公开(公告)号：EP2370346A2

公开(公告)日：2011-10-05

申请号：EP09805956.1

申请日：2009-11-25

Applicant: Freescale Semiconductor, Inc. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： PERRUCHOT, François ,  DEFAY, Emmanuel ,  REY, Patrice ,  LIU, Lianjun ,  PACHECO, Sergio

IPC: B81B3/00 ,  H01L41/09

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device (200) formed on a semiconductor substrate (210) comprises a movable structure (203) which is arranged to be movable in response to actuation of an actuating structure. First (206) and second (207) compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer (202) of the actuating structure such that movement of the movable structure (203) is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer (202) of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device (200) is in an inactive state.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而可移动。 可移动结构包括机械结构，其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层，所述致动结构的至少一层，所述至少一层具有与 第一热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性，具有第三热响应特性和第三机械应力特性的第一补偿层，以及具有第四热响应特性的第二补偿层和 第四机械应力响应特性。 第一和第二补偿层被布置成补偿由机械结构和致动结构的至少一个层的不同的第一和第二热响应特性产生的热效应，使得可移动结构的运动基本上与 并且调节由所述机械结构和所述致动结构的所述至少一个层的不同的第一和第二应力响应特性产生的应力效应，使得当所述机电换能器装置 处于非活动状态。

公开(公告)号：EP2370345A2

公开(公告)日：2011-10-05

申请号：EP09805955.3

申请日：2009-11-25

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： LIU, Lianjun ,  PACHECO, Sergio ,  PERRUCHOT, François ,  DEFAY, Emmanuel ,  REY, Patrice

IPC: B81B3/00 ,  H01L41/09

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device (200) formed on a semiconductor substrate comprises a movable structure (203) which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer (204) having a first thermal response characteristic, at least one layer (202) of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer (206). The thermal compensation layer is different to the at least one layer (202) and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而可移动。 可移动结构包括具有至少一个具有第一热响应特性的机械层的机械结构，至少一层致动结构具有与第一热响应特性不同的第二热响应特性，以及至少具有至少 一个热补偿层。 热补偿层不同于至少一个层，并且被布置成补偿由机械层和致动结构的至少一个层产生的热效应，使得可移动结构的运动基本上与温度变化无关 。

公开(公告)号：EP2287110A2

公开(公告)日：2011-02-23

申请号：EP10176478.5

申请日：2006-02-23

Applicant: Pixtronix Inc.

Inventor： Hagood, Nesbitt W. ,  Steyn, Jasper Lodewyk

IPC: B81B3/00 ,  G02B26/04 ,  G09G3/22 ,  B81B7/04 ,  G02B26/08

CPC classification number: G09G3/3433 ,  B81B3/0054 ,  B81B2201/032 ,  B81B2201/038 ,  B81B2201/045 ,  B81B2203/051 ,  G02B26/02 ,  G02B26/0841 ,  G09G2300/0809 ,  G09G2310/0262

Abstract: A display apparatus comprises a modulator for selectively interacting with light in an optical path to form an image on the display apparatus. A controllable first electrostatic actuator provides a first mechanical support for the modulator, the first mechanical support providing a supportive connection from a first location on the modulator to a surface over which the modulator is supported. A second mechanical support provides a supportive connection from a second location on the modulator to the surface. The first electrostatic actuator drives the modulator in a plane substantially parallel to the surface.

Abstract translation: 显示装置包括用于选择性地与光路中的光相互作用以在显示装置上形成图像的调制器。 可调节的第一静电致动器为调制器提供第一机械支撑，第一机械支撑件提供从调制器上的第一位置到支撑调制器的表面的支撑连接。 第二机械支撑件提供从调制器上的第二位置到表面的支撑连接。 第一静电致动器驱动调制器在大致平行于表面的平面中。

公开(公告)号：EP1829819A3

公开(公告)日：2009-06-24

申请号：EP06125198.9

申请日：2006-12-01

Applicant: Honeywell International Inc.

