公开(公告)号：EP1406283A2

公开(公告)日：2004-04-07

申请号：EP03255979.1

申请日：2003-09-23

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： McClelland, Paul H. ,  Neiman, David L. ,  Leith, Steven ,  Thirukkovalur, Niranjan

IPC: H01J1/304 ,  H01J1/312 ,  H01J3/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  G11B9/10 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426

Abstract: An emission device includes a plurality of electron emitter structures (12) of varied geometry that have a conducting layer (22) deposited thereon. The conducting layer has openings (24) located at tunneling sites (18) for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

Abstract translation: 发射装置包括具有不同几何形状的电子发射器结构（212）; 和沉积在电子发射器结构上的导电层（216）。 每个电子发射器结构具有一个或多个隧道位置。 导电层为每个隧道现场定义一个开口。 还包括形成发射装置的方法的独立权利要求，包括形成电子发射体结构; 通过电沉积方法在电子发射器结构的隧道位置上选择性地沉积标记; 在电子发射体结构上形成导电层; 并且在形成导电层之后从隧道部位移除标记以在导电层中提供开口以暴露隧道部位。

公开(公告)号：EP1008162A1

公开(公告)日：2000-06-14

申请号：EP97942657.4

申请日：1997-09-23

Applicant: Borealis Technical Limited

Inventor： EDELSON, Jonathan, Sidney

IPC: H01J1/30 ,  F25B21/00 ,  H01J45/00

CPC classification number: F25B21/00 ,  F25B2321/003 ,  H01J21/04 ,  H01J21/105 ,  H01J45/00 ,  H01J2201/30426 ,  Y02B30/66

Abstract: Vacuum diode-based devices, including vacuum diode heat pumps and vacuum thermionic generators, are described in which the electrodes are coated with an electride (11, 12). These materials have low work functions, which means that contact potential difference between cathode (1) and anode (2) may be set against the effects of space charge, resulting in an improved device whereby anode (2) and cathode (1) may be set at a greater distance from each other than has been previously envisaged.

公开(公告)号：EP0968509A4

公开(公告)日：2000-02-02

申请号：EP98911427

申请日：1998-03-23

Applicant: CANDESCENT TECH CORP ,  ADVANCED TECH MATERIALS

Inventor： XU XUEPING ,  BRANDES GEORGE R ,  SPINDT CHRISTOPHER J ,  STANNERS COLIN D ,  MACAULAY JOHN M

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure (200, 203, 204) suitable for a flat panel display is provided with coated emitters (229, 239, 230). The emitters are formed with material, typically nickel, capable of growing to a high aspect ration. These emitters are then coated with carbon containing material (240, 241) for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor (301, 305, 313, and 315) to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

公开(公告)号：EP0939418A2

公开(公告)日：1999-09-01

申请号：EP99108499.7

申请日：1997-04-15

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Koga, Keisuke ,  Hori, Yoshikazu ,  Yoshida, Takehito ,  Yamada, Yuka

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

公开(公告)号：EP0928494A1

公开(公告)日：1999-07-14

申请号：EP98931663.0

申请日：1998-06-26

Applicant: MOTOROLA, INC.

Inventor： CHALAMALA, Babu ,  PACK, Sung, P. ,  ROWELL, Charles, A.

IPC: H01J1

CPC classification number: H01J1/3042 ,  H01J29/04 ,  H01J2201/30426

Abstract: An electron emitter (121, 221, 321, 421) includes an electron emitter structure (118) having a passivation layer (120, 220, 320, 420) formed thereon. The passivation layer (120, 220, 320, 420) is made from an oxide selected from a group consisting of the oxides of Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, and combinations thereof. In the preferred embodiment, the electron emitter structure (118) is made from molybdenum, and the passivation layer (120, 220, 320, 420) is made from an emission-enhancing oxide having a work function that is less than the work function of the molybdenum.

