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    TRANSMON QUBITS WITH TRENCHED CAPACITOR STRUCTURES
    11.
    发明专利
    TRANSMON QUBITS WITH TRENCHED CAPACITOR STRUCTURES 未知

    公开(公告)号：SG11202110239YA

    公开(公告)日：2021-10-28

    申请号：SG11202110239Y

    申请日：2020-04-06

    Applicant: IBM

    Inventor： ADIGA VIVEKANANDA ,  SANDBERG MARTIN ,  CHOW JERRY ,  PAIK HANHEE

    IPC: H01L27/18 ,  G06N10/00 ,  H01L39/22 ,  H01L39/24

    Abstract: A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

    Microfabricated air bridges for quantum circuits
    14.
    发明专利
    Microfabricated air bridges for quantum circuits 未知

    公开(公告)号：AU2020423563A1

    公开(公告)日：2022-06-16

    申请号：AU2020423563

    申请日：2020-12-14

    Applicant: IBM

    Inventor： ADIGA VIVEKANANDA ,  YAN HONGWEN ,  PAPALIA JOHN ,  RATH DAVID ,  PATEL JYOTICA

    IPC: H01L39/24 ,  G06N10/00 ,  H01L27/18 ,  H01L39/14

    Abstract: A method for fabricating a bridge structure in a quantum mechanical device includes providing a substructure including a substrate having deposited thereon a layer of a first superconducting material divided into a first portion, a second portion and a third portion that are electrically insulated from each other; depositing a sacrificial layer on the substructure; electrically connecting the first portion and the second portion with a strip of a second superconducting material, the second superconducting material being different from the first superconducting material; and removing a portion of the sacrificial layer so as to form a bridge structure over the third portion between the first portion and the second portion, the bridge structure electrically connecting the first portion to the second portion while not electrically connecting the third portion to the first portion and not electrically connecting the third portion to the second portion.

    Junction fabrication method for forming qubits
    15.
    发明专利
    Junction fabrication method for forming qubits 未知

    公开(公告)号：AU2020384654A1

    公开(公告)日：2022-05-12

    申请号：AU2020384654

    申请日：2020-11-10

    Applicant: IBM

    Inventor： ADIGA VIVEKANANDA ,  WYMORE BENJAMIN ,  FOGEL KEITH ,  SANDBERG MARTIN

    IPC: H01L39/24 ,  G06N10/00 ,  H01L27/18 ,  H01L39/02 ,  H01L39/22

    Abstract: A method of making a Josephson junction for a superconducting qubit includes providing a substructure (500) having a surface with first and second trenches (306 and 308) perpendicular to each other defined therein. The method further includes evaporating a first superconducting material (700) to deposit the first superconducting material and evaporating a second superconducting material (701) to deposit the second superconducting material in the first trench to provide a first lead (710), and forming an oxidized layer (800) on the first and second superconducting materials. The method includes evaporating a third superconducting material (900) at an angle substantially perpendicular to the surface (502) of the substructure to deposit the third superconducting material in the second trench without rotating the substructure to form a second lead (910). A vertical Josephson junction is formed at the intersection of the first and second trenches electrically connected through the first lead and through the second lead.

    VERTICAL SUPERINDUCTOR DEVICE
    17.
    发明专利
    VERTICAL SUPERINDUCTOR DEVICE 未知

    公开(公告)号：SG11202109827WA

    公开(公告)日：2021-10-28

    申请号：SG11202109827W

    申请日：2020-03-25

    Applicant: IBM

    Inventor： SANDBERG MARTIN ,  ADIGA VIVEKANANDA ,  TOPALOGLU RASIT

    IPC: H01L27/18 ,  B82Y10/00 ,  G06N10/00 ,  H01L39/22 ,  H01L39/24

    Abstract: A fluxonium qubit includes a superinductor. The superinductor includes a substrate, and a first vertical stack extending in a vertical direction from a surface of the substrate. The first vertical stack includes a first Josephson junction and a second Josephson junction connected in series along the vertical direction. The superinductor includes a second vertical stack extending in a vertical direction from a surface of the substrate. The second vertical stack includes a third Josephson junction. The superinductor includes a superconducting connector connecting the first and second vertical stacks in series such that the first, second, and third Josephson junctions are connected in series. The fluxonium qubit further includes a shunted Josephson junction connected to the superinductor with superconducting wires such that the first, second, and third Josephson junctions of the superinductor that are in series are connected in parallel with the shunted Josephson junction.

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