公开(公告)号：BR112013001774A2

公开(公告)日：2016-05-31

申请号：BR112013001774

申请日：2010-10-15

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  MITCHELL CRAIG ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH ,  OGANESIAN VAGE

IPC: H05K5/00

Abstract: unidade de microeletrônica, conjunto microeletrônico, métodos de fabricação de uma unidade de microeletrônica e de fabricação de um conjunto empilhado de unidades microeletrônicas, e, sistema. é divulgada uma unidade de microeletrônica que inclui uma estrutura de suporte com uma superfície frontal, uma superfície traseira remota em relação à superfície frontal, e um rebaixo com uma abertura na superfície frontal e uma superfície interna localizada abaixo da superfície frontal da estrutura de suporte. a unidade de microeletrônica pode incluir um elemento microeletrônico com uma superfície de base adjacente à superfície interna, uma superfície de topo remota em relação à superfície de base e uma pluralidade de contatos na superfície de topo. o elemento microeletrônico pode incluir terminais eletricamente conectados nos contatos do elemento microeletrônico. a unidade de microeletrônico pode incluir uma região dielétrica que contata pelo menos a superfície de topo do elemento microeletrônico. a região dielétrica pdoe ter uma superfície plana localizadacoplanar em relação à superfície frontal da estrutura de suporte, ou acima dela. os terminais podem ficar expostos na superfície da região dielétrica para interconexão com um elemento externo.

公开(公告)号：AU2415500A

公开(公告)日：2000-08-01

申请号：AU2415500

申请日：2000-01-19

Applicant: TESSERA INC

Inventor： HABA BELGACEM

IPC: H01L21/60 ,  H01L23/498 ,  H05K3/34 ,  B23K31/02 ,  H01L23/495

Abstract: A microelectronic connection component is provided with leads having a surface wettable by a bonding material such as a solder at the tips of the leads which are intended to be bonded with microelectronic devices. The leads have non-wettable surfaces bounding the wettable surfaces. During bonding, the non-wettable surfaces confine liquid bonding material such as liquid solder and prevent the liquid bonding material from spreading along the leads.

公开(公告)号：EP2183770A4

公开(公告)日：2010-08-04

申请号：EP08795005

申请日：2008-07-31

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  HUMPSTON GILES ,  MARGALIT MOTI

IPC: H01L21/60 ,  H01L23/12

CPC classification number: H01L21/76898 ,  H01L21/76805 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/12 ,  H01L24/18 ,  H01L24/82 ,  H01L24/95 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/2518 ,  H01L2224/82039 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A microelectronic unit 400 can include a semiconductor element 401 having a front surface, a microelectronic semiconductor device adjacent to the front surface, contacts 403 at the front surface and a rear surface remote from the front surface. The semiconductor element 401 can have through holes 410 extending from the rear surface through the semiconductor element 401 and through the contacts 403. A dielectric layer 411 can line the through holes 410. A conductive layer 412 may overlie the dielectric layer 411 within the through holes 410. The conductive layer 412 can conductively interconnect the contacts 403 with unit contacts.

Abstract translation: 微电子单元400可以包括具有前表面的半导体元件401，与前表面相邻的微电子半导体器件，在前表面处的触点403和远离前表面的后表面。 半导体元件401可以具有从后表面延伸穿过半导体元件401并穿过触点403的通孔410.电介质层411可以将通孔410排成线。导电层412可以覆盖通孔内的电介质层411 410.导电层412可以将触点403与单元触点导电地互连。

公开(公告)号：EP1059019A4

公开(公告)日：2007-10-17

申请号：EP99905891

申请日：1999-02-09

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  ESLAMPOUR HAMID ,  KARAVAKIS KONSTANTINE

IPC: H05K3/32 ,  H01L21/48 ,  H01L21/60 ,  H01L23/13 ,  H01L23/32 ,  H01L23/48 ,  H01L23/498 ,  H05K3/40 ,  H05K3/30 ,  H01R9/09

CPC classification number: H05K3/4092 ,  H01L21/4846 ,  H01L23/13 ,  H01L23/49811 ,  H01L23/4985 ,  H01L24/13 ,  H01L24/72 ,  H01L24/81 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/1903 ,  H01L2924/3011

Abstract: A microelectronic component is made by providing a starting structure having a dielectric layer (22) and leads on a surface of the dielectric layer. The dielectric layer is etched to partially detach the leads (24) from the dielectric layer, leaving a portion of each lead releasably connected to the dielectric layer. Ends of the leads (24) may be connected to contacts (52) on a microelectronic element (50), such as the contacts on a semiconductor chip or wafer, before the dielectric layer (22) is etched to partially detach the leads (24) from the dielectric layer. The lead is partially detached from the dielectric layer so that the dielectric layer can be broken or peeled away from the leads during the step of moving the microelectronic element (50) and dielectric layer (22) away from one another.

公开(公告)号：EP2596689A4

公开(公告)日：2017-07-26

申请号：EP10855121

申请日：2010-10-15

Applicant: TESSERA INC

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MITCHELL CRAIG ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH

IPC: H01L21/60 ,  H01L21/98 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10

CPC classification number: H01L21/76819 ,  H01L21/76877 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/4985 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L25/105 ,  H01L25/117 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/24227 ,  H01L2224/24247 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01061 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15165 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/18161 ,  Y10T29/49002 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/82 ,  H01L2224/83

Abstract: A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.

