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    Photo-crosslinkable polymers and crosslinked polymers obtained from them, useful in the microelectronics, automobile and aircraft industries, are new
    12.
    发明专利
    Photo-crosslinkable polymers and crosslinked polymers obtained from them, useful in the microelectronics, automobile and aircraft industries, are new 未知

    公开(公告)号：DE10131536A1

    公开(公告)日：2003-01-16

    申请号：DE10131536

    申请日：2001-06-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HALIK MARCUS ,  WALTER ANDREAS ,  LOWACK KLAUS ,  SEZI RECAI

    IPC: C08G73/02 ,  C08G73/10 ,  C08J5/18 ,  C09J179/08 ,  H01L21/312 ,  C08G83/00 ,  C09D5/24 ,  C08J3/24

    Abstract: Photo-crosslinkable polymers and crosslinked polymers obtained from them are new. The photo-crosslinkable polymers have the formula (I): RA(QXQ)d(Y NHZ (OH)2NHY QXQ)e(Y NHZ (OH)2NH)fRB (I) A(QXQ)a(Y )b(NHZ (OH)2NHY )c (Ia) (Y )g(QXQ)hA (Ib) RA = formula (Ia); RB = formula (Ib); A = H, hetero atom whose free valencies are saturated by H atoms, or a bonding residue which can include up to 30 C atoms and one or more hetero atoms; X = contains 1-500 repeating units; Y to Y = up to 50C double bonding residue, where Y to Y have at least two carbonyl groups, via which Y to Y are bonded to Q or to a Z-group bonded NH group, where at least the Y group is formed from a structural unit of formula (II); R = H or a bonding residue which can include one or more hetero atoms; Z to Z = up to 80C bonding residue, two pairs of which have vicinal bonds to adjacent O and N, from a six-member aromatic or five- or six-member heteroaromatic ring, which is part of the Z group (sic), and the bonding pairs can be from the same or different rings; a = 0 or 1, and when a = 0 and b = 1, A = ORx or NRx2,where Rx can be H or a 20C bonding residue, and when a = 1 and b = 1; b = 0 or 1 and when b = 0 a = 0; c = 1-100; d = 0 or 1; e = 0-20; f = 0-100; g = 0 or 1,and when g = 0 h = 0; and h = 0 or 1, and when h =0 and g =1, A =ORx or NRx2, and when h =1 g = 1. An Independent claim is included for a crosslinked polymer obtainable by subjection of the photo-polymerizable polymer (PPP) to: (a) heat treatment whereby the hydroxyamide group of the PPP is cyclized to an oxazole by splitting off water; and (b) crosslinking of the Y to Y groups, with structural units of formula (II) by radiation with light of wavelength 230 to 600 nm. Steps (a) and (b) can be in any order or simultaneous.

    14.
    发明专利
    未知

    公开(公告)号：DE102004051152A1

    公开(公告)日：2006-05-04

    申请号：DE102004051152

    申请日：2004-10-20

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HOFFMANN KURT ,  DEHM CHRISTINE ,  SEZI RECAI ,  WALTER ANDREAS

    IPC: G11C13/00 ,  G11C5/06 ,  G11C7/18 ,  H01L27/06 ,  H01L27/105 ,  H01L45/00

    Abstract: A memory arrangement includes: a first line for applying a reference voltage, a second line for applying an operating voltage, and a plurality of resistive memory elements, each element includes a resistive memory cell and a MOS memory cell selection transistor. A NOR memory arrangement is configured with each memory element including the resistive memory cell and selection transistor connected in series with the transistor connected to the first line, and the memory cell connected to the second line. A NAND memory arrangement is configured with a series of resistive memory elements forming a chain with each memory element including the resistive memory cell and selection transistor connected in parallel. The chain is connected to the first line disposed on a side of the memory cells facing the selection transistors and the second line disposed on a side of the memory cells which is remote from the selection transistors.

