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公开(公告)号：JPH11142270A
公开(公告)日：1999-05-28
申请号：JP19212398
申请日：1998-07-07
Applicant: ST MICROELECTRONICS SRL
Inventor： FERRARI PAOLO , VIGNA BENEDETTO , VILLA FLAVIO
Abstract: PROBLEM TO BE SOLVED: To provide an integrated piezoresistive pressure sensor having a diaphragm made of a polycrystalline semiconductor material. SOLUTION: This pressure sensor has a semiconductor material singlecrystal substrate 21, a semiconductor material layer 28 on this substrate 21, a gap 55 arranged between the substrate 21 and semiconductor layer 28, and at least one opening part 53 which extends between the reverse outside surface 52 of the substrate 21 and the gap 55. This semiconductor material layer 28 is formed of a polycrystal area 29 forming the diaphragm above the gap 55 and another single-crystal material layer 30. The piezoresistance element 46 extends above the semiconductor layer 28 and is insulated from there at the lateral limit setting edge of the diaphragm 29 by a dielectric layer 45 and mutually connected to form a Wheaston bridge, so pressure applied onto the sensor can be measured from its unbalance.
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12.发明专利
公开(公告)号：JPH11108874A
公开(公告)日：1999-04-23
申请号：JP15452098
申请日：1998-06-03
Applicant: ST MICROELECTRONICS SRL
Inventor： VIGNA BENEDETTO , FERRARI PAOLO , MASTROMATTEO UBALDO
IPC: G01N27/12
Abstract: PROBLEM TO BE SOLVED: To provide a chemical-resistant gas sensor not requiring silicon excavation work and a process for producing the same. SOLUTION: An integrated semiconductor device 1 has thermal insulating regions 3, 11, a heat conductive region 25 composed of material quality high in heat conductivity, a passivation oxide layer 30 and a gas responding element 34 in a mutually superposed state. The heat conductive region 25 defines the selective route going toward the gas responding element 34 because of the heat formed by a heating element 20 and, therefore, at a time of the operation of the device 1, the heat diffused toward substrates 2, 3 can be neglected.
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公开(公告)号：JPH06303047A
公开(公告)日：1994-10-28
申请号：JP5275094
申请日：1994-02-24
Applicant: ST MICROELECTRONICS SRL
Inventor： BOTTI EDOARDO , FASSINA ANDREA , FERRARI PAOLO
IPC: H03F1/52
Abstract: PURPOSE: To protect a power transistor TR of an output stage functionally connected between an output node and a supply rail by short-circuiting the base-emitter junction of a TR under a reverse bias condition on the occurrence of an SPU condition. CONSTITUTION: This device comprises a TR QS which has the emitter connected to a base B1 of a power TR Q1 and has the collector connected to an output node Out and has the base B2 connected to a supply rail Vcc of an amplification circuit. While the device normally functions, the protection TR QS of the same type as the power TR Q1 to be protected is turned off because the potential on the base (node B2 ) is higher than that existing on emitter and collector nodes E and C. Actually, the base potential is practically equal to the supply voltage Vcc of the amplifier.
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公开(公告)号：DE69632950D1
公开(公告)日：2004-08-26
申请号：DE69632950
申请日：1996-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor： FORONI MARIO , FERRARI PAOLO , VIGNA BENEDETTO , VILLA FLAVIO
IPC: G01L1/18 , B81B3/00 , B81B7/02 , B81C1/00 , G01L9/00 , G01P15/02 , G01P15/08 , H01L21/306 , H01L21/764 , H01L29/84 , H01L21/00 , H01L21/762
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公开(公告)号：DE69726718D1
公开(公告)日：2004-01-22
申请号：DE69726718
申请日：1997-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor： FERRARI PAOLO , VIGNA BENEDETTO , MONTANINI PIETRO , FERRERA MARCO
IPC: G01P9/04 , B81B3/00 , G01C19/56 , G01P15/08 , G01P15/125 , H01L21/762 , H01L21/764 , H01L41/08
Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).
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Patent Agency Ranking
公开(公告)号：DE69724100D1
公开(公告)日：2003-09-18
申请号：DE69724100
申请日：1997-05-28
Applicant: ST MICROELECTRONICS SRL
Inventor： VILLA FLAVIO FRANCESCO , VIGNA BENEDETTO , FERRARI PAOLO
IPC: G01D5/34
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公开(公告)号：DE69627645D1
公开(公告)日：2003-05-28
申请号：DE69627645
申请日：1996-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor： VIGNA BENEDETTO , FERRARI PAOLO , VILLA FLAVIO
Abstract: The pressure sensor is integrated in a SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements (10) and the electronic components (4, 6-8) integrated in the same chip, trenches (26) are formed in the upper wafer (23) of the substrate and extending from the surface to the layer of insulating material (22); the layer of insulating material (22) is chemically etched through the trenches (26) to form an opening (31) beneath the diaphragm (27); and a dielectric layer (25) is deposited to outwardly close the trenches (26) and the opening (31). Thus, the process is greatly simplified, and numerous packaging problems eliminated.
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公开(公告)号：DE69617674T2
公开(公告)日：2002-08-08
申请号：DE69617674
申请日：1996-09-10
Applicant: ST MICROELECTRONICS SRL
Inventor： VIGNA BENEDETTO , FERRARI PAOLO , MASTROMATTEO UBALDO
Abstract: An acceleration sensor is described which is formed by planar technology on a substrate (10). It includes a core (11) of ferromagnetic material and, coupled conductively together by the core, a first winding (13) adapted to be connected to a power supply (14) and a second winding (15) adapted to be connected to circuit means (16) for measuring an electrical magnitude induced therein. The core (11) has two suspended portions which are free to bend as a result of an inertial force due to an accelerative movement of the sensor itself. The bending causes lengthening of the core (11) and hence a variation in the reluctance of the magnetic circuit. If a constant current is supplied to the first winding (13), a voltage is induced in the second winding (15) as a result of the variation in the magnetic flux caused by the variation in reluctance.
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公开(公告)号：DE69632950T2
公开(公告)日：2005-08-25
申请号：DE69632950
申请日：1996-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor： FORONI MARIO , FERRARI PAOLO , VIGNA BENEDETTO , VILLA FLAVIO
IPC: G01L1/18 , B81B3/00 , B81B7/02 , B81C1/00 , G01L9/00 , G01P15/02 , G01P15/08 , H01L21/306 , H01L21/764 , H01L29/84 , H01L21/00 , H01L21/762
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公开(公告)号：DE69726718T2
公开(公告)日：2004-10-07
申请号：DE69726718
申请日：1997-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor： FERRARI PAOLO , VIGNA BENEDETTO , MONTANINI PIETRO , FERRERA MARCO
IPC: G01P9/04 , B81B3/00 , G01C19/56 , G01P15/08 , G01P15/125 , H01L21/762 , H01L21/764 , H01L41/08
Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).
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