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    Multi-beam inspection apparatus
    12.
    发明授权
    Multi-beam inspection apparatus 有权

    公开(公告)号：US11538655B2

    公开(公告)日：2022-12-27

    申请号：US17135915

    申请日：2020-12-28

    Applicant: ASML Netherlands B.V.

    Inventor： Xuerang Hu ,  Xuedong Liu ,  Zhong-wei Chen ,  Weiming Ren

    IPC: H01J37/14 ,  H01J37/15 ,  H01J37/153 ,  H01J37/147

    Abstract: An improved source conversion unit of a charged particle beam apparatus is disclosed. The source conversion unit comprises a first micro-structure array including a plurality of micro-structures. The plurality of micro-structures is grouped into one or more groups. Corresponding electrodes of micro-structures in one group are electrically connected and driven by a driver to influence a corresponding group of beamlets. The micro-structures in one group may be single-pole structures or multi-pole structures. The micro-structures in one group have same or substantially same radial shifts from an optical axis of the apparatus. The micro-structures in one group have same or substantially same orientation angles with respect to their radial shift directions.

    Apparatus using multiple charged particle beams
    13.
    发明授权
    Apparatus using multiple charged particle beams 有权

    公开(公告)号：US11062874B2

    公开(公告)日：2021-07-13

    申请号：US16474027

    申请日：2017-12-22

    Applicant: ASML Netherlands B.V.

    Inventor： Weiming Ren ,  Xuedong Liu ,  Xuerang Hu ,  Zhong-wei Chen

    IPC: H01J37/145

    Abstract: The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.

    In-die metrology methods and systems for process control
    15.
    发明授权
    In-die metrology methods and systems for process control 有权

    公开(公告)号：US12040187B2

    公开(公告)日：2024-07-16

    申请号：US17985087

    申请日：2022-11-10

    Applicant: ASML Netherlands B.V.

    Inventor： Lingling Pu ,  Wei Fang ,  Zhong-wei Chen

    IPC: H01L21/02 ,  G03F7/00 ,  G06F30/39 ,  H01J37/147 ,  H01J37/244

    CPC classification number: H01L21/02691 ,  G03F7/70625 ,  G03F7/70633 ,  G06F30/39 ,  H01J37/1471 ,  H01J37/244

    Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

    Apparatus of plural charged particle beams
    18.
    发明授权
    Apparatus of plural charged particle beams 有权

    公开(公告)号：US11676793B2

    公开(公告)日：2023-06-13

    申请号：US16679023

    申请日：2019-11-08

    Applicant: ASML Netherlands B.V.

    Inventor： Weiming Ren ,  Xuedong Liu ,  Xuerang Hu ,  Zhong-wei Chen

    IPC: H01J37/145 ,  H01J37/26 ,  H01J37/285

    CPC classification number: H01J37/145 ,  H01J37/26 ,  H01J37/285

    Abstract: An electromagnetic compound lens may be configured to focus a charged particle beam. The compound lens may include an electrostatic lens provided on a secondary optical axis and a magnetic lens also provided on the secondary optical axis. The magnetic lens may include a permanent magnet. A charged particle optical system may include a beam separator configured to separate a plurality of beamlets of a primary charged particle beam generated by a source along a primary optical axis from secondary beams of secondary charged particles. The system may include a secondary imaging system configured to focus the secondary beams onto a detector along the secondary optical axis. The secondary imaging system may include the compound lens.

    In-die metrology methods and systems for process control
    19.
    发明授权
    In-die metrology methods and systems for process control 有权

    公开(公告)号：US11527405B2

    公开(公告)日：2022-12-13

    申请号：US16730897

    申请日：2019-12-30

    Applicant: ASML Netherlands B.V.

    Inventor： Lingling Pu ,  Wei Fang ,  Zhong-wei Chen

    IPC: H01L21/02 ,  G03F7/20 ,  G06F30/39 ,  H01J37/147 ,  H01J37/244

    Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

    Systems and methods for voltage contrast defect detection
    20.
    发明授权
    Systems and methods for voltage contrast defect detection 有权

    公开(公告)号：US11513087B2

    公开(公告)日：2022-11-29

    申请号：US17073271

    申请日：2020-10-16

    Applicant: ASML Netherlands B.V.

    Inventor： Weiming Ren ,  Xuedong Liu ,  Zhong-wei Chen ,  Xiaoyu Ji ,  Xiaoxue Chen ,  Weimin Zhou ,  Frank Nan Zhang

    IPC: G01N23/2202 ,  G01N1/44 ,  G01N23/2251

    Abstract: Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.

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