公开(公告)号：EP0712147B1

公开(公告)日：1999-06-30

申请号：EP95402451.9

申请日：1995-11-03

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Danroc, Joel

IPC: H01J3/02 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

公开(公告)号：EP0758485A4

公开(公告)日：1997-11-26

申请号：EP95915412

申请日：1995-03-24

Applicant: FED CORP

Inventor： JONES GARY W

IPC: H01J1/304 ,  H01J23/06 ,  H01J29/08 ,  H01J29/20 ,  H01J31/12 ,  H01J37/073 ,  H01J63/04 ,  H01J1/02

CPC classification number: H01J63/04 ,  H01J1/304 ,  H01J23/06 ,  H01J29/085 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2237/06341 ,  H01J2237/08 ,  H01J2237/0835

Abstract: A field emitter device (10) for selective emission of an electron and/or ion beam comprising a substrate member (12) having an array (14) of field emitter elements (16) thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article (260) for producing an output in response to impingement of electron beams thereon, comprising a substrate member (262) on which is disposed an array of phosphor elements (264), with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus (210) comprising such field emitter device and display article, such as a flat panel display.

Abstract translation: 一种用于选择性发射电子和/或离子束的场致发射体装置（10），包括其上具有场发射体元件（16）阵列（14）的衬底元件（12），其中场发射体元件和/或衬底 成员有不同的构造，产生适当的聚焦和/或方向性特征。 还公开了一种用于产生响应于其上的电子束的撞击而产生输出的显示制品（260），该显示制品包括其上设置有荧光体元件阵列（264）的基板构件（262），其上涂覆有类金刚石膜 荧光体元件将荧光体元件保持在基板构件上的适当位置。 还公开了包括这种场发射器装置和显示器物品（例如平板显示器）的场致发射装置（210）。

公开(公告)号：EP0802555A2

公开(公告)日：1997-10-22

申请号：EP97106185.8

申请日：1997-04-15

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Koga, Keisuke ,  Hori, Yoshikazu ,  Yoshida, Takehito ,  Yamada, Yuka

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

Abstract translation: 引入电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 塔形阴极形成在上，下氧化硅膜和引出电极的各个开口中。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小的半径的尖锐尖端部分。 在上下氧化硅膜和阴极的开口中暴露的硅衬底的表面的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

公开(公告)号：EP0782762A1

公开(公告)日：1997-07-09

申请号：EP95931727.0

申请日：1995-09-07

Applicant: FED CORPORATION

Inventor： JONES, Gary, W. ,  KIM, Jong ,  ZIMMERMAN, Steven, M.

IPC: G01R33 ,  G02B27 ,  G09G3 ,  H01J3 ,  H01J9 ,  H01J29 ,  H01J31 ,  H04N5 ,  H04N13

CPC classification number: G02B27/017 ,  G01R33/10 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G02B2027/0132 ,  G02B2027/0136 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H04N5/70 ,  H04N5/7408 ,  H04N5/7491 ,  H04N13/194 ,  H04N13/286 ,  H04N13/324 ,  H04N13/341 ,  H04N13/344 ,  H04N13/361 ,  H04N13/363 ,  H04N13/365 ,  H04N13/398

Abstract: A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.

公开(公告)号：EP0780022A1

公开(公告)日：1997-06-25

申请号：EP95931788.0

申请日：1995-09-07

Applicant: FED CORPORATION

Inventor： JONES, Gary, W. ,  ZIMMERMAN, Steven, M.

IPC: G01R33 ,  G02B27 ,  G09G3 ,  H01J1 ,  H01J3 ,  H01J9 ,  H01J29 ,  H01J31 ,  H04N5 ,  H04N13

CPC classification number: G09G3/001 ,  G01R33/10 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G02B2027/0132 ,  G02B2027/0136 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J29/028 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H04N5/70 ,  H04N5/7408 ,  H04N5/7491 ,  H04N13/194 ,  H04N13/286 ,  H04N13/324 ,  H04N13/341 ,  H04N13/344 ,  H04N13/361 ,  H04N13/363 ,  H04N13/365 ,  H04N13/398

Abstract: A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.