Inventor： Younger, Dan W. ,  Lust, Lisa M

IPC: B81B7/00

CPC classification number: B81B7/0087 ,  B81B2201/032 ,  F28F13/00 ,  F28F2270/00 ,  G05D23/024

Abstract: A thermal isolation structure for use in passively regulating the temperature of a microdevice is disclosed. The thermal isolation structure can include a substrate wafer and a cap wafer defining an interior cavity, and a number of double-ended or single-ended thermal bimorphs coupled to the substrate wafer and thermally actustable between an initial position and a deformed position. The thermal bimorphs can be configured to deform and make contact with the cap wafer at different temperatures, creating various thermal shorts depending on the temperature of the substrate wafer. When attached to a microdevice such as a MEMS device, the thermal isolation structure can be configured to maintain the attached device at a constant temperature or within a particular temperature range.

公开(公告)号：EP1829819A2

公开(公告)日：2007-09-05

申请号：EP06125198.9

申请日：2006-12-01

Applicant: Honeywell International Inc.

Inventor： Younger, Dan W. ,  Lust, Lisa M

IPC: B81B7/00

CPC classification number: B81B7/0087 ,  B81B2201/032 ,  F28F13/00 ,  F28F2270/00 ,  G05D23/024

Abstract: A thermal isolation structure for use in passively regulating the temperature of a microdevice is disclosed. The thermal isolation structure can include a substrate wafer and a cap wafer defining an interior cavity, and a number of double-ended or single-ended thermal bimorphs coupled to the substrate wafer and thermally actustable between an initial position and a deformed position. The thermal bimorphs can be configured to deform and make contact with the cap wafer at different temperatures, creating various thermal shorts depending on the temperature of the substrate wafer. When attached to a microdevice such as a MEMS device, the thermal isolation structure can be configured to maintain the attached device at a constant temperature or within a particular temperature range.

Abstract translation: 公开了一种用于被动调节微型设备的温度的隔热结构。 热隔离结构可以包括衬底晶片和限定内腔的帽晶片，以及耦合到衬底晶片并且在初始位置和变形位置之间可发热的多个双端或单端热双压电晶片。 热双晶体可以被配置成在不同的温度下变形并与盖晶片接触，根据衬底晶片的温度产生各种热短路。 当连接到诸如MEMS器件的微器件时，热隔离结构可以被配置为将连接的器件保持在恒定温度或特定温度范围内。

公开(公告)号：EP1403212B1

公开(公告)日：2007-02-28

申请号：EP03256049.2

申请日：2003-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam, Yun-woo ,  Lee, Suk-han

IPC: B81B3/00 ,  B81C1/00

CPC classification number: H01L41/45 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/00182 ,  H01L41/094 ,  H01L41/0973 ,  H04R1/406 ,  H04R17/02 ,  H04R2420/07

公开(公告)号：EP1721865A2

公开(公告)日：2006-11-15

申请号：EP06075963.6

申请日：2006-04-28

Applicant: Delphi Technologies, Inc.

Inventor： Rich, David B. ,  Crist, Steven M.

IPC: B81B3/00

CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

Abstract: A technique for manufacturing a piezoresistive sensing structure (170) includes a number of process steps. Initially, a piezoresistive element (108) is implanted into a first side of an assembly (102,106,104A) that includes a semiconductor material (102,104A). A passivation layer (110A) is then formed on the first side of the assembly (102,106,104A) over the element (108). The passivation layer (110A) is then removed from selected areas on the first side of the assembly (102,106,104A). A first mask is then provided on the passivation layer (110A) in a desired pattern. A beam (152), which includes the element (108), is then formed in the assembly over at least a portion of the assembly (102,106,104A) that is to provide a cavity (103). The passivation layer (110A) provides a second mask, in the formation of the beam (152), that determines a width of the formed beam (152).

