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公开(公告)号：KR1020100070907A
公开(公告)日：2010-06-28
申请号：KR1020080129649
申请日：2008-12-18
Applicant: 한국전자통신연구원
IPC: G01J5/20 , H01L31/101 , G01J1/02
Abstract: PURPOSE: A pixel for sensing infrared rays with resistance for correcting a signal, and a manufacturing method thereof are provided to effectively eliminate DC offset current by forming a correction resistor inside the pixel. CONSTITUTION: A pixel for sensing infrared rays with resistance for correcting a signal comprises a substrate(501), a bolometer assembly(510), a first metal pad(503), and a second metal pad. A signal obtaining circuit is formed inside the substrate. A correction resistor(505) and a reflective layer(507) are loaded on the substrate. The bolometer assembly is separated from the substrate and outputs a signal corresponding to infrared rays. The first and second metal pads output the signal input from the bolometer assembly to the signal obtaining circuit.
Abstract translation: 目的：提供用于感测具有用于校正信号的电阻的红外线的像素及其制造方法，以通过在像素内形成校正电阻器来有效地消除DC偏移电流。 构成：用于感测具有用于校正信号的电阻的红外线的像素包括基底（501），测辐射热计组件（510），第一金属垫（503）和第二金属垫。 在基板内形成信号获取电路。 校正电阻器（505）和反射层（507）被加载到基板上。 测辐射热计组件与基板分离并输出对应于红外线的信号。 第一和第二金属焊盘将从测辐射热计组件输入的信号输出到信号获取电路。
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公开(公告)号：KR100906152B1
公开(公告)日：2009-07-03
申请号：KR1020070126847
申请日：2007-12-07
Applicant: 한국전자통신연구원
IPC: C04B35/16 , C04B111/90
CPC classification number: G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
Abstract: 본 발명은 마이크로 볼로미터용 저항재료, 이의 제조방법 및 이를 포함한 마이크로 볼로미터에 관한 것이다. 본 발명에 따른 마이크로 볼로미터용 저항재료는 실리콘에 안티몬 또는 안티몬과 게르마늄을 혼합함으로 얻은 합금이며, 이런 저항재료는 높은 TCR을 가지며, 낮은 저항값을 나타낸다.
마이크로 볼로미터, 실리콘, 안티몬-
公开(公告)号：KR1020090059799A
公开(公告)日：2009-06-11
申请号：KR1020070126847
申请日：2007-12-07
Applicant: 한국전자통신연구원
IPC: C04B35/16 , C04B111/90
CPC classification number: G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
Abstract: A resistant material for a microbolometer and the manufacturing method thereof are provided to secure high TCR and low resistance value by adding either antimony or antimony with germanium to silicone. A method for manufacturing a resistant material for a microbolometer comprises: the first step of preparing chambers for the purpose of applying RF or DC power independently; the second step of independently introducing silicone and antimony to each chamber to manufacture an alloy; and the third step of independently applying the power to each chamber and controlling the composition of the alloy. The applied power to the chamber with silicone is 200W-300W. The applied power to the chamber with antimony is 50W-125W.
Abstract translation: 提供微电热计的耐电材料及其制造方法，以通过将锑或锑与锗加入到硅酮中来确保高TCR和低电阻值。 一种用于制造微电热计的电阻材料的方法包括：为了独立地施加RF或DC电力的目的而制备室的第一步骤; 独立地将硅和锑引入每个室以制造合金的第二步骤; 以及独立地将功率施加到每个室并控制合金的组成的第三步骤。 使用硅胶对腔室施加的功率为200W-300W。 锑室的施加功率为50W-125W。
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公开(公告)号：KR1020080052169A
公开(公告)日：2008-06-11
申请号：KR1020070040047
申请日：2007-04-24
Applicant: 한국전자통신연구원
IPC: H01L31/0248 , H01L27/14 , H01L31/0392
CPC classification number: Y02E10/50 , H01L31/09 , G01J5/0853 , H01L31/0216 , H01L31/02366 , H01L31/0392 , H01L31/186
Abstract: A bolometer is provided to reduce 1/f noise without causing deterioration of a detection circuit by using polycrystalline silicon with increased crystallization or a silicon germanium resistance layer on a substrate including a detection circuit. A detection circuit is included in a semiconductor substrate(210). A reflection layer(214) is disposed in an partial region of the surface of the semiconductor substrate. A metal pad(212) is positioned on the surface of the semiconductor substrate at both sides of the reflection layer, separated from the reflection layer. A sensor structure(230) is positioned on the semiconductor substrate, forming a space from the surface of the reflection layer by an interval of lambda/4 of the wavelength of infrared rays. The sensor structure includes a body part positioned on the reflection layer and a support arm electrically connected to the outside of the body part by the metal pad. The body part includes a polycrystalline resistance layer made of silicon or silicon germanium(Si1-xGex, x=0.2~0.5) into which polycrystalline impurities are doped. A first insulation layer(232), a resistance layer, a second insulation layer(236), an electrode(238), an adsorption layer and a third insulation layer(242) can sequentially be stacked in the body part, and the second insulation layer, the electrode and the third insulation layer can sequentially be stacked in the support arm.
