公开(公告)号：WO2008147731A1

公开(公告)日：2008-12-04

申请号：PCT/US2008/063919

申请日：2008-05-16

Applicant: ASM AMERICA, INC.

Inventor： JACOBS, Loren ,  HALPIN, Mike

IPC: G01K1/08 ,  G01K7/02 ,  G01K7/04

CPC classification number: G01K1/08 ,  G01K7/02 ,  G01K7/04

Abstract: A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.

Abstract translation: 一种具有支撑管的热电偶，其构造成接收一对异种金属线。 热电偶的一对导线在与支撑管的一端相邻的连接处连接。 热电偶还包括附接到支撑管的相对端的盖，其中盖接收一对电线的自由端。 该盖允许一对电线自由地平移以适应一对电线相对于支撑管的热膨胀和收缩的热膨胀和收缩的差异。

公开(公告)号：WO2008070302A2

公开(公告)日：2008-06-12

申请号：PCT/US2007/081970

申请日：2007-10-19

Applicant: ASM AMERICA, INC.

Inventor： HARVEY, Ellis, G.

IPC: B25J15/06

CPC classification number: H01L21/6838

Abstract: A Bernoulli wand (50) for transporting semiconductor wafers. The wand (50) has a head portion (54) having a plurality of gas outlets (74, 75) configured to produce a flow of gas along an upper surface of a wafer to create a pressure differential between the upper surface of the wafer and the lower surface of the wafer. The pressure differential generates a lift force that supports the wafer below the head portion (54) of the wand in a substantially non-contacting manner, employing the Bernoulli principle. The wand (50) has independently controllable gas channels (70, 80) configured to provide flow to different sets of gas outlet holes (74, 75). The gas outlet holes (74, 75) and gas channels (70, 80) are configured to support a wafer using the Bernoulli principle.

Abstract translation: 用于运输半导体晶片的伯努利棒（50）。 所述棒（50）具有头部（54），所述头部具有多个气体出口（74,75），所述气体出口被配置为沿着晶片的上表面产生气流以在所述晶片的所述上表面之间产生压差并且 晶片的下表面。 采用伯努利原理，压力差产生了基本上不接触的方式支撑棒的头部（54）下方晶片的升力。 棒（50）具有独立可控的气体通道（70,80），该气体通道被构造成向不同组的气体出口孔（74,75）提供流动。 气体出口孔（74,75）和气体通道（70,80）被配置为使用伯努利原理来支撑晶片。

公开(公告)号：WO2008051851A1

公开(公告)日：2008-05-02

申请号：PCT/US2007/081960

申请日：2007-10-19

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

Inventor： ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

IPC: C23C16/08 ,  C23C16/32 ,  C23C16/50 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/515

Abstract: Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. The substrate is further exposed to a reducing agent 103. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.

Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物102的气相脉冲和一种或多种等离子体激发的 在其它实施方案中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括同时使反应空间中的底物与金属化合物102和一种或多种等离子体激发的物质 的底物进一步暴露于还原剂103.还原剂除去杂质，包括卤原子和/或氧原子。

公开(公告)号：WO2008011235A2

公开(公告)日：2008-01-24

申请号：PCT/US2007/070777

申请日：2007-06-08

Applicant: ASM AMERICA, INC. ,  WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

Inventor： WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

IPC: H01L21/31

CPC classification number: H01L21/3141 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/28194 ,  H01L21/31612 ,  H01L21/31645

Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).

Abstract translation: 提供了形成金属硅酸盐膜的方法。 所述方法包括使基板与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。 在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。 根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本上均匀的薄膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。

公开(公告)号：WO2007078802A2

公开(公告)日：2007-07-12

申请号：PCT/US2006/047646

申请日：2006-12-14

Applicant: ASM AMERICA, INC. ,  BAUER, Matthias

Inventor： BAUER, Matthias

IPC: H01L21/20 ,  H01L21/36

CPC classification number: C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method for depositing a carbon doped epitaxial semiconductor layer (30) comprises maintaining a pressure of greater than about 700 torr in a process chamber (122) housing a patterned substrate (10) having exposed single crystal material (20). The method further comprises providing a flow of a silicon source gas to the process chamber (122). The silicon source gas comprises dichlorosilane. The method further comprises providing a flow of a carbon precursor (132) to the process chamber (122). The method further comprises selectively depositing the carbon doped epitaxial semiconductor layer (30) on the exposed single crystal material (20).

