日：2005-03-14

    申请号：KR1020030062417

    申请日：2003-09-06

    Applicant: 한국전자통신연구원

    Inventor： 김성일 ,  엄용성 ,  김종덕 ,  최광성 ,  이종현 ,  윤호경 ,  최병석 ,  문종태

    IPC: G02B6/42

    CPC classification number: H04B10/43

    Abstract: An optical transceiver is provided to improve receiving quality by reducing crosstalk between optical receiving and transmitting elements on a silicon substrate using a dummy ground line formed on the substrate. An operation transceiver includes a photoelectric transducer and an optical signal transfer unit. The photoelectric transducer is disposed on a substrate and includes a light transmitting device(2210), a high speed signal line(2220), and a bias line(2230) for the light transmitting device. The light transmitting device converts an electrical signal to an optical signal. A light receiving device(2260), a high speed signal line(2270), and a bias line(2280) for the light receiving device are also included in the photoelectric transducer. The light receiving device converts the optical signal to an electrical signal. A first dummy ground line(2290) is adjacent to the high speed signal line of the light transmitting device. A second dummy ground line(2295) is adjacent to the high speed signal line of the light receiving device. The optical signal transfer unit is connected to the photoelectric transducer and delivers the received optical signal to the light receiving device. The optical signal from the light transmitting device is transferred to an optical fiber by the optical signal transfer unit.

    Abstract translation: 提供光收发器以通过使用形成在基板上的虚拟接地线减少硅衬底上的光接收和发射元件之间的串扰来提高接收质量。 操作收发器包括光电换能器和光信号传送单元。 光电传感器设置在基板上，包括用于光发射装置的光发射装置（2210），高速信号线（2220）和偏置线（2230）。 光发送装置将电信号转换为光信号。 光接收装置中还包括光接收装置（2260），高速信号线（2270）和用于光接收装置的偏置线（2280）。 光接收装置将光信号转换为电信号。 第一伪接地线（2290）与光发射装置的高速信号线相邻。 第二伪接地线（2295）与光接收装置的高速信号线相邻。 光信号传送单元连接到光电传感器并将接收到的光信号传送到光接收装置。 来自光发送装置的光信号由光信号传送单元传送到光纤。

    Ａｕ－Ｓｎ계 솔더층 및 솔더범프 제조 방법
    12.
    发明公开
    Ａｕ－Ｓｎ계 솔더층 및 솔더범프 제조 방법 有权
    制备Au-Sn合金焊锡层和Au-Sn合金焊膏的方法

    公开(公告)号：KR1020040005238A

    公开(公告)日：2004-01-16

    申请号：KR1020020039726

    申请日：2002-07-09

    Applicant: 한국전자통신연구원

    Inventor： 문종태 ,  이종현 ,  박흥우

    IPC: H01L21/60

    CPC classification number: H01L24/27 ,  H01L2224/11 ,  H01L2224/1308 ,  H01L2224/2908 ,  H01L2924/00012

    Abstract: PURPOSE: A method for fabricating an Au-Sn solder layer and an Au-Sn solder bump is provided to simplify a fabrication process and reduce a manufacturing cost by depositing an Au layer and an Sn layer and performing a heat treatment process. CONSTITUTION: An Au/Sn laminating structure(70) is formed by depositing Au and Sn on a metallic substance. The Au/Sn laminating structure(70) is heated under the temperature of 280 degrees centigrade. The alloy of Sn and Au is formed by using the liquefied Sn and a solid state of Au. An Au/Sn/Au laminating structure is formed by depositing Au and Sn on the metal substance and depositing Au thereon. The Au/Sn/Au laminating structure is heated under the temperature of 280 degrees centigrade. The alloy of Sn and Au is formed by using the liquefied Sn and the solid state of Au.

    Abstract translation: 目的：提供一种用于制造Au-Sn焊料层和Au-Sn焊料凸块的方法，以通过沉积Au层和Sn层并进行热处理工艺来简化制造工艺并降低制造成本。 构成：通过在金属物质上沉积Au和Sn来形成Au / Sn层压结构（70）。 Au / Sn层压结构（70）在280摄氏度的温度下被加热。 Sn和Au的合金通过使用液化的Sn和Au的固态形成。 通过在金属物质上沉积Au和Sn并在其上沉积Au来形成Au / Sn / Au层压结构。 Au / Sn / Au层压结构在280摄氏度的温度下加热。 Sn和Au的合金通过使用液化的Sn和Au的固态形成。