Abstract translation: 微电子单元包括具有前表面，远离前表面的后表面和在前表面处具有开口的凹槽以及位于载体结构的前表面下方的内表面的载体结构。 微电子单元可以包括具有与内表面相邻的底表面，远离底表面的顶表面和在顶表面处的多个触点的微电子元件。 微电子元件可以包括与微电子元件的触点电连接的端子。 微电子单元可以包括至少接触微电子元件的顶表面的介电区域。 电介质区域可以具有与载体结构的前表面共平面或在其上方的平面表面。 端子可以暴露在介电区域的表面处以与外部元件互连。

公开(公告)号：EP2176882A4

公开(公告)日：2014-04-16

申请号：EP08779889

申请日：2008-06-27

Applicant: TESSERA INC

Inventor： HABA BELGACEM

IPC: H01L23/28 ,  H01L21/48 ,  H01L23/13 ,  H01L23/49 ,  H01L23/498

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/13 ,  H01L23/49861 ,  H01L24/16 ,  H01L24/28 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: Microelectronic package elements and packages having dielectric layers and methods of fabricating such elements packages are disclosed. The elements and packages may advantageously be used in microelectronic assemblies having high routing density.

公开(公告)号：EP1206325A4

公开(公告)日：2006-08-02

申请号：EP00954052

申请日：2000-08-11

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  SMITH JOHN W

IPC: H05K3/40 ,  B05D5/12 ,  H01L21/48 ,  H01L21/60 ,  H01L21/768 ,  H01L23/12 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H05K3/46

CPC classification number: H05K3/4076 ,  H01L21/486 ,  H01L2924/0002 ,  H05K2203/083 ,  H05K2203/085 ,  H05K2203/1105 ,  H01L2924/00

Abstract: Electrical connections are made between a pair of elements (32, 38) disposed on opposite side of a hole (28) extending through a dielectric layer (20) by evaporating a conductive material (40) such as a metal having high vapor pressure within the hole while maintaining the hole in a substantially sealed condition. The process may be performed simultaneously to form numerous connections within a microelectronic unit as, for example, within a multilayer circuit panel.

公开(公告)号：EP2596520A4

公开(公告)日：2017-07-05

申请号：EP10855116

申请日：2010-10-13

Applicant: TESSERA INC

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06166 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81801 ,  H01L2224/8182 ,  H01L2224/8185 ,  H01L2224/94 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/81

公开(公告)号：EP2213148A4

公开(公告)日：2011-09-07

申请号：EP08837045

申请日：2008-10-08

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  OGANESIAN VAGE ,  ENDO KIMITAKA

IPC: H05K3/46 ,  H01L23/12 ,  H01L23/48

CPC classification number: H01L21/486 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/24226 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/185 ,  H05K3/0038 ,  H05K3/4038 ,  H05K3/4647 ,  H05K3/4652 ,  H05K2201/0355 ,  H05K2201/0361 ,  H05K2201/0382 ,  H05K2201/096 ,  H05K2203/0384 ,  H05K2203/0733 ,  H05K2203/1189 ,  H01L2924/00

Abstract: An interconnect element 130 can include a dielectric layer 116 having a top face 116b and a bottom face 116a remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, or both, can include a plurality of conductive traces 132, 134. A plurality of conductive protrusions 112 can extend upwardly from the plane defined by the first metal layer 102 through the dielectric layer 116. The conductive protrusions 112 can have top surfaces 126 at a first height 115 above the first metal layer 132 which may be more than 50% of a height of the dielectric layer. A plurality of conductive vias 128 can extend from the top surfaces 126 of the protrusions 112 to connect the protrusions 112 with the second metal layer.

Abstract translation: 互连元件130可以包括具有顶面116b和远离顶面的底面116a的电介质层116，限定沿着底面延伸的平面的第一金属层和沿着顶面延伸的第二金属层。 第一或第二金属层之一或两者可以包括多个导电迹线132,134。多个导电突起112可以从由第一金属层102限定的平面向上延伸穿过电介质层116.导电 突起112可以具有在第一金属层132上方的第一高度115处的顶表面126，其可以大于电介质层的高度的50％。 多个导电通孔128可以从突起112的顶表面126延伸，以将突起112与第二金属层连接。

公开(公告)号：EP2172089A4

公开(公告)日：2011-08-10

申请号：EP08779797

申请日：2008-06-23

Applicant: TESSERA INC

Inventor： HABA BELGACEM

IPC: H05K3/46

CPC classification number: H05K3/4007 ,  H01L21/4853 ,  H01L23/49811 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/181 ,  H05K3/06 ,  H05K3/4652 ,  H05K2201/0355 ,  H05K2201/0361 ,  H05K2203/0384 ,  Y10T29/49144 ,  Y10T29/49165 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method of forming contacts for an interconnection element, includes (a) joining a conductive element to an interconnection element having multiple wiring layers, (b) patterning the conductive element to form conductive pins, and (c) electrically interconnecting the conductive pins with conductive features of the interconnection element. A multiple wiring layer interconnection element having an exposed pin interface, includes an interconnection element having multiple wiring layers separated by at least one dielectric layer, the wiring layers including a plurality of conductive features exposed at a first face of the interconnection element, a plurality of conductive pins protruding in a direction away from the first face, and metal features electrically interconnecting the conductive features with the conductive pins.