-
11.发明专利
公开(公告)号：FR2946457A1
公开(公告)日：2010-12-10
申请号：FR0953766
申请日：2009-06-05
Inventor： COUDRAIN PERCEVAL , CORONEL PHILIPPE , BUFFET NICOLAS
IPC: H01L21/762 , H01L23/535
Abstract: L'invention concerne un procédé de formation d'un niveau d'une structure tridimensionnelle sur un premier support (30, 34) dans lequel sont formés des composants, comprenant les étapes suivantes : former, sur un deuxième support semiconducteur, un substrat semiconducteur monocristallin (36) avec interposition d'une couche d'oxyde thermique ; apposer la face libre du substrat semiconducteur monocristallin sur la surface supérieure du premier support ; éliminer le deuxième support semiconducteur ; et amincir la couche d'oxyde thermique jusqu'à une épaisseur propre à constituer un isolant de grille.
-
公开(公告)号：FR2915023A1
公开(公告)日：2008-10-17
申请号：FR0702696
申请日：2007-04-13
Applicant: ST MICROELECTRONICS CROLLES 2 , ST MICROELECTRONICS SA
Inventor： DUTARTRE DIDIER , CORONEL PHILIPPE , LOUBET NICOLAS
Abstract: Un procédé de réalisation de contacts métalliques auto-positionnés sur une plaque de produit semi-conducteur les emplacements respectifs des contacts métalliques étant déterminés par une étape de dépôt sélectif d'un matériau de croissance.
-
公开(公告)号：FR2845201B1
公开(公告)日：2005-08-05
申请号：FR0211989
申请日：2002-09-27
Applicant: ST MICROELECTRONICS SA
Inventor： CORONEL PHILIPPE , REGNIER CHRISTOPHE , WACQUANT FRANCOIS , SKOTNICKI THOMAS
IPC: H01L21/336 , H01L21/28
Abstract: The formation of a portion of a composite material from the elements of an initial material and a metal at the heart of an electronic circuit, comprises: (a) formation of a cavity (C) incorporating at least one opening (O) towards an access surface and presenting an internal wall having a zone of an initial material; (b) deposition of a metal (6) in the proximity of this zone of initial material; (c) heating of the circuit to form a portion of composite material (26) in the zone of initial material; (d) withdrawing from the cavity, via the opening, at least one portion of the metal not having formed the composite material. Independent claims are also included for: (a) an electronic circuit incorporating a portion of composite material formed by this method and acting as an electrical connection; (b) a MOS transistor incorporating a gate having a portion of composite material formed by this method.
-
公开(公告)号：FR2838866A1
公开(公告)日：2003-10-24
申请号：FR0205073
申请日：2002-04-23
Applicant: ST MICROELECTRONICS SA
Inventor： CORONEL PHILIPPE , LEVERD FRANCOIS , SKOTNICKI THOMAS
IPC: H01L21/02 , H01L21/3213 , H01L21/336 , H01L21/68 , H01L21/762 , H01L21/8242 , H01L23/544 , H01L27/12 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/40 , H01L21/70 , H01L27/108
Abstract: Fabrication of an integrated electronic component comprises: producing an initial structure (SI) incorporating volumes of respective materials forming a definite pattern (M) on a first substrate; transferring the pattern to a second substrate (200); and producing, on the second substrate surface, an additional structure by using the volumes of the materials of the pattern as alignment markers. Fabrication of an integrated electronic component comprises: (a) producing, on the surface of a first substrate (100), an initial structure (SI) incorporating volumes of respective materials, at least part of the volumes forming a definite pattern (M); (b) transferring at least a part of the initial structure (SI) comprising the pattern of the first substrate (100) to a second substrate (200); and (c) producing, on the surface of the second substrate (200), an additional structure by using at least some of the volumes of the materials of the pattern (M) as alignment markers. Independent claims are given for: (i) an integrated electronic component obtained by the invented process; and (ii) an electronic device comprising a transistor, or a diode, or a dynamic random access memory (DRAM) element.
