Abstract:
An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.
Abstract:
A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.
Abstract:
A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and the common conductive structure.
Abstract:
An optoelectronic system having a first optoelectronic element with a first surface; a second optoelectronic element with a second surface; an IC, with a third surface coplanar with the first surface and the second surface; an electrical connection, electrically connecting the first optoelectronic element and the IC; and a material, surrounding the first optoelectronic element, the second optoelectronic element, and the IC, and exposing the first surface, the second surface, and the third surface.
Abstract:
Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.
Abstract:
A light-emitting device includes a circuit carrier board having a short side and a long side, a plurality of light-emitting units on the circuit carrier board for emitting three or more color lights, and a light-transmitting glue layer on the circuit carrier board and covering the plurality of light-emitting units. The short side is shorter than the long side. The plurality of light-emitting units include a first light-emitting unit. The first light-emitting unit has a light exit surface, a first sidewall, and a second sidewall. The first sidewall faces the short side and has a first included angle with the light exit surface, and the second sidewall faces the long side and has a second included angle with the light exit surface. The first included angle is between 85 to 95 degrees, and the second included angle is less than 85 degrees or greater than 105 degrees.
Abstract:
This disclosure discloses a light-emitting display module display. The light-emitting display module comprises: a board; and a plurality of light-emitting diode modules arranged in an array configuration on the board; wherein one of the light-emitting diode modules comprises a plurality of encapsulated light-emitting units spaced apart from each other; and one of the encapsulated light-emitting units comprises a plurality of optoelectronic units, a first supporting, and a fence; and wherein the plurality of optoelectronic units are covered by the first supporting structure, and the fence surrounds the first supporting structure and the plurality of optoelectronic units.
Abstract:
The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package. In other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.
Abstract:
A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.
Abstract:
The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.