公开(公告)号：DE10143074C2

公开(公告)日：2003-12-24

申请号：DE10143074

申请日：2001-09-03

Applicant: INFINEON TECHNOLOGIES AG ,  FRAUNHOFER GES FORSCHUNG

Inventor： TRUNK RALPH ,  SCHNEIDER CLAUS ,  PFITZNER LOTHAR ,  STORBECK OLAF

IPC: G01N15/06

Abstract: A configuration for measuring the concentration of contaminating particles at high time resolution in the mini environments of loading and unloading chambers of processing appliances in semiconductor fabrication includes a probe, a movement unit for the probe, a particle detector, vacuum pump and a control unit. Reaching critical layer thicknesses of disk carriers or boats in ovens, and maladjustments of handling systems for wafers, masks, flat panel displays and other disc-like objects can be detected in terms of the cause and quantified immediately. The movement unit moves the probe to a desired position in the loading and unloading chamber as a reaction to the positioning of the handling system. A method of operating the configuration is also provided.

公开(公告)号：DE102016124968A1

公开(公告)日：2018-06-21

申请号：DE102016124968

申请日：2016-12-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  IRSIGLER PETER ,  HELLMUND OLIVER ,  STORBECK OLAF

IPC: H01L21/318 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78

Abstract: Eine Bodystruktur und eine Driftzone werden in einer Halbleiterschicht ausgebildet, wobei die Bodystruktur und die Driftzone einen ersten pn-Übergang bilden. Eine Siliziumnitridschicht wird auf der Halbleiterschicht gebildet. Eine Siliziumoxidschicht wird aus zumindest einem vertikalen Abschnitt der Siliziumnitridschicht durch Oxidation mit Sauerstoffradikalen gebildet.

公开(公告)号：DE10120523A1

公开(公告)日：2002-10-31

申请号：DE10120523

申请日：2001-04-26

Applicant: INFINEON TECHNOLOGIES AG ,  MATTSON THERMAL PRODUCTS GMBH

Inventor： HAYN REGINA ,  SACHSE JENS-UWE ,  SCHOER ERWIN ,  KEGEL WILHELM ,  STORBECK OLAF ,  STADTMUELLER MICHAEL ,  ROTERS GEORG ,  FRIGGE STEFFEN

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L21/336

Abstract: In selective oxidation of gate structures known per se, which contain a polycrystalline silicon layer and a tungsten layer, tungsten oxide evaporation is prevented or at least substantially reduced by means of a special process control, whereby the gate structure is exposed to a non-aqueous inert gas containing hydrogen before and optionally after a treatment step with a hydrogen/water mixture.

公开(公告)号：DE102005024855A1

公开(公告)日：2006-12-07

申请号：DE102005024855

申请日：2005-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： JASCHIK STEFAN ,  AVELLAN ALEJANDRO ,  SCHROEDER UWE ,  ORTH ANDREAS ,  GOLDBACH MATTHIAS ,  STORBECK OLAF ,  STADTMUELLER MICHAEL ,  HECHT THOMAS

IPC: H01L21/8242

Abstract: Memory and method for fabricating it A memory formed as an integrated circuit in a semiconductor substrate and having storage capacitors and switching transistors. The storage capacitors are formed in the semiconductor substrate in a trench and have an outer electrode layer, which is formed around the trench, a dielectric intermediate layer, which is embodied on the trench wall, and an inner electrode layer, with which the trench is essentially filled, and the switching transistors are formed in the semiconductor substrate in a surface region and have a first source/drain doping region, a second source/drain doping region and an intervening channel, which is separated from a gate electrode by an insulator layer.

公开(公告)号：DE102004024105A1

公开(公告)日：2005-06-09

申请号：DE102004024105

申请日：2004-05-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  STORBECK OLAF ,  STADTMUELLER MICHAEL ,  KAINZ STEFAN

IPC: H01L21/334 ,  H01L21/8242 ,  H01L27/108