-
公开(公告)号：FR2830984A1
公开(公告)日：2003-04-18
申请号：FR0113375
申请日：2001-10-17
Applicant: ST MICROELECTRONICS SA
Inventor： MARTY MICHEL , LEVERD FRANCOIS , CORONEL PHILIPPE , TORRES JOAQUIM
IPC: H01L21/762 , H01L21/764
-
Patent Agency Ranking
公开(公告)号：FR2821208B1
公开(公告)日：2003-04-11
申请号：FR0102347
申请日：2001-02-21
Applicant: ST MICROELECTRONICS SA
Inventor： CORONEL PHILIPPE , LEVERD FRANCOIS , FERREIRA PAUL
IPC: H01L21/60 , H01L21/768 , H01L23/52 , H01L21/8239
Abstract: The invention relates to a process for protection of the grid of a transistor in an integrated circuit for production of a local interconnection pad straddling over the grid and the silicon substrate on which it is formed. The process consists of applying a double dielectric-conducting layer on the transistor grid into which a polysilicon layer is added in order to use the selectivity principle, which is large considering the etching of polysilicon with respect to the oxide in which the local interconnection pad is formed. Furthermore, with the process according to the invention, a silicidation treatment can be applied beforehand on the active areas of the transistor and the grid.
-
公开(公告)号：FR2830124A1
公开(公告)日：2003-03-28
申请号：FR0112377
申请日：2001-09-26
Applicant: ST MICROELECTRONICS SA
Inventor： PIAZZA MARC , CORONEL PHILIPPE
IPC: H01L21/8242 , H01L27/108
Abstract: Two trenches are dug into an upper insulating layer in such a way that one trench has a width twice that of another trench having a minimum width. The neighboring trenches are separated by a minimum interval and each of the trenches are surrounded with two of the other trenches, respectively. An Independent claim is also included for a dynamic random access memory.
-
公开(公告)号：FR2819633A1
公开(公告)日：2002-07-19
申请号：FR0100691
申请日：2001-01-18
Applicant: ST MICROELECTRONICS SA
Inventor： CORONEL PHILIPPE , PIAZZA MARC , LEVERD FRANCOIS
IPC: H01L21/8242 , H01L27/108
Abstract: A method for the integration of a Dynamic Random Access Memory (DRAM), allowing a freedom from the alignment margins inherent in the photoengraving of the upper electrode for the contact passage of the bit line, the retreat of the upper electrode being auto-aligned on the lower electrode, consists of: (a) forming a topographical difference at the spot (A) where the opening for the upper electrode is to be realised; (b) depositing a layer of non-doped polysilicon on the upper electrode; (c) producing an implantation of strongly inclined doping in this layer; (d) selectively engraving the non-doped part of the layer situated in the lower part of the zone (A) presenting the topographical difference; (e) and engraving the remaining part of the polysilicon layer as well as the upper electrode layer situated in the lower part.
-
公开(公告)号：FR2982424A1
公开(公告)日：2013-05-10
申请号：FR1160209
申请日：2011-11-09
Applicant: COMMISSARIAT ENERGIE ATOMIQUE , ST MICROELECTRONICS SA
Inventor： SAVELLI GUILLAUME , CORONEL PHILIPPE , GAILLARD FREDERIC , MONFRAY STEPHANE
IPC: H01L37/00
Abstract: Système de conversion d'énergie thermique en énergie électrique (S1) destiné à être disposé entre une source chaude (SC) et une source froide (SF) , comportant des moyens de conversion de l'énergie thermique en énergie mécanique (6) et un matériau piézoélectrique, les moyens de conversion de l'énergie thermique en énergie mécanique (6) comportant des groupes (G1, G2 ) de au moins trois bilames (9, 11, 13) reliés mécaniquement entre eux par leur extrémités longitudinales et suspendus au-dessus d'un substrat (12), chaque bilame (9, 11, 13) comportant deux états stables dans lesquels il présente dans chacun des états une courbure, deux bilames directement adjacentes (9, 11, 13) présentant pour une température donnée des courbures opposées, le passage d'un état à stable des bilames (9, 11, 13) à l'autre provoquant la déformation d'un matériau piézoélectrique.
-
20.发明专利
公开(公告)号：FR2946457B1
公开(公告)日：2012-03-09
申请号：FR0953766
申请日：2009-06-05
Inventor： COUDRAIN PERCEVAL , CORONEL PHILIPPE , BUFFET NICOLAS
IPC: H01L21/762 , H01L23/535
-
-
-
-
-
-
-
-
-
Search Results
55
records
(took 0.03 seconds)
