公开(公告)号：JPH11282166A

公开(公告)日：1999-10-15

申请号：JP1270699

申请日：1999-01-21

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

Inventor： BUCCHIGNANO JAMES J ,  HUANG WU-SONG ,  KATNANI AHMAD D ,  LEE KIM Y ,  MOREAU WAYNE M ,  PETRILLO KAREN E

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/143

Abstract: PROBLEM TO BE SOLVED: To provide a chemical amplification resist exhibiting improved preservability of a resist coating and almost or completely free from the effect of vacuum in use by incorporating an aq. base-soluble polymer or copolymer having polar functional groups, a part of which is protected with specified cycloaliphatic ketal substituents.
SOLUTION: The chemical amplification resist contains an aq. base-soluble polymer or copolymer having polar functional groups, some of which are protected with cycloaliphatic ketal substituents represented by the formula RO-X-as acid decomposable protective groups, an acid generating agent, a solvent for the base-soluble polymer or copolymer, a base and, optionally, a surfactant. In the formula, X is an about 3-12C optionally substd. cycloaliphatic functional group and R is about 1-12C linear or branched alkyl or the like.
COPYRIGHT: (C)1999,JPO

Abstract translation: 要解决的问题：提供具有改进的抗蚀剂涂层保存性的化学放大抗蚀剂，几乎或完全没有真空在使用中的作用， 具有极性官能团的碱溶性聚合物或共聚物，其一部分用特定的脂环族缩酮取代基保护。 解决方案：化学增幅抗蚀剂含有水溶液。 具有极性官能团的碱溶性聚合物或共聚物，其中一些由式RO-X代表的脂环族缩酮取代基保护，作为酸可分解的保护基团，酸产生剂，用于碱溶性聚合物或共聚物的溶剂， 碱和任选的表面活性剂。 在该式中，X是约3-12C任选取代的。 脂环族官能团，R为约1-12个直链或支链烷基等。

公开(公告)号：DE69214035D1

公开(公告)日：1996-10-31

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：FR2295466A1

公开(公告)日：1976-07-16

申请号：FR7533276

申请日：1975-10-22

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M ,  NEED OMAR U III

IPC: G03F7/16 ,  G03C1/74 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H05K3/00 ,  G03G17/00 ,  H01L21/312

Abstract: Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10.5 to 12% nitrogen.

公开(公告)号：DE2451902A1

公开(公告)日：1975-07-03

申请号：DE2451902

申请日：1974-10-31

Applicant: IBM

Inventor： MOREAU WAYNE M ,  TING CHIU H

IPC: G03F7/039 ,  G03F1/68 ,  G03F7/095 ,  G03F7/26 ,  H01L21/027 ,  H01L21/3205 ,  H05K3/02 ,  B44C1/22

公开(公告)号：SG43691A1

公开(公告)日：1997-11-14

申请号：SG1995002204

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONDS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：CA896191A

公开(公告)日：1972-03-21

申请号：CA896191D

Applicant: IBM

Inventor： ROTTMANN HANS R ,  MOREAU WAYNE M

IPC: G03F1/38 ,  G03F1/54 ,  G03F1/14 ,  G03B27/28

公开(公告)号：AU2002329596A1

公开(公告)日：2004-02-02

申请号：AU2002329596

申请日：2002-07-11

Applicant: IBM

Inventor： MOREAU WAYNE M ,  ANGELOPOULOS MARIE ,  ARIRAM ARI ,  GUARNIERI C RICHARD ,  HUANG WU-SONG ,  KWONG RANEE

IPC: C08K5/00 ,  B05D5/00 ,  B32B9/04 ,  C08G77/04 ,  C08J7/18 ,  C08L83/04 ,  G03C1/76 ,  H01L21/312 ,  H01L21/3213

公开(公告)号：DE69214035T2

公开(公告)日：1997-04-10

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：CA2001384A1

公开(公告)日：1990-04-28

申请号：CA2001384

申请日：1989-10-24

Applicant: IBM

Inventor： MERRITT DAVID P ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: C09D11/10 ,  C08F8/14 ,  G03F7/039 ,  H01L21/027

Abstract: Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendant to the polymer backbone, a portion of which groups are substituted with acid labile groups.

公开(公告)号：FR2299665A1

公开(公告)日：1976-08-27

申请号：FR7538564

申请日：1975-12-09

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  NEED OMAR U III ,  MOREAU WAYNE M

IPC: B41C1/00 ,  C08J3/28 ,  G03F7/039 ,  H01L21/027 ,  G03C1/495 ,  C08F220/10 ,  H01L21/312

Abstract: 1515330 Electron sensitive polymers INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1975 [29 Jan 1975] 49960/75 Heading G2C Positive resist masks are formed by exposing a supported film of a non-crosslinked polymeric material to electron beam radiation in a predetermined pattern so as to degrade the polymeric material in the exposed areas, and removing the degraded products in the exposed areas. The polymeric material used is selected from (1) polyalkyl methacrylates and copolymers of alkyl methacrylates with halogen - or cyano - containing monomers and (2) post halogenated derivatives of the polymers in (1). The coated polymers may be baked prior to exposure and also after development.