公开(公告)号：DE2964744D1

公开(公告)日：1983-03-17

申请号：DE2964744

申请日：1979-11-06

Applicant: IBM

Inventor： HODGSON RODNEY TREVOR ,  HOVEL HAROLD JOHN ,  WOODALL JERRY MAC PHERSON

IPC: H01L31/04 ,  H01L31/055 ,  H01L31/06

公开(公告)号：DE2735937A1

公开(公告)日：1978-05-24

申请号：DE2735937

申请日：1977-08-10

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  WOODALL JERRY MAC PHERSON

IPC: H01L31/04 ,  H01L21/208 ,  H01L31/0693 ,  H01L31/10 ,  H01L21/20 ,  H01L31/06

Abstract: A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

公开(公告)号：GB2516011A

公开(公告)日：2015-01-14

申请号：GB201311815

申请日：2013-07-02

Applicant: IBM

Inventor： SCHMIDT MARKUS ,  EICKELMANN HANS-JUERGEN ,  KELLMANN RUEDIGER ,  KUEHL HARTMUT ,  HOVEL HAROLD JOHN ,  STEEN STEVEN ERIK

IPC: H01L31/052 ,  H01L31/0232

Abstract: The invention relates to concentrated photovoltaics for thin film solar cell devices. The thin film solar cell device 100 comprises a substrate 10 with one or more thin film radiation absorbers 12 and a cover 20 which covers the substrate and the absorbers. Mounted to this is an integrated optical system 14, comprising at least one optical element 16 used for concentrating the light onto the solar cell. The optical element 16 and the corresponding radiation absorbers 12 are aligned with respect to their optical axis 24, such that an incoming radiation 22 is directed onto the radiation absorber 12 by the optical system 14. The device can have a second optical system 18 which is arranged between the first optical element and the radiation absorbers. The first optical system may be integrated at a top surface of the cover medium, and can comprise of a lens array, whilst the second optical system can comprise a light guide. The second optical element can be integrated with the top of the radiation absorbing device.

公开(公告)号：DE112010003603T5

公开(公告)日：2012-08-23

申请号：DE112010003603

申请日：2010-08-19

Applicant: IBM

Inventor： VAIDYANATHAN RAMAN ,  DELIGIANNI HARIKLIA ,  HOVEL HAROLD JOHN

IPC: H01L31/18 ,  H01L31/032 ,  H01L31/0336

Abstract: Ein Verfahren zum Verringern des Verlusts von Elementen einer photovoltaischen Dünnfilmstruktur während eines Temperverfahrens umfasst das Aufbringen eines Dünnfilms auf ein Substrat, wobei der Dünnfilm ein einzelnes chemisches Element oder eine chemische Verbindung umfasst, Überziehen des Dünnfilms mit einer Schutzschicht, um eine überzogene Dünnfilmstruktur zu bilden, wobei die Schutzschicht verhindert, dass ein Teil des einzelnen chemischen Elements oder ein Teil der chemischen Verbindung während eines Temperverfahrens entweicht, und Tempern der überzogenen Dünnfilmstruktur, um eine überzogene photovoltaische Dünnfilmstruktur zu bilden, wobei der überzogene photovoltaische Dünnfilm den Teil des einzelnen chemischen Elements oder den Teil der chemischen Verbindung, der von der Schutzschicht am Entweichen während des Temperns gehindert wird, behält.

公开(公告)号：DE69304503T2

公开(公告)日：1997-03-20

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

公开(公告)号：DE3687354D1

公开(公告)日：1993-02-11

申请号：DE3687354

申请日：1986-02-25

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  MCKOY THERMON EZZARD

IPC: C30B31/06 ,  C30B29/40 ,  C30B31/02 ,  H01L21/223 ,  H01L21/225

Abstract: A dopant is diffused into a Group III-V semiconductor body, by:… a) placing a deposition substrate possessing a dopant-containing layer in a heating chamber so that the dopantcontaining layer faces an object substrate made from a III-V simiconductor material;… b) introducing into the hearting chamber a source of the same Group V element as that in the object substrate, the source being capable of providing the Group V element in the vapour phase at the diffusion temperature with the vapour pressure of the vapour phase Group V element being at or above the equilibrium vapour pressure of the Group V element present at the surface of the object substrate; and,… c) heating the deposition substrate and the object subatrate to the diffusion temperature for a period of time sufficient to diffuse a desired amount of dopant into the object substrate to a desired depth therein.

公开(公告)号：DE3583970D1

公开(公告)日：1991-10-10

申请号：DE3583970

申请日：1985-06-11

Applicant: IBM

Inventor： HOVEL HAROLD JOHN

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/06 ,  H01L21/31

公开(公告)号：DE3160545D1

公开(公告)日：1983-08-11

申请号：DE3160545

申请日：1981-02-16

Applicant: IBM

Inventor： HOVEL HAROLD JOHN

IPC: H01L31/04 ,  H01L31/0392 ,  H01L31/07 ,  H01L31/078 ,  H01L31/06

Abstract: A high efficiency tandem solar cell is fabricated by evaporating a layer (2) of optically transparent conducting material, such as indium tin oxide, on a substrate layer (1) of crystalline silicon to form a photo-responsive p/n junction (3). A layer (4) of amorphous silicon is plasma deposited on the layer (2) and is n-doped in the region (5) in contact with the layer (2). A thin film (8) of optically transparent metal is evaporated on the layer (4) to form a photo-responsive Schottky barrier (9). A layer (12) of anti-reflective material, such as Ti02, is applied to the film (8). Light incident on the upper surface (13) has higher energy photons absorbed in the higher bandgap amorphous material layer (4) and lower energy photons pass through the transparent conductor layer (2) to a point of absorption in the lower energy gap crystalline material layer (1).

公开(公告)号：GB2485494B

公开(公告)日：2014-01-15

申请号：GB201200871

申请日：2010-08-19

Applicant: IBM

Inventor： VAIDYANATHAN RAMAN ,  DELIGIANNI HARIKLIA ,  HOVEL HAROLD JOHN

IPC: H01L31/0749

Abstract: A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.

公开(公告)号：GB2485494A

公开(公告)日：2012-05-16

申请号：GB201200871

申请日：2010-08-19

Applicant: IBM

Inventor： VAIDYANATHAN RAMAN ,  DELIGIANNI HARIKLIA ,  HOVEL HAROLD JOHN

IPC: H01L31/0749 ,  H01L31/0216

Abstract: A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer..