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    RUTHENIUM COMPOUND, THIN-FILM FORMING RAW MATERIAL, AND METHOD OF PRODUCING THIN FILM
    11.
    发明申请
    RUTHENIUM COMPOUND, THIN-FILM FORMING RAW MATERIAL, AND METHOD OF PRODUCING THIN FILM 有权

    公开(公告)号：US20220372056A1

    公开(公告)日：2022-11-24

    申请号：US17620934

    申请日：2020-06-10

    Applicant: ADEKA CORPORATION

    Inventor： Masaki ENZU ,  Masako HATASE ,  Keisuke TAKEDA

    IPC: C07F15/00 ,  C23C16/18

    Abstract: The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R1 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and “n” represents an integer from 0 to 2, provided that at least one of R1 to R12 represents the fluorine atom-containing group; where R13 to R17 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of R11 to R17 is 3 or more.

    METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING RAW MATERIAL AND METHOD OF PRODUCING THIN FILM
    13.
    发明申请
    METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING RAW MATERIAL AND METHOD OF PRODUCING THIN FILM 审中-公开

    公开(公告)号：US20200148706A1

    公开(公告)日：2020-05-14

    申请号：US16609622

    申请日：2018-05-28

    Applicant: ADEKA CORPORATION

    Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Nana OKADA ,  Akihiro NISHIDA

    IPC: C07F5/00 ,  C23C16/40 ,  C23C16/455

    Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1): (in the formula, R1 and R2 each independently represent an alkyl group having 1 to 4 carbon atoms, R3 represents an alkyl group having 2 or 3 carbon atoms, M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, a europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom, or a lutetium atom, and n represents the valence represented by M.)

    COBALT COMPOUND, THIN FILM-FORMING RAW MATERIAL, AND METHOD FOR PRODUCING THIN FILM
    15.
    发明申请
    COBALT COMPOUND, THIN FILM-FORMING RAW MATERIAL, AND METHOD FOR PRODUCING THIN FILM 审中-公开
    钴化合物，薄膜成形原料和生产薄膜的方法

    公开(公告)号：US20170050998A1

    公开(公告)日：2017-02-23

    申请号：US15306807

    申请日：2015-03-31

    Applicant: ADEKA CORPORATION

    Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

    IPC: C07F15/06 ,  C23C16/44 ,  C23C16/18

    CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

    Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

    Abstract translation: 根据本发明的钴化合物由通式（I）表示。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子的直链或支链烷基。 根据本发明的用于形成薄膜的原料含有由通式（I）表示的钴化合物。 本发明可以提供：具有低熔点并因此可以以液态运输并且可以在低温下分解并且还具有高蒸气压并因此容易蒸发的钴化合物; 以及使用钴化合物制备的用于形成薄膜的原料。

    METHOD OF PRODUCING THIN-FILM
    16.
    发明公开
    METHOD OF PRODUCING THIN-FILM 审中-公开

    公开(公告)号：US20240018655A1

    公开(公告)日：2024-01-18

    申请号：US18037206

    申请日：2021-11-16

    Applicant: ADEKA CORPORATION

    Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

    IPC: C23C16/455 ,  C07F7/00 ,  C01G27/02 ,  C23C16/40

    CPC classification number: C23C16/45553 ,  C07F7/003 ,  C01G27/02 ,  C23C16/45527 ,  C23C16/405 ,  H01L21/02181

    Abstract: Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300° C. or more and less than 450° C. to form the thin-film containing a hafnium atom on the surface of the substrate:






    wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms.

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