公开(公告)号：WO2008002977A3

公开(公告)日：2008-03-06

申请号：PCT/US2007072241

申请日：2007-06-27

Applicant: LAM RES CORP ,  DORDI YEZDI ,  THIE WILLIAM ,  BOYD JOHN M ,  REDEKER FRITZ C ,  OWCZARZ ALEKSANDER

Inventor： DORDI YEZDI ,  THIE WILLIAM ,  BOYD JOHN M ,  REDEKER FRITZ C ,  OWCZARZ ALEKSANDER

IPC: C23C26/00 ,  B05D1/18

CPC classification number: H01L21/02074 ,  C23C18/1628 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S134/902

Abstract: An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

Abstract translation: 提供无电镀室。 化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。 底座具有沿着底座的内径限定的环形通道。 该腔室包括连接到环形通道的排水口。 排水口能够去除从卡盘收集的流体。 能够清洁和基本上干燥基板的接近头包括在腔室中。 还提供了一种执行化学镀操作的方法。

公开(公告)号：WO2006068958A3

公开(公告)日：2007-04-26

申请号：PCT/US2005045673

申请日：2005-12-16

Applicant: LAM RES CORP ,  MIKHAYLICHENKO KATRINA ,  YAKOVLEV VLADISLAV ,  RAVKIN MICHAEL ,  DE LARIOS JOHN M ,  REDEKER FRITZ C

Inventor： MIKHAYLICHENKO KATRINA ,  YAKOVLEV VLADISLAV ,  RAVKIN MICHAEL ,  DE LARIOS JOHN M ,  REDEKER FRITZ C

IPC: H01L21/00

CPC classification number: H01L21/31116 ,  B23K26/0069 ,  B23K26/40 ,  B23K2203/172 ,  H01L21/0209

Abstract: A substrate preparation method is provided. The method includes providing a substrate to be prepared. The substrate has a first layer and second layer. The first layer is to be removed from over the second layer. An energy frequency that is to be absorbed by the second layer while penetrating through the first layer transparently is determined. Energy that has the determined energy frequency is applied onto the first layer so as to disrupt a bond between the first layer and the second layer at a location of application of the energy. A portion of the first layer defined at the location of application of energy is removed. A substrate preparation apparatus is also provided.

Abstract translation: 提供了底物制备方法。 该方法包括提供待制备的基底。 衬底具有第一层和第二层。 第一层将从第二层上方移除。 确定在透过第一层时被第二层吸收的能量频率。 具有确定的能量频率的能量被施加到第一层上，以便在施加能量的位置处破坏第一层和第二层之间的结合。 去除在施加能量的位置限定的第一层的一部分。 还提供了基板制备装置。

公开(公告)号：MY157906A

公开(公告)日：2016-08-15

申请号：MYPI20090659

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： ALEXANDER YOON HYUNGSUK ,  BOYD JOHN M ,  YEZDI DORDI ,  REDEKER FRITZ C

IPC: B05D5/12

公开(公告)号：SG175593A1

公开(公告)日：2011-11-28

申请号：SG2011072816

申请日：2007-09-11

Applicant: LAM RES CORP

Inventor： THIE WILLIAM ,  BOYD JOHN M ,  DORDI YEZDI ,  REDEKER FRITZ C

Abstract: OF THE DISCLOSUREAn electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.Figure 2C

公开(公告)号：SG174751A1

公开(公告)日：2011-10-28

申请号：SG2011062189

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

Abstract: OF THE DISCLOSURE[109] The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.Figure 9A

公开(公告)号：SG174105A1

公开(公告)日：2011-09-29

申请号：SG2011062148

申请日：2007-08-15

Applicant: LAM RES CORP

Inventor： NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

Abstract: OF THE DISCLOSURE[53] The embodiments fill the need enabling deposition of a thin and conformal bather layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic bather layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic bather layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic bather layer.Figure 5D

公开(公告)号：MY144403A

公开(公告)日：2011-09-15

申请号：MYPI20083826

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/306

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.

公开(公告)号：SG169975A1

公开(公告)日：2011-04-29

申请号：SG2010097285

申请日：2006-12-18

Applicant: LAM RES CORP

Inventor： FREER ERIK M ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  MIKHAYLICHENKO KATRINA ,  REDEKER FRITZ C

Abstract: A method for making a solution for use in preparing a surface of a substrate is provided. The method includes providing a continuous medium that adds a polymer material to the continuous medium. A fatty acid is adding to the continuous medium having the polymer material, and the polymer material defines a physical network that exerts forces in the solution that overcome buoyancy forces experienced by the fatty acid, thus preventing the fatty acids from moving within the solution until a yield stress of the polymer material is exceeded by an applied agitation. The applied agitation is from transporting the solution from a container to a preparation station that applies the solution to the surface of the substrate.

公开(公告)号：MY147290A

公开(公告)日：2012-11-30

申请号：MYPI20111318

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/302

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.

公开(公告)号：SG174749A1

公开(公告)日：2011-10-28

申请号：SG2011062163

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

Abstract: OF THE DISCLOSURE[53] The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the bather layer metal-rich prior copper deposition and by limiting the amount of oxygen the bather layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the bather layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the bather layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic bather layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic bather layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic bather oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.Figure 5D