公开(公告)号：JP2002056689A

公开(公告)日：2002-02-22

申请号：JP2001157853

申请日：2001-05-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAISER ROBERT ,  LINDOLF JUERGEN ,  SCHNEIDER HELMUT

IPC: G11C17/00 ,  G11C17/18 ,  H01L21/82 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To prevent surely rapid deterioration process of fuse/anti-fuse and unexpected burnout of fuse/anti-fuse being never burned out hitherto in reading out fuse/anti-fuse of a semiconductor memory assembly such as especially a DRAM. SOLUTION: In reading out of fuse/anti-fuse, voltage Vb1h deciding a high potential of a bit line BL of a memory cell array 6 is used instead of internal voltage Vint being general hitherto. The voltage Vb1h is reduced for the internal voltage Vint, especially, it is preferable that voltage Vb1h is reduced by almost 20% to 30% for the internal voltage Vint.

公开(公告)号：JP2001216778A

公开(公告)日：2001-08-10

申请号：JP2000402830

申请日：2000-12-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEIDER HELMUT ,  SCHOENIGER SABINE

IPC: G11C11/407 ,  G11C7/06 ,  G11C7/10 ,  G11C8/18 ,  G11C11/408

Abstract: PROBLEM TO BE SOLVED: To provide a circuit device for a semiconductor integrated memory which can be utilized for semiconductor memories of various form and in which a function of the circuit is guaranteed without being affected externally as much as possible, in order to perform access one of column lines. SOLUTION: A circuit device has a memory cell MC, a decoder 10 for selecting one of column lines BL, and a terminal 21 for a column activating signal S21 for activating row access signal trains S22, S23. A terminal 12 for an input signal S12 of a decoder 10 is connected to the terminal 22 for at least one signal S22 out of row access signal trains S22, S23, and it is indicated that row access is finished by a state of a signal.

公开(公告)号：JP2000339989A

公开(公告)日：2000-12-08

申请号：JP2000140404

申请日：2000-05-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAISER ROBERT ,  SCHAMBERGER FLORIAN ,  SCHNEIDER HELMUT

IPC: G11C29/04 ,  G11C17/18 ,  G11C29/00

Abstract: PROBLEM TO BE SOLVED: To allow a programmable element to be programmed with a high voltage and allow an area of a circuit element of a readout circuit to be saved by connecting a second terminal of the programmable element, to which a first terminal of a protective circuit is connected, to an input side of the readout circuit and by limiting a voltage at the second terminal. SOLUTION: A terminal al of a protective circuit 1 is connected to a terminal AF of a programmable element F, while a terminal a2 is connected to a terminal EA on an input side of a readout circuit A. During a programming process of the programming element F, an electrical potential V1 has a positive burn- voltage value. When a switchable element is switched so as to be conducting, the programmable element F is transferred into a low ohm condition and an electrical potential at a node K increases to the burn-voltage value. At this time, an electrical potential at a node N does not increase to exceed a sum of an electrical potential V3 corresponding to a normal positive operating voltage and a forward voltage of a diode D.

公开(公告)号：JP2000252438A

公开(公告)日：2000-09-14

申请号：JP2000043268

申请日：2000-02-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CHRYSOSTOMIDES ATHANASIA ,  FEURLE ROBERT ,  SAVIGNAC DOMINIQUE ,  SCHNEIDER HELMUT

IPC: H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor storage device wherein components are little affected by neighborhood action at manufacturing, providing connected diffusion regions. SOLUTION: Provided on a vacant surface 4, a dummy component 3 is identical with a component adjacent to a memory cell field or similar, as possible, to the component, while provided in the connected diffusion regions 5 common to the component adjacent to the dummy component.