Abstract translation: 制造压阻感测结构（170）的技术包括多个工艺步骤。 最初，将压阻元件（108）注入包括半导体材料（102,104A）的组件（102,106,104A）的第一侧。 然后在元件（108）上方的组件（102,106,104A）的第一侧上形成钝化层（110A）。 然后从组件（102,106,104A）的第一侧上的选定区域去除钝化层（110A）。 然后以期望的图案在钝化层（110A）上提供第一掩模。 然后，包括元件（108）的梁（152）在组件中形成在组件（102,106,104A）的至少一部分上，以提供空腔（103）。 钝化层（110A）在确定所形成的光束（152）的宽度的波束（152）的形成中提供第二掩模。

公开(公告)号：EP1590644B1

公开(公告)日：2006-08-09

申请号：EP03753322.1

申请日：2003-09-23

Applicant: ROBERT BOSCH GMBH

Inventor： LUTZ, Markus ,  FISCHER, Frank

IPC: G01L9/00 ,  H01L41/00 ,  H01L21/20

CPC classification number: G01L9/0042 ,  B81B3/0081 ,  B81B2201/0264 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/0108

Abstract: An epitaxial layer (3, 5) is deposited on a substrate (1) with adjacently grown mono- and poly-crystalline silicon. A region (5, 6) is exposed as a vertically displaceable polycrystalline membrane, in particular for a pressure sensor, by means of etching. The poly/mono transition regions to both sides of the membrane each have an inclined profile such that the mono-crystalline silicon extends over the polycrystalline silicon in the form of a overhang (6) in the membrane region (5, 6). Piezoelements (10) are implanted in the overhang (6).

公开(公告)号：EP1096260B1

公开(公告)日：2005-06-15

申请号：EP99308589.3

申请日：1999-10-29

Applicant: SensoNor asa

Inventor： Lapadatu, Daniel ,  Kvisteroy, Terju ,  Jakobsen, Henrik

IPC: G01P15/08 ,  G01P1/00

CPC classification number: B81B7/0048 ,  B81B3/0072 ,  B81B2201/032 ,  B81B2203/0109 ,  G01C19/5755 ,  G01P1/006 ,  G01P15/0802 ,  G01P2015/0828 ,  Y10S73/01

公开(公告)号：EP1183566B1

公开(公告)日：2004-08-18

申请号：EP00930822.2

申请日：2000-05-19

Applicant: MCNC

Inventor： GOODWIN-JOHANSSON, Scott, Halden

IPC: G02B26/02

CPC classification number: B81C1/00666 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2201/0167 ,  G02B6/353 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/3594 ,  H01H59/0009 ,  H01H2059/0081

Abstract: A MEMS (Micro Electro Mechanical System) electrostatic device operated with lower and more predictable operating voltages is provided. An electrostatic actuator, an electrostatic attenuator of electromagnetic radiation, and a method for attenuating electromagnetic radiation are provided. Improved operating voltage characteristics are achieved by defining a non increasing air gap between the substrate electrode and flexible composite electrode within the electrostatic device. A medial portion of a multilayer flexible composite overlying the electromechanical substrate is held in position regardless of the application of electrostatic force, thereby sustaining the defined air gap. The air gap is relatively constant in separation from the underlying microelectronic surface when the medial portion is cantilevered in one embodiment. A further embodiment provides an air gap that decreases to zero when the medial portion approaches and contacts the underlying microelectronic surface. A moveable distal portion of the flexible composite is biased to curl naturally due to differences in thermal coefficients of expansion between the component layers. In response to electrostatic forces, the distal portion moves and thereby alters the distance separating the flexible composite from the underlaying microelectronic surface. Structures and techniques for controlling bias in the medial portion and the resulting air gap are provided. The electrostatic device may be disposed to selectively clear or intercept the path of electromagnetic radiation. Materials used in the attenuator can be selected to pass, reflect, or absorb various types of electromagnetic radiation. A plurality of electromagnetic attenuators may be disposed in an array and selectively activated in subsets.