公开(公告)号：WO2013127608A2

公开(公告)日：2013-09-06

申请号：PCT/EP2013/052306

申请日：2013-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： PEETERS, Emiel ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  KOOLE, Roelof ,  VAN HEESCH, Chris ,  BRIZARD, Aurelie ,  BOOTS, Henri ,  NGUYEN, Thanh ,  YILDIRIM, Oktay

IPC: G06F7/02

CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer comprising first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition comprising a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract translation: 一种形成图案化学外延模板的方法，用于在基底表面上定向包含第一聚合物嵌段和第二聚合物嵌段的可自组装的嵌段共聚物，所述方法包括施加 底漆组合物施加到表面，所述底漆组合物包含与第一聚合物嵌段具有化学亲和力的第一聚合物部分和与第二聚合物嵌段具有化学亲和力的第二聚合物部分，选择性地暴露表面，底漆层和任何上覆层 光化辐射以提供曝光区域和未曝光区域，使曝光区域中的第一聚合物部分变得不稳定，并且从曝光区域除去不稳定的第一聚合物部分以消耗第一聚合物部分的曝光区域中的底漆层表面以形成 图案化的化学外延模板。

公开(公告)号：WO2013007442A1

公开(公告)日：2013-01-17

申请号：PCT/EP2012/060133

申请日：2012-05-30

Applicant: ASML Netherlands B.V. ,  WUISTER, Sander ,  YAKUNIN, Andrei ,  KRIVTSUN, Vladimir

Inventor： WUISTER, Sander ,  YAKUNIN, Andrei ,  KRIVTSUN, Vladimir

IPC: G03F7/004 ,  G03F7/075 ,  C08F30/08

CPC classification number: G03F7/0388 ,  C08F30/08 ,  G03F7/0043 ,  G03F7/0758 ,  G03F7/2002

Abstract: A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.

Abstract translation: 光刻工艺包括在EUV抗蚀剂材料中使用含硅聚合物或包含至少一种选自Ta，W，Re，Os，Ir，Ni，Cu或Zn的元素的化合物 光刻工艺。 在该过程中使用的EUV光的波长小于11nm，例如6.5-6.9nm。 本发明还涉及新的含硅聚合物。

公开(公告)号：WO2012031818A3

公开(公告)日：2012-03-15

申请号：PCT/EP2011/062554

申请日：2011-07-21

Applicant: ASML NETHERLANDS B.V. ,  KOOLE, Roelof ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  PEETERS, Emiel

Inventor： KOOLE, Roelof ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  PEETERS, Emiel

IPC: B81C1/00 ,  H01L21/027

Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

公开(公告)号：WO2011151109A1

公开(公告)日：2011-12-08

申请号：PCT/EP2011/056308

申请日：2011-04-20

Applicant: ASML Netherlands B.V. ,  PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

Inventor： PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

IPC: C08F293/00 ,  G03F7/00 ,  B81C1/00 ,  B82Y10/00 ,  B82Y30/00

CPC classification number: C08F293/00 ,  B05D5/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08F297/04 ,  G03F7/0002 ,  G03F7/004 ,  G03F7/165 ,  G03F7/26

Abstract: A self-assemblable polymer is disclosed, having first and second molecular configurations with the first molecular configuration has a higher Flory Huggins parameter for the self-assemblable polymer than the second molecular configuration, and the self-assemblable polymer is configurable from the first molecular configuration to the second molecular configuration, from the second molecular configuration to the first molecular configuration, or both, by the application of a stimulus. The polymer is of use in a method for providing an ordered, periodically patterned layer of the polymer on a substrate, by ordering and annealing the polymer in its second molecular configuration and setting the polymer when it is in the first molecular configuration. The second molecular configuration provides better ordering kinetics and permits annealing of defects near its order/disorder transition temperature, while the first molecular configuration, with a higher order/disorder transition temperature, provides low line edge/width roughness for the pattern formed on setting.

Abstract translation: 公开了具有第一和第二分子构型的自组装聚合物，其具有第一分子构型，其具有比第二分子构型更高的可自组装聚合物的Flory Huggins参数，并且可自组装聚合物可从第一分子构型 到第二分子构型，从第二分子构型到第一分子构型，或两者都通过施加刺激。 聚合物可用于通过在其第二分子构型中排列和退火聚合物并在聚合物处于第一分子构型时设置聚合物，从而在基底上提供聚合物的有序周期性图案化层的方法。 第二种分子结构提供更好的排序动力学，并允许在其顺序/无序转变温度附近的缺陷退火，而具有较高阶/无序转变温度的第一分子构型为设置上形成的图案提供了低的线边缘/宽度粗糙度。

公开(公告)号：WO2011107302A2

公开(公告)日：2011-09-09

申请号：PCT/EP2011/050246

申请日：2011-01-11

Applicant: ASML Netherlands B.V. ,  KRUIJT-STEGEMAN, Yvonne ,  DEN BOEF, Arie ,  JEUNINK, Andre ,  WUISTER, Sander

Inventor： KRUIJT-STEGEMAN, Yvonne ,  DEN BOEF, Arie ,  JEUNINK, Andre ,  WUISTER, Sander

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7042

Abstract: A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.

