公开(公告)号：GB2365216B

公开(公告)日：2004-10-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：HK1055641A1

公开(公告)日：2004-01-16

申请号：HK03107854

申请日：2003-10-31

Applicant: IBM

Inventor： DALTON TIMOTHY JOSEPH ,  GRECO STEPHEN EDWARD ,  HEDRICK JEFFREY CURTIS ,  NITTA SATYANARAYANA V ,  PURUSHOTHAMAN SAMPATH ,  RODBELL KENNETH PARKER ,  ROSENBERG ROBERT

IPC: H01L21/316 ,  H01L21/31 ,  H01L21/768 ,  H01L23/532 ,  H01L

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

公开(公告)号：GB2365216A

公开(公告)日：2002-02-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device contains a diffusion barrier layer 14a, 14b, 14c. The semiconductor device preferably includes a semiconductor substrate 8 and a dielectric layer 10 containing conductive metal elements 12; and the diffusion barrier layer 14 is applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is typically more concentrated near the lower and upper surfaces 14a, 14b of the diffusion barrier layer as compared to the central portion 14c of the diffusion barrier layer. It is found that this process leads to improved adhesion of the diffusion barrier layer, but without raising the dielectric constant too much. The diffusion barrier layer may also include oxygen. The diffusion barrier layer may be formed by atomic layer deposition or by PECVD.