中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

260 records (took 0.023 seconds)

    FABRICATION AND STRUCTURE OF ELECTRON EMITTERS COATED WITH MATERIAL SUCH AS CARBON
    203.
    发明公开
    FABRICATION AND STRUCTURE OF ELECTRON EMITTERS COATED WITH MATERIAL SUCH AS CARBON 失效
    用碳等材料涂覆的电子发射体的制作和结构

    公开(公告)号：EP0968509A1

    公开(公告)日：2000-01-05

    申请号：EP98911427.7

    申请日：1998-03-23

    Applicant: Candescent Technologies Corporation ,  ADVANCED TECHNOLOGY MATERIALS, INC.

    Inventor： XU, Xueping ,  BRANDES, George, R. ,  SPINDT, Christopher, J. ,  STANNERS, Colin, D. ,  MACAULAY, John, M.

    IPC: H01J1/30 ,  H01J19/24

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A cathode structure (200, 203, 204) suitable for a flat panel display is provided with coated emitters (229, 239, 230). The emitters are formed with material, typically nickel, capable of growing to a high aspect ration. These emitters are then coated with carbon containing material (240, 241) for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor (301, 305, 313, and 315) to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

    Abstract translation: 适用于平板显示器的阴极结构（200,203,204）设置有涂层发射器（229,239,230）。 发射体由能够生长到高纵横比的材料形成，典型地为镍。 然后用含碳材料（240,241）涂覆这些发射体，以提高化学稳定性并降低功函数。 一种涂覆工艺是DC等离子体沉积工艺，其中乙炔被泵送通过DC等离子体反应器（301,305,313和315）以产生用于涂覆阴极结构的DC等离子体。 替代的涂覆工艺是将原始的基于碳的材料电沉积到发射器的表面上，并随后将原始的基于碳的材料还原为含有碳的材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

    PROCESS TO MODIFY WORK FUNCTIONS USING ION IMPLANTATION
    204.
    发明公开
    PROCESS TO MODIFY WORK FUNCTIONS USING ION IMPLANTATION 失效
    方法对于电子放电电位改性使用离子注入

    公开(公告)号：EP0904159A1

    公开(公告)日：1999-03-31

    申请号：EP97922305.0

    申请日：1997-03-28

    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

    Inventor： MUSKET, Ronald, G. ,  BALOOCH, Medhi ,  SIEKHAUS, Wigbert, J.

    IPC: B05D7 ,  C23C14 ,  H01J1 ,  H01J9 ,  H01L21

    CPC classification number: C23C14/5806 ,  C23C14/48 ,  H01J9/022 ,  H01J2201/30426

    Abstract: The work function of electron emitters can be modified by forming a modifying layer at the surface using low energy ion implantation, in a controlled environment, placing chosen elements below the surface of electron emitters as Cs implanted in Si(100) at four different doses illustrates. Sometimes implanted species are deep enough that they do not react with the atmosphere during subsequent low-temperature processing. Then, species implanted in the emitting surfaces are segregated using elevated temperature treatment of the emitters in vacuum and/or reactive gases. The implanted ions modify the work function at the surface, via thin layers of the implanted species on top of the emitter surfaces, or compounds or alloy layers at the surface of the emitters. Depending on the implanted species, the initial emitter material, and the environment, these layers can either increase or decease the work function of the emitter.

    Structure and method for fabricating of a field emission device
    206.
    发明公开
    Structure and method for fabricating of a field emission device 失效
    Aufbau und Verfahren zur Herstellung einer Feldemissionsanordnung

    公开(公告)号：EP0700063A1

    公开(公告)日：1996-03-06

    申请号：EP94113601.2

    申请日：1994-08-31

    Applicant: International Business Machines Corporation

    Inventor： Greschner, Johann, Dr. ,  Pleshko, Peter, Dr. ,  Schmid, Gerhard, Dr.

    IPC: H01J1/30 ,  H01J9/02 ,  H01J31/12

    CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319

    Abstract: The invention generally relates to the technical field of devices using the effect to emit electrons out of a solid into vacuum due to high electric field strength. Such devices are usually called field emission devices. The invention relates more specifically to the structure of a field emission device, to the method of fabricating a field emission device, and to the use of a multitude of field emission devices in the technical field of flat panel displays. The inventive structure of a field emission device (15) comprises an individual series resistor for each electron emitting tip (1), wherein the series resistor is formed by the tip (1) itself. The tip (1) comprises a body (9) of a first material with high resistivity and an at least partial coating (7) of a second material with low work function, wherein the body (9) of the first material forms the series resistor and the coating (7) of the second material provides for electron emission. The method for fabricating a field emission device (15) uses depositing and sacrificial layer etch back techniques to provide easy and precise control of tip height and shape and also easy and precise control of the tip-to-gate distance and geometry.

    Abstract translation: 本发明一般涉及利用高电场强度将电子从固体发射到真空中的装置的技术领域。 这种装置通常称为场发射装置。 本发明更具体地涉及场发射装置的结构，制造场致发射装置的方法以及在平板显示器的技术领域中使用大量的场发射装置。 场发射器件（15）的本发明结构包括用于每个电子发射尖端（1）的单独的串联电阻器，其中串联电阻器由尖端（1）本身形成。 尖端（1）包括具有高电阻率的第一材料的主体（9）和具有低功函数的第二材料的至少部分涂层（7），其中第一材料的主体（9）形成串联电阻器 并且第二材料的涂层（7）提供电子发射。 用于制造场发射器件（15）的方法使用沉积和牺牲层回蚀技术来提供尖端高度和形状的容易且精确的控制，并且还容易且精确地控制尖端到栅极的距离和几何形状。

Patent Agency Ranking