公开(公告)号：ITTO20040244A1

公开(公告)日：2004-07-20

申请号：ITTO20040244

申请日：2004-04-20

Applicant: ST MICROELECTRONICS SRL

Inventor： DEPETRO RICCARDO ,  MONTANINI PIETRO ,  PONZA ANNA

IPC: H01L21/78

公开(公告)号：DE69415987T2

公开(公告)日：1999-06-24

申请号：DE69415987

申请日：1994-11-08

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  DEPETRO RICCARDO

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/41

Abstract: An integrated device presenting a structure for protection against electric fields. The protection structure is formed by a first region of conducting material (34) connected electrically to the gate/source region (6) of the device and at a first potential, and by a second region of conducting material (35) connected electrically to the drain region (15) of the device and at a second potential differing from the first. The first region of conducting material (34) is comb-shaped, and presents a first number of fingers (32) separated by a number of gaps; and the second region of conducting material (35) presents portions (33) extending at the aforementioned number of gaps and also forming a comb structure, so that the body of semiconductor material (1) of the device sees a protection region formed by a pair of interlocking comb structures and at an intermediate potential between the first and second potentials.

公开(公告)号：IT201600088211A1

公开(公告)日：2018-03-02

申请号：IT201600088211

申请日：2016-08-30

Applicant: ST MICROELECTRONICS SRL

Inventor： SAMBI MARCO ,  TOIA FABRIZIO FAUSTO RENZO ,  MARCHESI MARCO ,  MORELLI MARCO ,  DEPETRO RICCARDO ,  BARILLARO GIUSEPPE ,  STRAMBINI LUCANOS MARSILIO

IPC: H01L29/32 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861

公开(公告)号：ITTO20090550A1

公开(公告)日：2011-01-22

申请号：ITTO20090550

申请日：2009-07-21

Applicant: ST MICROELECTRONICS SRL

Inventor： DEPETRO RICCARDO ,  MANZINI STEFANO

公开(公告)号：DE69522936T2

公开(公告)日：2002-08-29

申请号：DE69522936

申请日：1995-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： DEPETRO RICCARDO ,  NOVELLI ALDO

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/06 ,  H01L29/739

公开(公告)号：DE69522936D1

公开(公告)日：2001-10-31

申请号：DE69522936

申请日：1995-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： DEPETRO RICCARDO ,  NOVELLI ALDO

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/06 ,  H01L29/739

公开(公告)号：DE69522926D1

公开(公告)日：2001-10-31

申请号：DE69522926

申请日：1995-05-02

Applicant: ST MICROELECTRONICS SRL

Inventor： DEPETRO RICCARDO ,  CONTIERO CLAUDIO ,  ANDREINI ANTONIO

IPC: H01L21/8238 ,  H01L27/06 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/00

Abstract: N-channel LDMOS and p-channel MOS devices for high voltage integrated in a BiCMOS integrated circuit and exploiting a RESURF condition are provided with a buried region of the same type of conductivity of the epitaxial layer and a doping level intermediate between the doping level of the epitaxial layer and of a source or drain region, respectively, of the high voltage complementary MOS devices. The devices may be configured as source or drain followers without problems.

公开(公告)号：DE69415987D1

公开(公告)日：1999-02-25

申请号：DE69415987

申请日：1994-11-08

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  DEPETRO RICCARDO

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/41

Abstract: An integrated device presenting a structure for protection against electric fields. The protection structure is formed by a first region of conducting material (34) connected electrically to the gate/source region (6) of the device and at a first potential, and by a second region of conducting material (35) connected electrically to the drain region (15) of the device and at a second potential differing from the first. The first region of conducting material (34) is comb-shaped, and presents a first number of fingers (32) separated by a number of gaps; and the second region of conducting material (35) presents portions (33) extending at the aforementioned number of gaps and also forming a comb structure, so that the body of semiconductor material (1) of the device sees a protection region formed by a pair of interlocking comb structures and at an intermediate potential between the first and second potentials.

公开(公告)号：ITVI20110246A1

公开(公告)日：2013-03-15

申请号：ITVI20110246

申请日：2011-09-14

Applicant: ST MICROELECTRONICS SRL

Inventor： DEPETRO RICCARDO ,  ERRATICO PIETRO

公开(公告)号：ITMI20052140A1

公开(公告)日：2007-05-11

申请号：ITMI20052140

申请日：2005-11-10

Applicant: ST MICROELECTRONICS SRL

Inventor： ANNESE MARCO ,  DEPETRO RICCARDO ,  MONTANINI PIETRO