Abstract translation: 公开了一种在压印光刻设备中确定压印模板的位置的方法。 在一个实施例中，该方法包括通过扫描在该区域上的对准辐射束来照射其中期望找到对准标记的压印模板的区域，检测从该区域反射或发射的辐射的强度，以及识别对准 通过分析检测到的强度来标记。

公开(公告)号：WO2014191163A1

公开(公告)日：2014-12-04

申请号：PCT/EP2014/059097

申请日：2014-05-05

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander ,  DRUZHININA, Tamara ,  VAN MALE, Jan ,  KLEIN-WOLTERINK, Joanne ,  AMBESI, Davide

IPC: G03F7/00

CPC classification number: G06F17/5009 ,  G03F7/0002 ,  G06F17/5081 ,  G06F2217/12

Abstract: A method of determining an uncertainty in the position of a domain within a self- assembly block copolymer (BCP) feature. The method includes simulating a BCP feature, calculating a minimum energy position of a first domain within the simulated BCP feature, simulating the application of a potential that causes the position of the first domain to be displaced from the minimum energy position, simulating release of the potential back toward the minimum energy, recording a plurality of energies of the BCP feature during the release and recording at each of the plurality of energies a displacement of the first domain from the minimum energy position, calculating, from the recorded energies and recorded displacements, a probability distribution indicating a probability of the first domain being displaced from the minimum energy position, and, from the probability distribution, calculating an uncertainty in the position of the first domain within the BCP feature.

Abstract translation: 确定自组装嵌段共聚物（BCP）特征中的域的位置的不确定性的方法。 该方法包括模拟BCP特征，计算模拟BCP特征中的第一域的最小能量位置，模拟使第一域的位置从最小能量位置移位的电位的应用，模拟BCP特征的释放 在释放期间记录多个能量的BCP特征，并且在多个能量中的每一个处记录第一域从最小能量位置的位移，从记录的能量和记录的位移计算出， 指示第一域从最小能量位置移位的概率的概率分布，并且从概率分布计算BCP特征中的第一域的位置的不确定性。

公开(公告)号：WO2014139795A1

公开(公告)日：2014-09-18

申请号：PCT/EP2014/053694

申请日：2014-02-26

Applicant: ASML NETHERLANDS B.V.

Inventor： FINDERS, Jozef ,  WUISTER, Sander ,  VAN DER HEIJDEN, Eddy ,  BOOTS, Henri

IPC: B81C1/00 ,  G03F7/20

CPC classification number: H01L21/76816 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/2002 ,  G03F7/2004 ,  H01L21/02345 ,  H01L21/268 ,  H01L21/31058 ,  H01L21/31133

Abstract: A method of forming a plurality of regularly spaced lithography features, e.g. contact holes, including: providing a trench on a substrate, the trench having opposing side-walls and a base, with the side-walls having a width therebetween, wherein the trench is formed by photolithography including exposing the substrate using off-axis illumination whereby a modulation is provided to the side-walls of the trench; providing a self-assemblable block copolymer having first and second blocks in the trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in the trench, the layer having first domains of the first block and second domains of the second block; and selectively removing the first domain to form at least one regularly spaced row of lithography features having the second domain along the trench.

Abstract translation: 一种形成多个规则间隔的光刻特征的方法，例如。 接触孔，包括：在衬底上提供沟槽，所述沟槽具有相对的侧壁和底座，其中所述侧壁之间具有宽度，其中所述沟槽通过光刻形成，包括使用离轴照明曝光所述衬底，由此 向沟槽的侧壁提供调制; 提供在沟槽中具有第一和第二嵌段的自组装嵌段共聚物; 使自组装嵌段共聚物自组装成沟槽中的有序层，该层具有第一嵌段的第一区域和第二嵌段的第二区域; 以及选择性地移除所述第一区域以形成沿着所述沟槽具有所述第二结构域的至少一个规则间隔的光刻特征行。

公开(公告)号：WO2014023589A1

公开(公告)日：2014-02-13

申请号：PCT/EP2013/065824

申请日：2013-07-26

Applicant: ASML NETHERLANDS B.V.

Inventor： FINDERS, Jozef ,  DRUZHININA, Tamara ,  PEETERS, Emiel ,  WUISTER, Sander ,  VAN HEESCH, Chris ,  VAN DER HEIJDEN, Eddy ,  BOOTS, Henri

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G06F17/5009 ,  G06F17/5068

Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.

Abstract translation: 设计外延模板以将基底上的嵌段共聚物自组装成有序目标图案的方法包括提供初级外延模板设计，然后改变设计以优化图案保真度统计量，例如放置误差，相对于 通过对预测的自组装嵌段共聚物图案进行模拟和优化作为不同设计参数的函数的图案放置来实现目标图案。 除了改变设计参数以优化模式保真度统计量之外，在模拟预测模式之前还包括模板设计中的随机误差，以便在实践中补偿预期的模板不准确性。 除了设计参数的系统变化之外，在模板设计中包括一个现实的随机误差，可以改进模板设计优化，使得结果对于在实践中可能是不可避免的误差较不敏感。

公开(公告)号：WO2013152928A1

公开(公告)日：2013-10-17

申请号：PCT/EP2013/055681

申请日：2013-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander ,  BANINE, Vadim ,  FINDERS, Jozef ,  KOOLE, Roelof ,  PEETERS, Emiel ,  SINGH, Harmeet

IPC: G03F7/00

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

公开(公告)号：WO2013143813A1

公开(公告)日：2013-10-03

申请号：PCT/EP2013/054502

申请日：2013-03-06

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Harmeet ,  BANINE, Vadim ,  FINDERS, Jozef ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。