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公开(公告)号：AU2003298535A8
公开(公告)日：2004-05-04
申请号：AU2003298535
申请日：2003-08-01
Applicant: INTEL CORP
Inventor： TRAN QUAN , GINSBURG EYAL , RAO VALLURI , WANG LI-PENG , TALALYEVSKY ALEXANDER , MA QING , BAR-SADEH EYAL , HECK JOHN
Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.
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公开(公告)号：AT553380T
公开(公告)日：2012-04-15
申请号：AT04815440
申请日：2004-12-24
Applicant: INTEL CORP
Inventor： RAO VALLURI , MA QING , YAMAKAWA MINEO , BERLIN ANDREW , WANG LI-PENG , ZHANG YUEGANG
IPC: G01N33/543 , G01N29/02 , G01N29/036 , G01N29/34
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公开(公告)号：GB2453255B
公开(公告)日：2009-10-21
申请号：GB0817723
申请日：2008-09-26
Applicant: INTEL CORP
Inventor： GERFERS FRIEDEL , WANG LI-PENG
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公开(公告)号：GB2392329B
公开(公告)日：2005-03-16
申请号：GB0318456
申请日：2003-08-06
Applicant: INTEL CORP
Inventor： WANG LI-PENG , BAR-SADEH EYAL , RAO VALLURI , HECK JOHN , MA QING , TRAN QUAN , TALALYEVSKY ALEXANDER , GINSBURG EYAL
Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.
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公开(公告)号：GB2392329A
公开(公告)日：2004-02-25
申请号：GB0318456
申请日：2003-08-06
Applicant: INTEL CORP
Inventor： WANG LI-PENG , BAR-SADEH EYAL , RAO VALLURI , HECK JOHN , MA QING , TRAN QUAN , TALALYEVSKY ALEXANDER , GINSBURG EYAL
Abstract: An FBAR filter 10 may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators 38 formed on the same membrane 35. Each of the film bulk acoustic resonators 38 may be formed from a common lower conductive layer which is defined to form the bottom electrode 32 of each film bulk acoustic resonator 38. A common top conductive layer may be defined to form each top electrode 36 of each film bulk acoustic resonator 38. A common piezoelectric film layer 34 that may or may not be patterned, forms a continuous or discontinuous film. The plurality of FBARs 38 may be formed over a single backside cavity.
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Patent Agency Ranking
公开(公告)号：GB2447158B
公开(公告)日：2011-03-02
申请号：GB0807714
申请日：2006-12-06
Applicant: INTEL CORP
Inventor： RAO VALLURI , DOROS THEODORE G , MA QING , SESHAN KRISHNA , WANG LI-PENG
Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.
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公开(公告)号：DE102008048908A1
公开(公告)日：2009-04-09
申请号：DE102008048908
申请日：2008-09-26
Applicant: INTEL CORP
Inventor： GERFERS FRIEDEL , WANG LI-PENG
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公开(公告)号：GB2447158A
公开(公告)日：2008-09-03
申请号：GB0807714
申请日：2006-12-06
Applicant: INTEL CORP
Inventor： RAO VALLURI , DOROS THEODORE G , MA QING , SESHAN KRISHNA , WANG LI-PENG
Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones (50, 52) over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer (40) may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.
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公开(公告)号：DE60318283D1
公开(公告)日：2008-02-07
申请号：DE60318283
申请日：2003-07-24
Applicant: INTEL CORP
Inventor： WANG LI-PENG , BAR-SADEH EYAL , RAO VALLURI , HECK JOHN , MA QING , TRAN QUAN , TALALYEVSKY ALEXANDER , GINSBURG EYAL
Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.
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公开(公告)号：AU2003272580A1
公开(公告)日：2004-04-19
申请号：AU2003272580
申请日：2003-09-17
Applicant: INTEL CORP
Inventor： WANG LI-PENG , MA QING , YANKOVICH ISRAEL , BUTLER RICHARD
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