公开(公告)号：EP3008747A1

公开(公告)日：2016-04-20

申请号：EP14729916.8

申请日：2014-06-13

Applicant: IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik

Inventor： MEHR, Wolfgang ,  WOLFF, André

IPC: H01J37/073

CPC classification number: C23F4/00 ,  B81C1/00111 ,  C23C16/50 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/32963 ,  H01J37/32981 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/3081

Abstract: The invention relates to a method for producing at least one nanotip from a tip material, comprising providing a substrate (210) which consists of the tip material or has said material in the form of a coating, producing a mask from a mask material (220), wherein the mask material is selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, and carrying out the reactive ion etching process in an etching chamber, wherein mask materials are additionally selected so that a gaseous component (230) is released from the mask material during the reactive ion etching process, said gaseous component not being released from the tip material during the reactive ion etching process, and wherein the method furthermore comprises the steps of detecting the gaseous component while the ion etching process is carried out, repeatedly determining during the ion etching process whether a quantity of the gaseous component in the etching chamber reaches a predefined lower threshold, and as soon as the lower threshold is reached: stopping the reactive ion etching process.

公开(公告)号：WO2012035277A1

公开(公告)日：2012-03-22

申请号：PCT/FR2011/052135

申请日：2011-09-16

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) ,  MONTHIOUX, Marc ,  HOUDELLIER, Florent

Inventor： MONTHIOUX, Marc ,  HOUDELLIER, Florent

IPC: H01J37/073 ,  H01J37/28 ,  H01J1/304

CPC classification number: H01J29/485 ,  B82Y20/00 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J37/073 ,  H01J37/28 ,  H01J2201/30411 ,  H01J2201/30415 ,  H01J2201/30426 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/26

Abstract: Cette invention concerne un canon à électrons à émission de champ comportant une pointe d'émission d'électrons, une anode extractrice, ainsi que des moyens permettant de créer une différence de potentiel électrique entre la pointe d'émission et l'anode extractrice. La pointe d'émission comporte une pointe métallique et un cône d'extrémité obtenu par dépôt chimique en phase vapeur sur un nanofilament, le cône étant aligné et soudé sur la pointe métallique. Application à un microscope électronique en transmission.

Abstract translation: 本发明涉及一种场发射电子枪，其包括电子发射尖端，提取器阳极，以及用于在发射尖端和提取器阳极之间产生电位差的装置。 发射尖端包括金属尖端和通过化学气相沉积在纳米丝上产生的端锥，锥体对准并焊接到金属尖端上。 本发明可用于透射电子显微镜。

公开(公告)号：EP2617049A1

公开(公告)日：2013-07-24

申请号：EP11773106.7

申请日：2011-09-16

Applicant: Centre National de la Recherche Scientifique CNRS

Inventor： MONTHIOUX, Marc ,  HOUDELLIER, Florent

IPC: H01J37/073 ,  H01J37/28 ,  H01J1/304

CPC classification number: H01J29/485 ,  B82Y20/00 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J37/073 ,  H01J37/28 ,  H01J2201/30411 ,  H01J2201/30415 ,  H01J2201/30426 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/26

Abstract: The invention relates to a field-emission electron gun comprising an electron emission tip, an extractor anode, as well as a means for creating an electric-potential difference between the emission tip and the extractor anode. The emission tip comprises a metal tip and an end cone produced by chemical vapour deposition on a nanofilament, the cone being aligned and welded onto the metal tip. The invention can be used for a transmission electron microscope.

Abstract translation: 包括电子发射尖端，提取器阳极和在发射尖端和提取器阳极之间产生电位差的机构的场致发射电子枪。 发射尖端包括通过化学气相沉积在纳米丝上产生的金属尖端和端锥，锥体对准并焊接到金属尖端上。 电子枪可用于透射电子显微镜。

公开(公告)号：EP2304762A1

公开(公告)日：2011-04-06

申请号：EP09769091.1

申请日：2009-05-29

Applicant: Paul Scherrer Institut

Inventor： TSUJINO, Soichiro ,  KIRK, Eugenie

IPC: H01J9/02 ,  H01J1/304 ,  H01J37/073

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30411 ,  H01J2209/0223

Abstract: A methodof manufacturing field-emitter arrays by a molding technique is described, wherein the shape of the mold holes (113) is uniformly controlled to obtain field emitter tips having diameters below 100 nm and blunted side edges. The method utilizes the repeated oxidation and etching of the mold substrate (101) consisting of single-crystal semiconductor mold wafers, where the mold holes (110) for individual emitters are fabricated by utilizing the crystal orientation dependence of the etching rate.