公开(公告)号：JP2000243837A

公开(公告)日：2000-09-08

申请号：JP2000038349

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FEURLE ROBERT ,  SCHNEIDER HELMUT

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

Abstract: PROBLEM TO BE SOLVED: To make it possible to reliably avoid the instability at each critical spot on conductor paths by a method wherein the conductor paths are supported by dummy contacts at the critical spots due to a layout. SOLUTION: The conductor paths 10 and 11 and 14 and 15 out of conductor paths 10 to 15 are respectively crossovered mutually at twisted regions. When the conductor paths 10 to 15 are metallized, critical spots are respectively generated at places, where a discontinuity is generated for a proximity effect in the proximity parts of the conductor paths, on the conductor paths. Such the discontinuity is generated in the case where one of the conductor paths adjacent to each other is blockaded. At this uncontinuous place, the conductor path has an instability and a breaking of the conductor path is caused. Dummy contacts 16 to 20 are respectively provided on these critical spots and these dummy contacts 16 to 20 lead to the plane positioned under the lower part of the plane of the conductor paths. Thereby, the instability of the conductor paths or the breaking of the conductor paths can be reliably avoided.

公开(公告)号：WO03017280A2

公开(公告)日：2003-02-27

申请号：PCT/DE0202756

申请日：2002-07-26

Applicant: INFINEON TECHNOLOGIES AG ,  SCHNEIDER HELMUT

Inventor： SCHNEIDER HELMUT

IPC: G11C7/06 ,  G11C7/08 ,  G11C7/18

CPC classification number: G11C7/06 ,  G11C7/18

Abstract: A circuit part is provided for the generation of control signals and application thereof to the sense amplifiers, made up of generation circuits as in the provided figure. The generation circuits are arranged within the memory cell field adjacent to the sense amplifiers and generate control signals which are directly locally applied to the sense amplifiers, with the exception of a particular number of global control signals. The generation circuits are preferably arranged in the plane of the memory cell fields, in which bands with sense amplifiers and word line drivers overlap.

Abstract translation: 用于产生控制信号和供应读出放大器的电路部分由附图中的发生电路构成。 产生电路设置在与读出放大器相邻的存储单元阵列内，并产生控制信号，除了一定数量的全局控制信号外，它们在现场提供给读出放大器。 优选地，发生电路被布置在存储单元阵列的区域中，其中条与读出放大器和字线驱动器重叠。

公开(公告)号：DE102005016597B3

公开(公告)日：2006-06-29

申请号：DE102005016597

申请日：2005-04-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNABEL FLORIAN ,  SCHNEIDER HELMUT

IPC: G11C7/12 ,  G11C11/4074 ,  G11C11/4094

Abstract: The electronic component (10) has first bit line (14) and second bit line (16) coupled with memory cells (12). The first bit line and second bit line are connected to controllable resistor (36). The electrical resistance of the resistor is thus controllable by applying pre-determined resistance value. The pre-determined second resistance value is greater than the pre-determined first resistance value. An independent claim is also included for the method for operation of electronic component.

公开(公告)号：DE102005049204A1

公开(公告)日：2006-05-04

申请号：DE102005049204

申请日：2005-10-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BROX MARTIN ,  HOUGHTON RUSSELL J ,  SCHNEIDER HELMUT ,  KIESER-SCHOENIGER SABINE

IPC: G11C11/407

Abstract: A semiconductor memory having at least one memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal. The invention also relates to a tri-state driver device for driving the control signal. Further, there is a method for operating a memory, in which the memory has a memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal.

公开(公告)号：DE10339894B4

公开(公告)日：2006-04-06

申请号：DE10339894

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BROX MARTIN ,  SCHNEIDER HELMUT

IPC: G11C7/06 ,  G11C8/12 ,  G11C11/4091

Abstract: The apparatus includes a switch unit for connecting a reader amplifier unit to a bit line or a cell field region and for disconnecting the amplifier from the bit line or cell field region in dependence on the state of a control signal on a control line. The apparatus also has a driver to drive the control signal. An additional switch is provided which can cause a change in state of the control signal applied to the control line. Independent claims also cover a method of operating the apparatus.

公开(公告)号：DE59911518D1

公开(公告)日：2005-03-03

申请号：DE59911518

申请日：1999-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FEURLE ROBERT ,  SCHNEIDER HELMUT

IPC: H01L21/60 ,  G01R31/28 ,  G01R31/3185 ,  G11C11/401

Abstract: The semiconductor chip has bonding pads (IOP) to exchange input and output data, which can be preset for one of several possible data input/output organization forms (DQ4,DQ8). Not all of the bonding pads are used in normal use. All the bonding pads are connected to external connectors. The semiconductor chip has an altered input/output organization form, so that bonding pads not used in normal use are used in the test operation.