    하부 인덕터를 포함하는 실리콘 인터포저
    14.
    发明公开
    하부 인덕터를 포함하는 실리콘 인터포저 无效
    硅离子包括背电感器

    公开(公告)号：KR1020130037609A

    公开(公告)日：2013-04-16

    申请号：KR1020110102108

    申请日：2011-10-06

    Applicant: 한국전자통신연구원

    Inventor： 배현철 ,  최광성 ,  문종태 ,  박종문

    IPC: H01L23/12 ,  H01L27/02 ,  H01L23/58

    CPC classification number: H01L27/08 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5227 ,  H01L27/0694 ,  H01L2924/0002 ,  H01L2924/19042 ,  H01L2924/00

    Abstract: PURPOSE: A silicon interposer including a lower inductor is provided to form an inductor in the upper and the lower surface of a silicon substrate, thereby reducing the total area of a semiconductor package. CONSTITUTION: An upper inductor layer is formed in the upper part of a silicon substrate(201). The upper inductor layer includes a first upper insulating layer(203), a first upper metal layer(205), a second upper metal layer(207), a second upper insulating layer(209), and a first via(211). A lower inductor layer is formed in the lower part of the silicon substrate. The lower inductor layer includes a first lower insulating layer(213), a first lower metal layer(215), a second lower metal layer(217), a second lower insulating layer(219), and a second via(221). A through silicon via(301) electrically connects the upper inductor and the lower inductor.

    Abstract translation: 目的：提供包括下电感器的硅插入器以在硅衬底的上表面和下表面中形成电感器，从而减少半导体封装的总面积。 构成：在硅衬底（201）的上部形成上电感层。 上电感层包括第一上绝缘层（203），第一上金属层（205），第二上金属层（207），第二上绝缘层（209）和第一通孔（211）。 在硅衬底的下部形成有较低的电感层。 下电感层包括第一下绝缘层（213），第一下金属层（215），第二下金属层（217），第二下绝缘层（219）和第二通孔（221）。 贯通硅通孔（301）电连接上部电感器和下部电感器。

    압전 마이크로 에너지 수확기 및 이의 제조 방법
    17.
    发明公开
    압전 마이크로 에너지 수확기 및 이의 제조 방법 有权
    微能收割机及其制造方法

    公开(公告)号：KR1020120070040A

    公开(公告)日：2012-06-29

    申请号：KR1020100131434

    申请日：2010-12-21

    Applicant: 한국전자통신연구원

    Inventor： 전치훈 ,  고상춘 ,  문종태

    IPC: H02N2/18 ,  H01L41/04

    CPC classification number: H01L41/29 ,  H01L41/1136 ,  H01L41/31 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H02N2/188 ,  Y10T29/42 ,  H02N2/00 ,  H01L41/04 ,  H02N2/18

    Abstract: PURPOSE: A piezoelectric micro energy harvester and a manufacturing method thereof are provided to generate power by converting mechanical energy into electric energy. CONSTITUTION: A plurality of cavities(116) are formed in one region of a substrate(101) with preset depth and width. A plurality of support units support structures formed on the substrate. A plurality of electrode pads(Ec,Es) transmit a signal to the outside. A plurality of electrode units(114) collect electric energy generated by a piezoelectric layer(130) and includes a central electrode unit(114a) and a lateral electrode unit(114b).

    Abstract translation: 目的：提供一种压电微能量收割机及其制造方法，通过将机械能转化成电能来发电。 构成：多个空腔（116）形成在具有预设深度和宽度的基板（101）的一个区域中。 多个支撑单元支撑形成在基板上的结构。 多个电极焊盘（Ec，Es）将信号发送到外部。 多个电极单元（114）收集由压电层（130）产生的电能，并且包括中心电极单元（114a）和横向电极单元（114b）。

    엘티씨씨 인덕터를 포함하는 전자 장치
    18.
    发明公开
    엘티씨씨 인덕터를 포함하는 전자 장치 失效
    包含LTCC电感器的电子器件

    公开(公告)号：KR1020110008737A

    公开(公告)日：2011-01-27

    申请号：KR1020090066230

    申请日：2009-07-21

    Applicant: 한국전자통신연구원

    Inventor： 배현철 ,  최광성 ,  엄용성 ,  문종태 ,  주무정 ,  이종현

    IPC: H01L23/15 ,  H01L21/48

    CPC classification number: H01F17/0013 ,  H01F2017/002 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01L2924/19107 ,  H01L2924/00014

