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    Lithographic apparatus, and device manufacturing method
    14.
    发明专利
    Lithographic apparatus, and device manufacturing method 有权
    LITHOGRAPHIC设备和设备制造方法

    公开(公告)号：JP2011018925A

    公开(公告)日：2011-01-27

    申请号：JP2010198845

    申请日：2010-09-06

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： BASELMANS JOHANNES JACOBUS MATHEUS ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  MERTENS JEROEN JOHANNES SOPHIA MARIA ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  STREEFKERK BOB

    IPC: H01L21/027 ,  G03F9/02

    CPC classification number: G03F9/7023 ,  G03F7/70341 ,  G03F7/70883

    Abstract: PROBLEM TO BE SOLVED: To provide a method for correcting an exposure parameter of an immersion lithographic apparatus, and to provide a device and/or a computer program product.SOLUTION: In this method, an exposure parameter is measured using measuring beams 22, 24 projected through a liquid between the projection system PL and a substrate table of the immersion lithographic apparatus, and offset is determined based on a change of a physical property influencing measurement made using the measuring beams to at least partly correct the measured exposure parameter. Also, the height of an optical element connected to liquid between the projection system and the substrate table in the immersion lithographic apparatus is measured.

    Abstract translation: 要解决的问题：提供一种用于校正浸没式光刻设备的曝光参数的方法，并提供设备和/或计算机程序产品。解决方案：在该方法中，使用测量光束22,24测量曝光参数 通过投影系统PL和浸没式光刻设备的衬底台之间的液体投影，并且基于影响使用测量光束进行的测量的物理属性的变化来确定偏移，以至少部分地校正测量的曝光参数。 此外，测量在浸没式光刻设备中连接到投影系统和基板台之间的液体的光学元件的高度。

    Lithographic apparatus, and method of manufacturing device
    16.
    发明专利
    Lithographic apparatus, and method of manufacturing device 有权
    光刻设备及其制造方法

    公开(公告)号：JP2010183099A

    公开(公告)日：2010-08-19

    申请号：JP2010088441

    申请日：2010-04-07

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： STREEFKERK BOB ,  BASELMANS JOHANNES JACOBUS MATHEUS ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  MERTENS JEROEN JOHANNES SOPHIA MARIA ,  MULKENS JOHANNES CATHARINUS HUBERTUS

    IPC: H01L21/027

    CPC classification number: G03F7/70341 ,  G03F7/70866 ,  G03F9/7026 ,  G03F9/7034

    Abstract: PROBLEM TO BE SOLVED: To prevent or reduce generation of residual liquid, for example, on a substrate and/or substrate table after exposure of the substrate, in an immersion lithographic apparatus. SOLUTION: In immersion lithography, after the exposure of the substrate is completed, a detector is used to detect the residual liquid that remains on the substrate and/or substrate table. When the residual liquid is detected, an alarm signal may be generated to instruct an operator to take measures of manual correction. When an automatic drying system is started or a drying process is already executed alternatively, the apparatus is restarted. An error code flag may be added to instruct a track unit on execution of an additional drying step such as spin drying before sintering after exposure or other processes which are likely to be affected by liquid. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 待解决的问题：在浸没式光刻设备中，为了防止或减少残留液体的产生，例如在基板和/或基板台上暴露之后。 解决方案：在浸没式光刻中，在完成基板曝光之后，使用检测器来检测残留在基板和/或基板台上的残留液体。 当检测到残留液体时，可能产生报警信号以指示操作者采取手动校正措施。 当自动干燥系统启动或干燥处理已经交替执行时，装置重启。 可以添加错误代码标志来指示轨道单元执行额外的干燥步骤，例如在暴露之后的烧结之前的旋转干燥或可能受液体影响的其它过程。 版权所有（C）2010，JPO＆INPIT

    GAS-LIQUID PHASE TRANSITION METHOD AND APPARATUS FOR CLEANING OF SURFACES IN SEMICONDUCTOR MANUFACTURING
    17.
    发明申请
    GAS-LIQUID PHASE TRANSITION METHOD AND APPARATUS FOR CLEANING OF SURFACES IN SEMICONDUCTOR MANUFACTURING 审中-公开
    气相液相转移方法及其在半导体制造过程中清洗表面的方法

    公开(公告)号：WO2012024131A2

    公开(公告)日：2012-02-23

    申请号：PCT/US2011047299

    申请日：2011-08-10

    Applicant: RASIRC INC ,  ASML NETHERLANDS BV ,  SPIEGELMAN JEFFREY J ,  HOLMES RUSSELL J ,  ALVAREZ DANIEL ,  SCACCABAROZZI LUIGI ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CASTELIJNS HENRICUS JOZEF

    Inventor： SPIEGELMAN JEFFREY J ,  HOLMES RUSSELL J ,  ALVAREZ DANIEL ,  SCACCABAROZZI LUIGI ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CASTELIJNS HENRICUS JOZEF

    IPC: B08B3/04

    CPC classification number: B08B7/0014 ,  B08B3/00 ,  B08B3/04 ,  B08B3/10 ,  B08B2230/01 ,  G03F1/24 ,  G03F1/82 ,  G03F7/16 ,  G03F7/427 ,  G03F7/70925 ,  H01L21/02052 ,  H01L21/67028

    Abstract: A method (500) for cleaning an article such as a EUV (extreme ultraviolet) lithography reticle is provided. The method includes evacuating a cleaning chamber and loading the article to be cleaned into the cleaning chamber (510); preparing the environment of the chamber (520) by connecting the cleaning chamber to a vapor source while controlling pressure in the cleaning chamber to a predetermined pressure; controlling a temperature of the article relative to a temperature of the vapor source so as to form a liquid film (530) over the article and over particles present on the article; isolating the cleaning chamber from the vapor source; evaporating the liquid film (540) by exposing the cleaning chamber to one or more condensing surfaces whose temperature is lower than that of the article, the evaporating liquid transporting at least a portion of the particles away from the article, which is then unloaded from the chamber (560). The cleaning steps (520) to (540) can be repeated (550) as desired. An electrostatic trap may be provided to capture particles released by the evaporation. The cleaning technique can be used in a lithographic apparatus and in manufacturing a device having critical surfaces, such as a wafer, a semiconductor film, or surface of an apparatus employed in the manufacture of a semiconductor device.

    Abstract translation: 提供了用于清洁诸如EUV（极紫外）光刻掩模版的物品的方法（500）。 该方法包括抽空清洁室并将待清洁的物品装载到清洁室（510）中; 通过在将清洁室中的压力控制到预定压力的同时将清洁室连接到蒸气源来准备室（520）的环境; 控制所述物品相对于所述蒸气源的温度的温度，以便在所述物品上形成液体膜（530）并且在所述物品上存在上述颗粒; 将清洁室与蒸气源隔离; 通过将清洁室暴露于温度低于物品的一个或多个冷凝表面来蒸发液体膜（540），蒸发液体将至少一部分颗粒运送到物品上，然后将其从 室（560）。 清洗步骤（520）至（540）可根据需要重复（550）。 可以提供静电捕获器来捕获通过蒸发释放的颗粒。 清洁技术可以用于光刻设备中，并且可用于制造具有临界表面的器件，例如晶片，半导体膜或用于制造半导体器件的器件的表面。

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