公开(公告)号：DE69307716T2

公开(公告)日：1997-06-12

申请号：DE69307716

申请日：1993-09-24

Applicant: HOECHST CELANESE CORP ,  IBM

Inventor： LU PING-HUNG ,  DAMMEL RALPH R ,  EIB NICHOLAS KISER ,  FICNER STANLEY A ,  KHANNA DINESH N ,  KLOFFENSTEIN THOMAS J ,  LYONS CHRISTOPHER F ,  PLAT MARINA ,  RAHMAN M DALIL

IPC: C08L61/04 ,  C08L61/06 ,  G03F7/023 ,  H01L21/027

Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.

公开(公告)号：DE69307716D1

公开(公告)日：1997-03-06

申请号：DE69307716

申请日：1993-09-24

Applicant: HOECHST CELANESE CORP ,  IBM

Inventor： LU PING-HUNG ,  DAMMEL RALPH R ,  EIB NICHOLAS KISER ,  FICNER STANLEY A ,  KHANNA DINESH N ,  KLOFFENSTEIN THOMAS J ,  LYONS CHRISTOPHER F ,  PLAT MARINA ,  RAHMAN M DALIL

IPC: C08L61/04 ,  C08L61/06 ,  G03F7/023 ,  H01L21/027

Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.

公开(公告)号：CA2090039A1

公开(公告)日：1992-03-19

申请号：CA2090039

申请日：1990-12-21

Applicant: IBM

Inventor： CONLEY WILLARD E ,  KWONG RANEE W ,  KVITEK RICHARD J ,  LANG ROBERT N ,  LYONS CHRISTOPHER F ,  MIURA STEVE S ,  MOREAU WAYNE M ,  SACHDEV HARBANS S ,  WOOD ROBERT L

IPC: G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03F7/16

Abstract: 2090039 9205474 PCTABS00011 A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

公开(公告)号：DE69214035D1

公开(公告)日：1996-10-31

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：HK63397A

公开(公告)日：1997-05-23

申请号：HK63397

申请日：1997-05-15

Applicant: HOECHST CELANESE CORP ,  IBM

Inventor： LU PING-HUNG ,  DAMMEL RALPH R ,  EIB NICHOLAS KISER ,  FICNER STANLEY A ,  KHANNA DINESH N ,  KLOFFENSTEIN THOMAS J JR ,  LYONS CHRISTOPHER F ,  PLAT MARINA ,  RAHMAN M DALIL

IPC: C08L61/04 ,  C08L61/06 ,  G03F7/023 ,  H01L21/027

Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.

公开(公告)号：DE69214035T2

公开(公告)日：1997-04-10

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.