    Abstract: PURPOSE: An electronic device comprising an LTCC inductor is provided to obtain a magnetism resonance frequency property by forming a spacer or an air cavity between an LTCC inductor and a substrate. CONSTITUTION: An LTCC inductor comprises a first seat(110), a second sheet(120), and a via. The first seat is provided on a substrate and comprises a first conductive pattern(114). The first seat is provided on the first sheet and comprises a second conductive pattern. The via electrically interlinks a first conductive pattern with a second conductive pattern. A spacer is provided under the first sheet and forms an air gap between the substrate and the first sheet. The first conductive pattern is exposed form the bottom of the first seat.

    Abstract translation: 目的：提供一种包括LTCC电感器的电子设备，通过在LTCC电感器和衬底之间形成间隔物或空气腔来获得磁共振频率特性。 构成：LTCC电感器包括第一座（110），第二片（120）和通孔。 第一座位设置在基底上并且包括第一导电图案（114）。 第一座椅设置在第一片材上并且包括第二导电图案。 通孔将第一导电图案与第二导电图案电连接。 间隔件设置在第一片下方，并在基片和第一片之间形成气隙。 第一导电图案从第一座的底部露出。

    수직 커넥터, 이를 구비한 반도체 패키지, 및 이들의 제조방법
    19.
    发明授权
    수직 커넥터, 이를 구비한 반도체 패키지, 및 이들의 제조방법 失效
    垂直连接器，具有垂直连接器的半导体封装和用于制造垂直连接器和半导体封装的方法

    公开(公告)号：KR100991744B1

    公开(公告)日：2010-11-04

    申请号：KR1020080086752

    申请日：2008-09-03

    Applicant: 한국전자통신연구원

    Inventor： 최광성 ,  문종태 ,  배현철 ,  전동석 ,  엄용성

    IPC: H01L23/049 ,  H01L23/48

    CPC classification number: H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/00

    Abstract: 본 발명은 수직 커넥터, 이를 구비한 반도체 패키지, 및 이들의 제조방법에 관한 것으로, 금속판들을 제공하고, 상기 금속판들 사이에 솔더볼과 고분자 수지를 포함하는 혼합물을 제공하고, 상기 솔더볼을 용융시켜 상기 금속판들 사이에 전도체 기둥을 형성하고, 상기 고분자 수지를 경화시켜 상기 전도체 기둥 사이에 절연체 기둥을 형성하고, 그리고 상기 금속판들을 제거하여 형성되는 수직 커넥터를 포함하는 것을 특징으로 한다.
    반도체, 솔더볼, 수지 커넥터, 패키지, 모듈

    조명 장치
    20.
    发明公开
    조명 장치 无效
    照明设备

    公开(公告)号：KR1020100025834A

    公开(公告)日：2010-03-10

    申请号：KR1020080084551

    申请日：2008-08-28

    Applicant: 한국전자통신연구원

    Inventor： 윤두협 ,  김성현 ,  엄용성 ,  송윤호 ,  이수재 ,  문종태 ,  임상철 ,  양용석 ,  김진식

    IPC: F21V8/00 ,  A61L9/20 ,  F21Y101/02 ,  F21W131/305

    CPC classification number: G02B6/001 ,  A61L2/10 ,  F21V2200/13 ,  F21W2131/305 ,  F21Y2115/10 ,  Y10S362/80

    Abstract: PURPOSE: A lighting device is provided to implement a linear optical source by combining an LED with a side light emission optical fiber. CONSTITUTION: A lighting device includes an LED unit(200) and a side light emission optical fiber(100). The LED unit emits the blue light with a wavelength of 320 to 450 nm, the green light with the wavelength of 480 to 530 nm, the red light with the wavelength of 600 and 700 nm, and the white light. The side light emission optical fiber is formed by an electro-spinning method and is combined with the combination surface(200a) of the LED unit. The side light emission optical fiber is made of the polymer composite material.

    Abstract translation: 目的：提供照明装置，通过将LED与侧光发射光纤组合来实现线性光源。 构成：照明装置包括LED单元（200）和侧光发射光纤（100）。 LED单元发射波长为320至450nm的蓝光，波长为480至530nm的绿光，波长为600和700nm的红光以及白光。 侧发光光纤通过电纺法形成，并与LED单元的组合表面（200a）组合。 侧光发射光纤由聚合物复合材料制成。

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