公开(公告)号：AU2015210451B2

公开(公告)日：2017-08-10

申请号：AU2015210451

申请日：2015-08-07

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  CALCATERRA ANTHONY ,  DUTTON DAVID ,  KAPUR PAWAN ,  SEUTTER SEAN ,  FATEMI HOMI

IPC: H01L21/205 ,  H01L31/04

Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport 5 system moves the workpiece positioned in a batch carrier plat through the controlled atmospheric region.

公开(公告)号：AU2016200610A1

公开(公告)日：2016-02-25

申请号：AU2016200610

申请日：2016-02-01

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：AU2013289151A1

公开(公告)日：2014-11-13

申请号：AU2013289151

申请日：2013-04-02

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  DUTTON DAVID ,  SEUTTER SEAN M ,  CALCATERRA ANTHONY ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L31/04 ,  H01L31/18

Abstract: According to one aspect of the disclosed subject matter, fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving front side surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.

公开(公告)号：MY184055A

公开(公告)日：2021-03-17

申请号：MYPI2014703566

申请日：2013-05-29

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：AU2016265969A1

公开(公告)日：2016-12-15

申请号：AU2016265969

申请日：2016-11-28

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  RANA VIRENDA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCAP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming thin film back contact solar cells are provided.

公开(公告)号：AU2015210451A1

公开(公告)日：2015-09-03

申请号：AU2015210451

申请日：2015-08-07

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  CALCATERRA ANTHONY ,  DUTTON DAVID ,  KAPUR PAWAN ,  SEUTTER SEAN ,  FATEMI HOMI

IPC: H01L21/205 ,  H01L31/04

Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport 5 system moves the workpiece positioned in a batch carrier plat through the controlled atmospheric region.

公开(公告)号：AU2013237992A1

公开(公告)日：2014-11-13

申请号：AU2013237992

申请日：2013-03-28

Applicant: SOLEXEL INC

Inventor： RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  COUTANT SOLENE ,  RATTLE BENJAMIN E ,  KRAMER KARL-JOSEF ,  KAPUR PAWAN

IPC: H01L31/042 ,  B23K26/36 ,  G01N21/65 ,  H01L31/18

Abstract: Methods and structures for fabricating photovoltaic back contact solar cells having multilevel metallization using laser via drilling end point detection are provided.

公开(公告)号：AU2013225860A1

公开(公告)日：2014-10-16

申请号：AU2013225860

申请日：2013-02-28

Applicant: SOLEXEL INC

Inventor： KAPUR PAWAN ,  MOSLEHI MEHRDAD M

IPC: H01L31/042 ,  H01L31/0735 ,  H01L31/18

Abstract: Methods and structures are provided for the growth and separation of a relatively thin layer crystalline compound semiconductor material containing III-V device layers, including but not limited to Gallium Arsenide (GaAs), on top of a crystalline silicon template wafer. Solar cell structures and manufacturing methods based on the crystalline compound semiconductor material are described.

公开(公告)号：AU2012294932A1

公开(公告)日：2014-03-27

申请号：AU2012294932

申请日：2012-08-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

公开(公告)号：WO2012135395A3

公开(公告)日：2013-02-07

申请号：PCT/US2012031043

申请日：2012-03-28

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。