Abstract translation: 提供了一种辐射热量计，以在包括检测电路的基板上使用具有增加的结晶的多晶硅或者硅锗电阻层来降低1 / f噪声而不会导致检测电路的劣化。 检测电路包括在半导体衬底（210）中。 反射层（214）设置在半导体衬底的表面的部分区域中。 金属焊盘（212）位于反射层两侧的半导体衬底的表面上，与反射层分离。 传感器结构（230）位于半导体衬底上，以红外线波长的λ/ 4的间隔从反射层的表面形成空间。 传感器结构包括位于反射层上的主体部分和通过金属垫电连接到主体部分的外部的支撑臂。 主体部分包括由多晶杂质掺杂的硅或硅锗（Si1-xGex，x = 0.2〜0.5）制成的多晶电阻层。 第一绝缘层（232），电阻层，第二绝缘层（236），电极（238），吸附层和第三绝缘层（242）可以依次堆叠在主体部分中，第二绝缘层 层，电极和第三绝缘层可以顺序地堆叠在支撑臂中。
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公开(公告)号：KR100701152B1
公开(公告)日：2007-03-28
申请号：KR1020050120164
申请日：2005-12-08
Applicant: 한국전자통신연구원
Abstract: A monolithic MEMS(Micro-Electro Mechanical System) sensor without a step and a method of fabricating the same are provided to use a quality high temperature deposited layer for an MEMS since formation of a membrane is performed before a metal wiring process of a reading circuit. In a monolithic MEMS sensor without a step, an MEMS is formed on a left side of a substrate(10) as a first region. A reading circuit(50) is formed on a right side of the substrate as a second region. The MEMS includes a protection layer(20), a membrane(40), an insulation layer(41), and a sensor electrode(60) on the substrate. The protection layer is formed of a silicon oxide layer or a silicon nitride layer. The membrane is formed on a top of the protection layer as a silicon nitride layer or a silicon oxide layer. The insulation layer is formed of a silicon oxide layer. The sensor electrode is formed of a conductive material on the insulation layer. And, a sacrificial layer burying a trench is removed by an etching path(70).
Abstract translation: 提供了没有台阶的单片MEMS（微电子机械系统）传感器及其制造方法，以使用用于MEMS的优质高温沉积层，因为在读取电路的金属布线处理之前执行膜的形成 。 在没有台阶的单片MEMS传感器中，MEMS作为第一区域形成在基板（10）的左侧。 读取电路（50）形成在基板的右侧作为第二区域。 MEMS在衬底上包括保护层（20），膜（40），绝缘层（41）和传感器电极（60）。 保护层由氧化硅层或氮化硅层形成。 膜作为氮化硅层或氧化硅层形成在保护层的顶部上。 绝缘层由氧化硅层形成。 传感器电极由绝缘层上的导电材料形成。 并且，通过蚀刻路径（70）去除埋入沟槽的牺牲层。
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Patent Agency Ranking
公开(公告)号：KR1020060056696A
公开(公告)日：2006-05-25
申请号：KR1020040095874
申请日：2004-11-22
Applicant: 한국전자통신연구원
Abstract: 본 발명은 길이/단면적 비가 큰 전도성 물질과 절연성 고분자 물질로 된 가스 센서용 복합재료 및 이를 제조하는 방법에 관한 것이다. 이와 같이 길이/단면적 비가 큰 전도성 물질을 사용함에 따라 복합재료에 첨가되는 전도성 물질의 함량을 감소시킬 수 있으면서 동시에 높은 감지 감도를 얻을 수 있다.
