公开(公告)号：DE102004045768B4

公开(公告)日：2007-01-04

申请号：DE102004045768

申请日：2004-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  FALCK ELMAR ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/74 ,  H01L29/861

公开(公告)号：DE102015115723A1

公开(公告)日：2016-03-31

申请号：DE102015115723

申请日：2015-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHMIDT GERHARD ,  FALCK ELMAR

IPC: H01L29/861 ,  H01L21/265 ,  H01L21/329 ,  H01L21/331 ,  H01L29/06 ,  H01L29/36 ,  H01L29/739

Abstract: Ein Halbleiterbauelement weist einen Halbleiterkörper (100) mit einer ersten Seite (101) und einer zweiten Seite (102) auf, die von der ersten Seite (101) in einer ersten vertikalen Richtung (v1) beabstandet angeordnet ist. Das Halbleiterbauelement weist einen gleichrichtenden Übergang (111) auf, eine Feldstoppzone (119) von einem ersten Leitungstyp (n) und eine Driftzone (118) von einem ersten Leitungstyp (n), die zwischen dem gleichrichtenden Übergang (111) und der Feldstoppzone (119) angeordnet ist. Der Halbleiterkörper (100) weist entlang einer geraden Linie (g) parallel zu der ersten vertikalen Richtung (v1) eine Netto-Dotierungskonzentration (NNET) auf. Von (a) und (b) trifft zumindest eines zu: (a) Die Driftzone (118) weist bei einer ersten Tiefe (d1) einen Ladungsschwerpunkt auf, wobei ein Abstand (d1-d111) zwischen den gleichrichtenden Übergang (111) und dem Ladungsschwerpunkt kleiner ist als 37% der Dicke (d112-d111), die die Driftzone (118) in der ersten vertikalen Richtung (v1) aufweist; (b) der Absolutbetrag (│NNET│) der Netto-Dotierungskonzentration (NNET) weist entlang der geraden Linie (g) und innerhalb der Driftzone (118) einen lokalen Maximumswert (MAX) auf.

公开(公告)号：DE10349582B4

公开(公告)日：2008-09-25

申请号：DE10349582

申请日：2003-10-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON DR-ING ,  HILLE FRANK ,  VYTLA RAJEEV KRISHNA ,  FALCK ELMAR ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  STRACK HELMUT

IPC: H01L29/861 ,  H01L21/26 ,  H01L21/329 ,  H01L29/32

公开(公告)号：DE10240107B4

公开(公告)日：2008-03-06

申请号：DE10240107

申请日：2002-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  FALCK ELMAR

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/739 ,  H01L29/745 ,  H01L29/861 ,  H01L29/87

公开(公告)号：DE10238797B4

公开(公告)日：2007-09-20

申请号：DE10238797

申请日：2002-08-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  FALCK ELMAR

IPC: H01L29/861 ,  H01L21/329 ,  H01L29/06

公开(公告)号：DE10361136B4

公开(公告)日：2005-10-27

申请号：DE10361136

申请日：2003-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  PFIRSCH FRANK ,  FALCK ELMAR ,  LUTZ JOSEF

IPC: H01L29/08 ,  H01L29/739 ,  H01L29/861 ,  H01L29/06

Abstract: Between semiconductor diode (1) anode (2) and cathode (3) is fitted semiconductor volume (7), in which are formed several semiconductor zones (81-4), inversely doped with respect to their direct environment, mutually spaced apart, located near to, but spaced from cathode.Preferably semiconductor volume contains three semiconductor layers (4-6), fitted in this order on cathode. First layer is N+/-doped, second N=doped and third is P-doped, with semiconductor zoned formed within second layer(s). Independent claims are included for IGBT and semiconductor component.

公开(公告)号：DE102004005775A1

公开(公告)日：2005-08-25

申请号：DE102004005775

申请日：2004-02-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  FALCK ELMAR ,  PFIRSCH FRANK ,  SCHMIDT GERHARD ,  HIRLER FRANZ

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

Abstract: The semi conductor device has a pair of connection zones [2,3] with a semiconductor zone [4] with a formed drift zone [5] in between. The drift zone has a compensating structure and has field electrodes [6] in direct contact. The field electrodes are of hydrogen impregnated carbon or polycrystalline silicon.

公开(公告)号：DE10342559B3

公开(公告)日：2005-04-14

申请号：DE10342559

申请日：2003-09-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FALCK ELMAR ,  MAUDER ANTON

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/78 ,  H01L29/739

Abstract: On parts of the insulation layer an electrically conducting layer is deposited, which contacts part of the first region of the second conductivity type. The side wall has concave curvature transitioning into the trench base, where a further trench is arranged. An independent claim is included for the corresponding method of manufacture.

公开(公告)号：DE10240107A1

公开(公告)日：2004-03-11

申请号：DE10240107

申请日：2002-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  FALCK ELMAR

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/87 ,  H01L21/328 ,  H01L29/70 ,  H01L29/739 ,  H01L29/745

Abstract: Edge end comprises a semiconductor body (21) having a first conductivity type with two opposing main surfaces (30,31), a first region (22) of opposing conductivity type embedded in the first main surface, a second region (24) of a first conductivity type provided in the first region, a region (23) of different conductivity type provided in the region of the second main surface, a first electrode (6) arranged on the first main surface, and a second electrode (8) on the second main surface. A first zone (17) of different conductivity extends from the edge of the third and/or first region in the semiconductor body. Independent claims are also included for: (1) process for the production of an n-conducting zone, preferably an edge end, in a p-conducting semiconductor body; and (2) diode having a p-conducting semiconductor body.

公开(公告)号：DE10238797A1

公开(公告)日：2004-03-11

申请号：DE10238797

申请日：2002-08-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  FALCK ELMAR

IPC: H01L29/06 ,  H01L29/861 ,  H01L21/329

Abstract: Power semiconductor diode comprises a semiconductor body (3) of first conductivity type with a first zone (4) of opposing conductivity type embedded in the semiconductor body and a second zone (5) embedded in the first zone. A further zone (8) of second conductivity is embedded in the second zone, has a stronger doping than the second zone and extends below the end of the edge structure (6). An Independent claim is also included for a process for the production of a power semiconductor diode comprising applying a structure layer on a semiconductor body as mask, forming a p-sink by ion implantation using the mask, removing the mask layer, diffusing the p-sink doping at 1000-1260degrees C for 10-700 minutes in an inert or slightly oxidizing atmosphere, applying a structured layer on the semiconductor body to mask the edge region of the p-sink, increasing the doping of the edge region of a p-emitter, forming an anode contact using ion implantation, curing the contact implantation, and implanting a rear side emitter.