Abstract translation: 沉积碳掺杂外延半导体层（30）的方法包括在容纳具有暴露的单晶材料（20）的图案化衬底（10）的处理室（122）中保持大于约700托的压力。 该方法还包括向处理室（122）提供硅源气体的流动。 硅源气体包括二氯硅烷。 该方法还包括向处理室（122）提供碳前体（132）的流动。 所述方法还包括在所述暴露的单晶材料（20）上选择性地沉积碳掺杂的外延半导体层（30）。

公开(公告)号：WO2006078666A2

公开(公告)日：2006-07-27

申请号：PCT/US2006/001640

申请日：2006-01-17

Applicant: ASM AMERICA, INC. ,  VERGHESE, Mohith ,  SHERO, Eric ,  BABIC, Darko ,  TERHORST, Herbert ,  PEUSSA, Marko ,  YAN, Min

Inventor： VERGHESE, Mohith ,  SHERO, Eric ,  BABIC, Darko ,  TERHORST, Herbert ,  PEUSSA, Marko ,  YAN, Min

IPC: C30B25/14 ,  C23C16/455

CPC classification number: H01L21/68785 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C30B35/00 ,  H01L21/67236 ,  H01L21/68714 ,  H01L21/68742

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract translation: 原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统构造成将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

公开(公告)号：WO2004040642A1

公开(公告)日：2004-05-13

申请号：PCT/US2003/033214

申请日：2003-10-21

Applicant: ASM AMERICA, INC. ,  ASM INTERNATIONAL N.V.

Inventor： RAAIJMAKERS, Ivo ,  SOININEN, Pekka, J. ,  ELERS, Kai-Erik

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

Abstract translation: 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

公开(公告)号：WO2004009861A2

公开(公告)日：2004-01-29

申请号：PCT/US2003/022393

申请日：2003-07-18

Applicant: ASM AMERICA, INC.

Inventor： TODD, Michael, A. ,  WEEKS, Keith, D. ,  WERKHOVEN, Christiaan, J. ,  POMAREDE, Christophe, F.

IPC: C23C

CPC classification number: C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

Abstract: Multiple sequential processes 140 are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited 100 on a substrate using trisilane as the silicon precursor. The silicon precursor is removed 110 from the reaction chamber. A silicon nitride layer is then formed by nitriding 120 the silicon layer. The nitrogen reactant is removed 110 from the reaction chamber. By repeating these steps 100, 110, 120 and 130, a silicon nitride layer of a desired thickness is formed.

Abstract translation: 在反应室中进行多个连续工艺140以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体将硅层沉积在基板上。 从反应室中除去硅前体110。 然后通过将硅层氮化120来形成氮化硅层。 从反应室中除去氮气反应物110。 通过重复这些步骤100,110,120和130，形成所需厚度的氮化硅层。

公开(公告)号：WO2003100836A1

公开(公告)日：2003-12-04

申请号：PCT/US2003/015843

申请日：2003-05-20

Applicant: ASM AMERICA, INC.

Inventor： POMAREDE, Christophe ,  SHERO, Eric, J. ,  JYLIHA, Olli

IPC: H01L21/00

CPC classification number: H01L21/67017 ,  H01L21/67748 ,  Y10S438/908

Abstract: In accordance with one aspect of the present invention, a method is provided for transporting a workpiece in a semiconductor processing apparatus comprising a transfer chamber, a process chamber, and a gate valve between the transfer chamber and the process chamber. The method comprises vacuum pumping the transfer chamber to achieve a first pressure in the transfer chamber and vacuum pumping the process chamber to achieve a second pressure in the process chamber. An inert gas is flowed into the transfer chamber and shut off in the process chamber. The transfer chamber is isolated from pumping, but pumping continues from the process chamber. The gate valve is opened after isolating the transfer chamber from pumping. The workpiece is then transferred between the transfer chamber and the process chamber. A definitive flow direction from transfer chamber to process chamber is thereby achieved, minimizing risk of back-diffusion.

Abstract translation: 根据本发明的一个方面，提供了一种用于在包括传送室，处理室和闸阀的半导体处理设备中在传送室和处理室之间传输工件的方法。 该方法包括真空泵送传送室以在传送室中实现第一压力，并且真空泵送处理室以在处理室中实现第二压力。 惰性气体流入传送室并在处理室中关闭。 传送室与泵送隔离，但是从处理室继续泵送。 隔离传送室后，闸阀打开。 然后将工件在传送室和处理室之间传送。 从而实现从传送室到处理室的确定的流动方向，从而最小化反向扩散的风险。

公开(公告)号：WO2003025243A3

公开(公告)日：2003-03-27

申请号：PCT/US2002/029032

申请日：2002-09-10

Applicant: ASM AMERICA, INC. ,  ASM MICROCHEMISTRY OY ,  ELERS, Kai Erik ,  LI, Wei-Min

Inventor： ELERS, Kai Erik ,  LI, Wei-Min

IPC: C23C16/455

Abstract: The present methods provide tools for growing conformal metal thin films (150), including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.