公开(公告)号：WO2020187514A1

公开(公告)日：2020-09-24

申请号：PCT/EP2020/054087

申请日：2020-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TURNER, Paul, Jonathan ,  TSIATMAS, Anagnostis

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method comprises: obtaining inspection data comprising a plurality of sets of measurement data associated with a structure on the substrate or portion thereof;, for example measurement pupils; and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on the degree to which the iterative mapping converges on a solution.

公开(公告)号：WO2019149493A1

公开(公告)日：2019-08-08

申请号：PCT/EP2019/050535

申请日：2019-01-10

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  VENSELAAR, Joannes, Jitse ,  REHMAN, Samee, Ur ,  MEDVEDYEVA, Mariya, Vyacheslavivna ,  FAGGINGER AUER, Bastiaan, Onne ,  ZAAL, Martijn, Maria ,  KONTOROUPI, Thaleia

IPC: G03F7/20

Abstract: Method of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process comprises illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at either or both of a) plural positions of the radiation spot relative to the first target, and b) plural focus heights of the radiation spot. The measurement data comprises, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method comprises determining either or both of an optimal alignment and an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.

公开(公告)号：WO2019101447A1

公开(公告)日：2019-05-31

申请号：PCT/EP2018/078591

申请日：2018-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  THEEUWES, Thomas ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  SHAHRJERDY, Mir, Homayoun ,  DEN BOEF, Arie, Jeffrey ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：WO2019048216A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/072305

申请日：2018-08-17

Applicant: ASML NETHERLANDS B.V.

Inventor： FAGGINGER AUER, Bastiaan, Onne ,  HINNEN, Paul, Christiaan ,  CRAMER, Hugo, Augustinus, Joseph ,  TSIATMAS, Anagnostis ,  MEDVEDYEVA, Mariya, Vyacheslavivna

IPC: G03F9/00 ,  G03F7/20

Abstract: Disclosed herein is a target formed on a substrate, the target comprising: an alignment structure; and a metrology structure; wherein the alignment structure comprises structures that are arranged to generate a beat pattern when the alignment structure is illuminated with source radiation. Advantageously, when the target is illuminated, the beat patterns that appear in an image of the target allow the target to be easily identified using pattern recognition techniques.

公开(公告)号：WO2017149009A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054761

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  VAN WITTEVEEN, Koen ,  ZAAL, Martijn, Maria ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

Abstract translation: 度量目标包括：布置成通过第一图案化工艺形成的第一结构; 以及布置成通过第二图案化工艺形成的第二结构，其中第一结构和/或第二结构不用于创建器件图案的功能方面，并且其中第一和第二结构一起形成一个或多个 单位单元，所述单位单元在标称物理配置处具有几何对称性，并且其中所述单位单元具有如下特征：由于所述第一图案化工艺中的图案布置的相对偏移，在与所述标称物理配置不同的物理配置下， 第二次构图工艺和/或其他图案化工艺，单元格中的不对称性。

公开(公告)号：WO2023025506A1

公开(公告)日：2023-03-02

申请号：PCT/EP2022/071212

申请日：2022-07-28

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DONGEN, Jeroen ,  TSIATMAS, Anagnostis ,  VERMA, Alok ,  VAN DER MEIJDEN, Vidar ,  MC NAMARA, Elliott, Gerard

IPC: G03F7/20

Abstract: Disclosed is a method for determining a measurement recipe describing measurement settings for measuring a parameter of interest from a compound structure on a substrate. The method comprises obtaining first training data relating to measurements of reference targets, the targets comprising: a parameter of interest targets, each parameter of interest target having an induced set value which is varied over said parameter of interest targets; and one or more isolated feature targets, each comprising repetitions of one or more features. Second training data is obtained comprising compound structure measurement signals obtained from measurement of one or more instances of said compound structure, One or more machine learning models are trained using said first training data and second training data to infer a value for the parameter of interest from a measurement signal related to said compound structure corrected for a feature asymmetry contribution.

公开(公告)号：WO2019201697A1

公开(公告)日：2019-10-24

申请号：PCT/EP2019/059049

申请日：2019-04-10

Applicant: ASML NETHERLANDS B.V.

Inventor： REHMAN, Samee, Ur ,  TSIATMAS, Anagnostis ,  TARABRIN, Sergey ,  VENSELAAR, Joannes, Jitse ,  MEDVEDYEVA, Mariya, Vyacheslavivna ,  ONOSE, Alexandru

IPC: G03F7/20

Abstract: Methods of determining a value of a parameter of interest are disclosed. In one arrangement, a symmetric component and an asymmetric component of a detected pupil representation from illuminating a target are derived. A first metric characterizing the symmetric component and a second metric characterizing the asymmetric component vary non-monotonically as a function of the parameter of interest over a reference range of values of the parameter of interest. A combination of the derived symmetric component and the derived asymmetric component are used to identify a correct value from a plurality of candidate values of the parameter of interest.

公开(公告)号：WO2019110254A1

公开(公告)日：2019-06-13

申请号：PCT/EP2018/081224

申请日：2018-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： VENSELAAR, Joannes, Jitse ,  TSIATMAS, Anagnostis ,  REHMAN, Samee, Ur ,  HINNEN, Paul, Christiaan ,  VAESSEN, Jean-Pierre, Agnes, Henricus, Marie ,  WEISS, Nicolas, Mauricio ,  SANGUINETTI, Gonzalo, Roberto ,  ZACHAROPOULOU, Thomai ,  ZAAL, Martijn, Maria

IPC: G03F7/20

Abstract: The disclosure relates to determining information about a patterning process. In one method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target comprises at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further comprises: using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process; and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：WO2017149003A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054748

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

Abstract translation: 一种确定图案化过程的重叠的方法，所述方法包括：获得由单位单元的一个或多个物理实例重新引导的辐射的检测到的表示，其中所述单位单元具有标称的几何对称性 并且其中通过用辐射束照射衬底获得辐射的检测到的表示，使得衬底上的束点用单元单元的一个或多个物理实例填充; 以及根据来自检测到的辐射表示的光学特征值确定单元细胞的第一覆盖图的值与也可从相同的光学特征值获得的单元细胞的第二覆盖图的确定，其中第一覆盖图位于 与第二覆盖层不同的方向或者单元细胞部分的不同组合之间的覆盖层比第二覆盖层

公开(公告)号：WO2017148982A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054714

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

Abstract translation: 一种确定图案形成过程的重叠的方法，所述方法包括：用辐射束照射衬底，使得衬底上的束点用单元胞的一个或多个物理实例填充， 该单位晶格在重叠的标称值处具有几何对称性; 主要使用检测器检测由单位单元的一个或多个物理实例重新导向的零阶辐射; 以及由硬件计算机系统根据检测到的辐射的光学特性的值来确定单位单元的重叠的非标称值。