가스 센서, 카본 나노튜브, 감도, 분산Abstract translation: 气体传感器用复合材料及其制造方法技术领域本发明涉及一种用于气体传感器的复合材料及其制造方法，所述气体传感器用复合材料包含具有大的长/ 通过使用如上所述的具有大的长度/横截面积比的导电材料，可以减少添加到复合材料中的导电材料的含量，同时实现高灵敏度。
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公开(公告)号：KR100538996B1
公开(公告)日：2005-12-27
申请号：KR1020030039661
申请日：2003-06-19
Applicant: 한국전자통신연구원
IPC: H01L31/09
Abstract: 본 발명은 멤스(MEMS) 공정을 적용한 초전형 적외선 센서에 관한 것으로, 적외선 센서 구조체의 최상부에 위치하는 적외선 흡수층을 실리콘 산화막(SiO
2 )으로 형성하여 약 8 내지 12㎜ 대역의 적외선 파장에 대하여 뛰어난 흡수 효과를 보이고, 센서 픽셀(pixel)의 보호막 역할을 할 수 있게 한다. 또한, 적외선 흡수층, 지지아암 및 기둥을 일체형으로 형성하여 센서 구조체의 구조를 견고하게 하고, 제작 공정의 단계를 획기적으로 감소시켜 공정 수율을 높인다.-
公开(公告)号：KR100491978B1
公开(公告)日：2005-05-27
申请号：KR1020030023213
申请日：2003-04-12
Applicant: 한국전자통신연구원
IPC: H01L27/10
CPC classification number: H01L45/06 , H01L45/1226 , H01L45/126 , H01L45/144 , H01L45/1683 , H01L45/1691
Abstract: 저 전력 동작이 가능한 상 변화 메모리 소자 및 그 제조 방법을 제공한다. 본 발명의 일 관점에 따른 상변화 메모리 소자는 가열층으로 사용되는 제1전극과, 제1전극과 측방향으로 대향되는 제2전극, 및 제1전극과 제2전극의 사이에 도입되고 적어도 제1전극의 측면에 접촉하는 상변화 물질로 이루어진 메모리층을 포함하여 구성된다.
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公开(公告)号：KR1020040041262A
公开(公告)日：2004-05-17
申请号：KR1020020069434
申请日：2002-11-09
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A pixel array for a detector having a TFT(Thin Film Transistor) structure and a manufacturing method thereof are provided to be capable of preventing the attenuation of detected gas or infrared ray information in short time due to thermal conductivity. CONSTITUTION: A pixel array for a detector is provided with a semiconductor substrate(31) having an IC(Integrated Circuit) for reading, a detecting part separated from the semiconductor substrate as much as the height of an air gap, an insulating pillar(35a) for physically connecting the detecting part with the semiconductor substrate. Preferably, the pixel array further includes a protecting layer for enclosing the detecting part. Preferably, the insulating pillar and the protecting layer are made of a silicon nitride layer. Preferably, the detecting part includes a silicon layer, a gate isolating layer(38) on the silicon layer, a gate made of a detecting layer and an absorbing layer(40), a channel region(44) in the silicon layer, and a source/drain region(41a,42a) at both sides of the gate in the silicon layer.
Abstract translation: 目的：提供一种具有TFT（薄膜晶体管）结构的检测器的像素阵列及其制造方法，其能够防止由于导热性而在短时间内检测到的气体或红外线信息的衰减。 构成：用于检测器的像素阵列设置有半导体衬底（31），该半导体衬底（31）具有用于读取的IC（集成电路），与半导体衬底分开的与气隙高度相隔的检测部分，绝缘柱（35a ），用于将检测部件与半导体基板物理连接。 优选地，像素阵列还包括用于封装检测部分的保护层。 优选地，绝缘柱和保护层由氮化硅层制成。 优选地，检测部分包括硅层，硅层上的栅极隔离层（38），由检测层制成的栅极和吸收层（40），硅层中的沟道区（44）和 源极/漏极区（41a，42a），位于硅层的栅极两侧。
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公开(公告)号：KR102229145B1
公开(公告)日：2021-03-19
申请号：KR1020160011122
申请日：2016-01-29
Applicant: 한국전자통신연구원
Abstract: 투명디스플레이장치는셔터영역및 발광영역이수평으로배치되는하부패널과, 셔터영역및 발광영역을커버하며하부패널에마주하는리세스영역을포함하는상부패널과, 발광소자및 셔터소자를포함하되, 셔터소자는, 하부패널의셔터영역에순차적으로적층되는하부전극및 전기변색물질층과, 상부패널의리세스영역내에배치되는상부전극과, 전기변색물질층및 상기상부전극사이를충진하는전해질층을포함한다.
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