公开(公告)号：DE10115812A1

公开(公告)日：2002-07-04

申请号：DE10115812

申请日：2001-03-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNKEL GERHARD

IPC: G03F7/20

Abstract: The diaphragm is in the region of the objective lens system. It has a through aperture (1b) of a non-circular geometric shape for fading the bend maximum of different arrangements of the structure of the mask in or out, reducing the influence of imperfections in the lens or of aberration on the quality of the projection

公开(公告)号：DE102006008710A1

公开(公告)日：2006-09-07

申请号：DE102006008710

申请日：2006-02-24

Applicant: INFINEON TECHNOLOGIES RICHMOND ,  INFINEON TECHNOLOGIES AG

Inventor： KUNKEL GERHARD ,  LOMTSCHER PATRICK ,  ROBERTS WILLIAM ,  SCHUMACHER KARL

IPC: G03F7/20 ,  G01M11/02

Abstract: An exposure tool includes an illumination source, a blazed phase grating reticle, a reticle stage holding the blazed phase grating reticle, a lens system including at least one adjustable lens element, a wafer stage holding a sample, and a controller. The controller is configured to control the illumination source and the position of the blazed phase grating reticle and the lens system relative to the wafer stage to expose the sample to generate a blazed phase grating sample. The controller is configured to adjust the at least one adjustable lens element to compensate for aberrations of the lens system based on feedback generated from analyzing images of the blazed phase grating sample.

公开(公告)号：DE10339514A1

公开(公告)日：2005-03-31

申请号：DE10339514

申请日：2003-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNKEL GERHARD

IPC: G03F1/00 ,  G03F7/20 ,  G03F7/207

Abstract: The light projection system (100) has a lamp (15) shining light through a slit (18) onto a mask or reticle (6) scanned sideways (45) in front of a lens (51). The mask incorporates transparent (10') or semitransparent (12') elements. The mask elements are arranged in an array designed to give a regular pattern (10'',12'') when focused on a substrate (17). The lens may be adjusted to focus or defocus the image to a given extent to vary the pattern. The substrate may be scanned sideways (46) under the lens.

公开(公告)号：DE10317366A1

公开(公告)日：2004-11-25

申请号：DE10317366

申请日：2003-04-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENKE WOLFGANG ,  KUNKEL GERHARD

IPC: G01M11/02 ,  G01N21/41 ,  G01N21/59 ,  G03F7/20

Abstract: A projector lens (20) transmission measurement procedure uses a scattering grid mask with three transparent areas between lit by light source so that the beam is split (101, 201) into two orders (100, 200) passing through the lens whose intensity profile in the image plane is measured and compared with a reference.

公开(公告)号：DE60106256D1

公开(公告)日：2004-11-11

申请号：DE60106256

申请日：2001-06-26

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： KUNKEL GERHARD ,  BUTT SHAHID ,  RADENS CARL J

IPC: G11C11/4097 ,  H01L21/8242 ,  H01L27/108 ,  G11C11/00

Abstract: A dynamic random access memory is formed in a silicon chip in arrays of clusters, each of four cells in a single active area. Each active area is cross-shaped with vertical trenches at the four ends of the two crossbars. The central region of the active area where the two crossbars intersect serves as the common base region of the four transistors of the cluster. The top of the base region serves as a common drain for the four transistors and each transistor has a separate channel along the wall of its associated vertical trench that provides its storage capacitor. Each cluster includes a common bit line and four separate word-line contacts.

公开(公告)号：DE10160616A1

公开(公告)日：2003-06-05

申请号：DE10160616

申请日：2001-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  KUNKEL GERHARD ,  HENNIG MARIO ,  KOEHLE RODERICK ,  VOIGT INA

IPC: G03F1/00 ,  G03F1/14

Abstract: Phase shift mask (8) comprises a first structure (1) and a second structure (2) arranged as a pair on a quartz support material with a light-impermeable chromium layer surrounding the two structures. The first structure has a phase shift for a light entering the structures which is different by 180 deg from the second structure. An Independent claim is also included for a process for the production of the phase shift mask. Preferred Features: The phase shift mask has a number of regularly arranged pairs of first and second structures. The structure pairs form pairs of trench capacitors on a semiconductor wafer in a storage cell field.

公开(公告)号：DE10203358A1

公开(公告)日：2003-04-03

申请号：DE10203358

申请日：2002-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNKEL GERHARD ,  SACHSE HERMANN ,  BAUCH LOTHAR ,  WURZER HELMUT

IPC: G03F1/32 ,  G03F1/00 ,  G03F1/38 ,  G03F1/14

公开(公告)号：DE10327613B4

公开(公告)日：2007-10-31

申请号：DE10327613

申请日：2003-06-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNKEL GERHARD ,  ZIEBOLD RALF

IPC: G03C5/00 ,  G03F1/00 ,  G03F9/00

Abstract: Formation of preferably square hole (16) on alternating phase mask (1) where hole has two partial regions (12,14) on which light ray impinges with different phase fluctuations involving: preparation of transparent substrate (18) with surface having opaque layer (10), which has two layers (32) in etch process, formation of hole in layer (32), etching so that region (12) is exposed, further etching, widening hole in layer (32), and final layer (32) removal.

公开(公告)号：DE102006008709A1

公开(公告)日：2006-11-16

申请号：DE102006008709

申请日：2006-02-24

Applicant: INFINEON TECHNOLOGIES RICHMOND ,  INFINEON TECHNOLOGIES AG

Inventor： KUNKEL GERHARD ,  LOMTSCHER PATRICK ,  ROBERTS WILLIAM ,  SCHUMACHER KARL

IPC: G01M11/02 ,  G03F7/20

Abstract: An inspection system includes an illumination source configured to illuminate a blazed phase grating sample, image collection pathways and an imaging system configured to capture an image of a sample point of the blazed phase grating sample, and a controller configured to adjust the illumination source in response to an analysis of the image of the sample point to determine illumination uniformity of the inspection system.

公开(公告)号：DE102006008705A1

公开(公告)日：2006-09-14

申请号：DE102006008705

申请日：2006-02-24

Applicant: INFINEON TECHNOLOGIES RICHMOND ,  INFINEON TECHNOLOGIES AG

Inventor： GRACA STEVE ,  KUNKEL GERHARD ,  LOMTSCHER PATRICK ,  ROBERTS WILLIAM ,  SCHUMACHER KARL

IPC: G03F7/207 ,  G03F7/20

Abstract: A sample for generating feedback for adjusting focal plane fitting values of an exposure tool by product shot comprises a product wafer, an opaque material layer adjacent the product wafer, and a blazed phase grating patterned layer adjacent the opaque material layer.