公开(公告)号：JP2009107105A

公开(公告)日：2009-05-21

申请号：JP2008047646

申请日：2008-02-28

Applicant: Academia Sinica ,  アカデミア シニカAcademia Sinica

Inventor： KAKU KOGI ,  HWANG ING-SHOUH ,  TEI TENSA ,  FU SOI

IPC: B82B3/00 ,  G01Q60/16 ,  H01J1/304 ,  H01J9/02 ,  H01J37/073 ,  H01J37/08

CPC classification number: G01Q60/16 ,  C21D9/26 ,  C21D2201/04 ,  C22F1/14 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3056 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2209/0226 ,  H01J2237/06 ,  H01J2237/08 ,  H01J2237/0807 ,  H01J2237/3114 ,  Y10S977/848 ,  Y10S977/90 ,  Y10S977/949 ,  Y10S977/95 ,  Y10T428/12389

Abstract: PROBLEM TO BE SOLVED: To provide a method for preparing an iridium tip with atomic sharpness. SOLUTION: The method includes steps of tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also an iridium needle is provided which has a pyramidal structure which terminates with a small number of atoms. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 待解决的问题：提供一种制备原子锐度的铱尖的方法。 解决方案：该方法包括将铱丝细丝化成针状并在氧气氛中加热铱针的步骤。 还提供了具有以少量原子终止的锥体结构的铱针。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：US09984846B2

公开(公告)日：2018-05-29

申请号：US15217158

申请日：2016-07-22

Applicant: KLA-Tencor Corporation

Inventor： William G. Schultz ,  Gildardo R. Delgado ,  Frances Hill ,  Edgardo Garcia Berrios ,  Rudy Garcia

IPC: H01J1/34 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24

CPC classification number: H01J1/3044 ,  H01J1/34 ,  H01J9/025 ,  H01J19/24 ,  H01J19/82 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2201/30492 ,  H01J2209/0223

Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 μm or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 μm or less.

公开(公告)号：US09873949B2

公开(公告)日：2018-01-23

申请号：US14897769

申请日：2014-06-13

Applicant: IHP GmbH-Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative Mikroelektronik

Inventor： Wolfgang Mehr ,  Andre Wolff

IPC: B44C1/22 ,  C23F4/00 ,  H01J37/073 ,  H01J1/304 ,  H01J9/02 ,  H01J37/32 ,  B81C1/00 ,  C23C16/50 ,  H01L21/3065 ,  H01L21/308

CPC classification number: C23F4/00 ,  B81C1/00111 ,  C23C16/50 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/32963 ,  H01J37/32981 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/3081

Abstract: A method for producing a nanotip from a tip material provides a substrate which consists of the tip material or has the material in the form of a coating, produces a mask from a mask material selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, and carries out the reactive ion etching process in an etching chamber. The mask material is additionally selected so that a gaseous component is released therefrom during the reactive ion etching process, the gaseous component not being released from the tip material. The method further comprises detecting the gaseous component while the ion etching process is being carried out, repeatedly determining whether an amount of the gaseous component in the etching chamber reaches a predefined lower threshold, and stopping the reactive ion etching process when the lower threshold is reached.

公开(公告)号：US20180005791A1

公开(公告)日：2018-01-04

申请号：US15217158

申请日：2016-07-22

Applicant: KLA-Tencor Corporation

Inventor： William G. Schultz ,  Gildardo R. Delgado ,  Frances Hill ,  Edgardo Garcia Berrios ,  Rudy Garcia

IPC: H01J1/304 ,  H01J19/24 ,  H01J1/34 ,  H01J9/02

CPC classification number: H01J1/3044 ,  H01J1/34 ,  H01J9/025 ,  H01J19/24 ,  H01J19/82 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2201/30492 ,  H01J2209/0223

Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 μm or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 μm or less.

公开(公告)号：US20160181051A1

公开(公告)日：2016-06-23

申请号：US14947773

申请日：2015-11-20

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J9/02 ,  H01J1/308

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

Abstract translation: 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。

公开(公告)号：US20120007490A1

公开(公告)日：2012-01-12

申请号：US12959601

申请日：2010-12-03

Applicant: PENG LIU ,  DUAN-LIANG ZHOU ,  PI-JIN CHEN ,  ZHAO-FU HU ,  CAI-LIN GUO ,  BING-CHU DU ,  SHOU-SHAN FAN

Inventor： PENG LIU ,  DUAN-LIANG ZHOU ,  PI-JIN CHEN ,  ZHAO-FU HU ,  CAI-LIN GUO ,  BING-CHU DU ,  SHOU-SHAN FAN

IPC: H01J21/10

CPC classification number: H01J31/127 ,  H01J1/3044 ,  H01J29/04 ,  H01J2201/30411 ,  H01J2329/0415

Abstract: An ion source using a field emission device is provided. The field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.

Abstract translation: 提供了使用场发射装置的离子源。 场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。 电子牵引电极位于绝缘基板的表面上。 二次电子发射层位于电子牵拉电极的表面上。 阴极通过第一介电层与电子牵拉电极分开。 阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。 电子发射层位于阴极表面并且定向到电子牵引电极。