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公开(公告)号:WO2019149493A1
公开(公告)日:2019-08-08
申请号:PCT/EP2019/050535
申请日:2019-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor: TSIATMAS, Anagnostis , VENSELAAR, Joannes, Jitse , REHMAN, Samee, Ur , MEDVEDYEVA, Mariya, Vyacheslavivna , FAGGINGER AUER, Bastiaan, Onne , ZAAL, Martijn, Maria , KONTOROUPI, Thaleia
IPC: G03F7/20
Abstract: Method of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process comprises illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at either or both of a) plural positions of the radiation spot relative to the first target, and b) plural focus heights of the radiation spot. The measurement data comprises, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method comprises determining either or both of an optimal alignment and an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.
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公开(公告)号:WO2021122016A1
公开(公告)日:2021-06-24
申请号:PCT/EP2020/084387
申请日:2020-12-03
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: TINNEMANS, Patricius, Aloysius, Jacobus , AARTS, Igor, Matheus, Petronella , BHATTACHARYYA, Kaustuve , BRINKHOF, Ralph , KARSSEMEIJER, Leendert, Jan , KEIJ, Stefan, Carolus, Jacobus, Antonius , KOK, Haico, Victor , MATHIJSSEN, Simon, Gijsbert, Josephus , MEGENS, Henricus, Johannes, Lambertus , REHMAN, Samee, Ur
IPC: G03F7/20 , G03F9/00 , G03F7/70616 , G03F7/70633 , G03F9/7003 , G03F9/7034
Abstract: Disclosed is a metrology method relating to measurement of a structure on a substrate, said structure being subject to one or more asymmetric deviation. The method comprises obtaining at least one intensity asymmetry value relating to the asymmetric deviation, wherein the at least one intensity asymmetry value comprises a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by said structure; determining at least one phase offset value corresponding to the one or more asymmetric deviation based on said at least one intensity asymmetry value; and determining one or more measurement correction for said one or more asymmetric deviation from the one or more phase offset.
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3.
公开(公告)号:WO2020064212A1
公开(公告)日:2020-04-02
申请号:PCT/EP2019/071874
申请日:2019-08-14
Applicant: ASML NETHERLANDS B.V.
Inventor: REHMAN, Samee, Ur
Abstract: A method of determining a characteristic, such as optical response, of a physical system having a material structure, such as a thin-film multilayer stack or other optical system, has the steps: providing (1430) a neural network (1440) with its network architecture configured based on a model (1420) of scattering of radiation by the material structure along the radiation's path; training (1450) and using (1460) the neural network to determine the characteristic of the physical system. The network architecture may be configured based on the model by configuring parameters including number of units per hidden layer, number of hidden layers, layer interconnection and dropout.
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公开(公告)号:WO2022008135A1
公开(公告)日:2022-01-13
申请号:PCT/EP2021/064156
申请日:2021-05-27
Applicant: ASML NETHERLANDS B.V.
Inventor: MATHIJSSEN, Simon, Gijsbert, Josephus , TINNEMANS, Patricius, Aloysius, Jacobus , DEN BOEF, Arie, Jeffrey , BHATTACHARYYA, Kaustuve , REHMAN, Samee, Ur
Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.
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公开(公告)号:WO2020141049A1
公开(公告)日:2020-07-09
申请号:PCT/EP2019/084684
申请日:2019-12-11
Applicant: ASML NETHERLANDS B.V.
Inventor: REHMAN, Samee, Ur , TSIATMAS, Anagnostis , TARABRIN, Sergey , MC NAMARA, Elliott, Gerard , HINNEN, Paul, Christiaan
Abstract: A method to calculate a model of a metrology process including receiving a multitude of SEM measurements of a parameter of a semiconductor process, receiving a multitude of optical measurements of the parameter of a semiconductor process, determining a model of a metrology process wherein the optical measurements of the parameter of semiconductor process are mapped to the SEM measurements of the parameter of the semiconductor process using a regression algorithm.
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公开(公告)号:WO2022199958A1
公开(公告)日:2022-09-29
申请号:PCT/EP2022/054161
申请日:2022-02-18
Applicant: ASML NETHERLANDS B.V.
Inventor: REHMAN, Samee, Ur , MENCHTCHIKOV, Boris , SOCHA, Robert, John
IPC: G03F9/00
Abstract: Disclosed is a method of identifying one or more dominant asymmetry modes relating to asymmetry in an alignment mark, the method comprises obtaining alignment data relating to measurement of alignment marks on at least one substrate using a plurality of alignment conditions; identifying one or more dominant orthogonal components of said alignment data, said one or more orthogonal components comprising a number of said orthogonal components which together sufficiently describes variance in said alignment data; and determining an asymmetry mode as dominant if it corresponds to an expected asymmetry mode shape which best matches one of said dominant orthogonal components. Alternatively, the method comprises, for each known asymmetric mode: determining a sensitivity metric; and determining an asymmetry mode as dominant if said sensitivity metric is above a sensitivity threshold.
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公开(公告)号:WO2020212057A1
公开(公告)日:2020-10-22
申请号:PCT/EP2020/057401
申请日:2020-03-18
Applicant: ASML NETHERLANDS B.V.
Inventor: WERKMAN, Roy , DECKERS, David, Frans, Simon , HASTINGS, Simon, Philip, Spencer , ZIEBARTH, Jeffrey, Thomas , REHMAN, Samee, Ur , HARUTYUNYAN, Davit , LIN, Chenxi , CHENG, Yana
IPC: G03F7/20
Abstract: There is provided a method for determining a correction for an apparatus used in a process of patterning substrates, the method comprising: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model comprising at least a group-specific correction component and a common correction component.
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8.
公开(公告)号:WO2019201697A1
公开(公告)日:2019-10-24
申请号:PCT/EP2019/059049
申请日:2019-04-10
Applicant: ASML NETHERLANDS B.V.
Inventor: REHMAN, Samee, Ur , TSIATMAS, Anagnostis , TARABRIN, Sergey , VENSELAAR, Joannes, Jitse , MEDVEDYEVA, Mariya, Vyacheslavivna , ONOSE, Alexandru
IPC: G03F7/20
Abstract: Methods of determining a value of a parameter of interest are disclosed. In one arrangement, a symmetric component and an asymmetric component of a detected pupil representation from illuminating a target are derived. A first metric characterizing the symmetric component and a second metric characterizing the asymmetric component vary non-monotonically as a function of the parameter of interest over a reference range of values of the parameter of interest. A combination of the derived symmetric component and the derived asymmetric component are used to identify a correct value from a plurality of candidate values of the parameter of interest.
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公开(公告)号:WO2019110254A1
公开(公告)日:2019-06-13
申请号:PCT/EP2018/081224
申请日:2018-11-14
Applicant: ASML NETHERLANDS B.V.
Inventor: VENSELAAR, Joannes, Jitse , TSIATMAS, Anagnostis , REHMAN, Samee, Ur , HINNEN, Paul, Christiaan , VAESSEN, Jean-Pierre, Agnes, Henricus, Marie , WEISS, Nicolas, Mauricio , SANGUINETTI, Gonzalo, Roberto , ZACHAROPOULOU, Thomai , ZAAL, Martijn, Maria
IPC: G03F7/20
Abstract: The disclosure relates to determining information about a patterning process. In one method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target comprises at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further comprises: using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process; and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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