    16.
    发明专利
    未知

    公开(公告)号：DE102004037150A1

    公开(公告)日：2006-03-02

    申请号：DE102004037150

    申请日：2004-07-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  WEITZ THOMAS ,  ENGL REIMUND ,  SEZI RECAI ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

    IPC: C07C255/10 ,  C07C255/34 ,  C07C255/35 ,  C07C325/02 ,  G11C13/00 ,  H01L51/05

    Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

    18.
    发明专利
    未知

    公开(公告)号：DE10340609A1

    公开(公告)日：2005-04-07

    申请号：DE10340609

    申请日：2003-08-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HALIK MARCUS ,  WALTER ANDREAS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE

    IPC: C08K5/053 ,  C08K5/42 ,  C08L61/14 ,  H01B3/44 ,  H01L51/30 ,  C08F261/02 ,  C08F265/06

    Abstract: Embodiments of the invention relate to an integrated circuit comprising an organic semiconductor, particularly an organic field effect transistor (OFET) that is provided with a dielectric layer. The integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one electrophilic crosslinking component, c) 1 to 10 parts of at least one thermal acid catalyst that generates an activating proton at temperatures ranging from 100 to 150° C., dissolved in d) at least one solvent. Other embodiments of the invention further relate to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, especially for OFET's at low temperatures.

    19.
    发明专利
    未知

    公开(公告)号：DE10228770A1

    公开(公告)日：2004-02-12

    申请号：DE10228770

    申请日：2002-06-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEZI RECAI ,  WALTER ANDREAS ,  MALTENBERGER ANNA ,  LOWACK KLAUS

    IPC: C08G73/02 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  H01B3/30 ,  H01B3/44 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  C08G73/10 ,  C08L79/06 ,  H01L23/532 ,  C09D5/24

    Abstract: New poly-o-hydroxyamides containing divalent polynuclear (hetero)aromatic residues in the polymer chain. Poly-o-hydroxyamides of formula (I). Y2 = -(Phe-O)n-E-(O-Phe)n-; Phe = phenylene; Y1, Y3 = as for Y2, or various optionally substituted (hetero)arylene groups, e.g. phenylene, naphthylene, pyrazinediyl, furandiyl (21 groups listed); Z1-Z3 = various tetravalent (hetero)aromatic groups, e.g. benzene-1,2,4,5-tetrayl, furan-2,3,4,5-tetrayl, fluorene-2,3,6,7-tetrayl (10 groups listed); A = (a) H, -CO(CH2)gCH3, -COCH=CH2, -CO-aryl etc. (14 groups listed) (if a = 0 and/or d = 1), or (b) OH, amino, -OCH2CH=CH2, aryloxy etc. (9 groups listed (if a = 1 and/or d = 0); E = various divalent polynuclear (hetero)aromatic groups, e.g. 1,1'-binaphthylene, pyrene-diyl, -Phe-CPh2-Phe- (10 groups listed); Ph = phenyl; R1 = H, -(CH2)fCH3, -(CH2)f-Ph, -COO(CH2)fCH3 or -COO(CH2)fPh; a, d, n = 0 or 1; b = 1-200; c = 0-200. Full definitions are given in the DEFINITIONS (Full Definitions) field. Independent claims are also included for the following: (1) Polybenzoxazoles (PBO) obtained from (I); (2) Method (M1) for the production of (I) by reacting monomers of formula H2N-Z(OR1)2-NH2 (II) with dicarboxylic acids or activated derivatives thereof of formula L-CO-Y-CO-L (III); (3) Method (M2) for the production of PBO by heating (I); (4) Electronic components (EC) with a dielectric containing PBO as above; (5) Method (M3) for the production of EC by coating a substrate with a solution of (I), evaporating the solvent, heating the resulting film to form PBO, structuring the PBO film to form a resist with trenches and contact holes, depositing a conductive material on the relief so as to fill the holes etc. and then removing excess conductive material; and (6) Method (M4) for the production of EC by coating a solution of (I) onto a substrate with trenches and contact holes between metallic surface structures, evaporating the solvent so that the trenches and holes are filled with (I) and then heating to form PBO. Z = Z1, Z2 or Z3; Y = Y1, Y2 or Y3; and L = OH or an activating group.

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