公开(公告)号：EP1584105A2

公开(公告)日：2005-10-12

申请号：EP03799906.7

申请日：2003-12-12

Applicant: IC Mechanics, Inc.

Inventor： CARLEY, L., Richard ,  HSU, Yu-Nu ,  SANTHANAM, Suresh

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer (20). The process involves extending the layers of sacrificial material (12, 16) past the horizontal boundaries of the cap layer (20). The cap layer (20) is supported by pillars (21) formed by a deposition in holes etched through the sacrificial layers (12,16), and the etchant entry holes are formed when the excess sacrificial material (12, 16) is etched away, leaving voids between the pillars (21) supporting the cap.

Abstract translation: 本发明包括一种用于在密封腔中制造MEMS微结构的工艺，其中蚀刻剂进入孔作为制造工艺的副产物产生，而无需额外的步骤来蚀刻顶盖层（20）中的孔。 该过程包括使牺牲材料层（12,16）延伸超过盖层（20）的水平边界。 盖层（20）由通过蚀刻穿过牺牲层（12,16）的孔中的沉积形成的柱（21）支撑，并且当多余的牺牲材料（12,16）被蚀刻掉时形成蚀刻剂进入孔 ，在支撑帽的支柱（21）之间留下空隙。

公开(公告)号：EP1576207A2

公开(公告)日：2005-09-21

申请号：EP03726752.3

申请日：2003-05-07

Applicant: Microfabrica Inc.

Inventor： BANG, Christopher, A.

IPC: C25D1/00

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFABTM formation process), and typically contain features having resolutions within the 1 to 100 µm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and iohardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了用于制造模制结构的模制结构，方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其它模具部件组合，并将模塑材料注入模具中并硬化。 分层结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

公开(公告)号：EP1547969A2

公开(公告)日：2005-06-29

申请号：EP04257172.9

申请日：2004-11-19

Applicant: STMicroelectronics, Inc.

Inventor： Blanchard, Richard A. ,  McAlexander, Joseph C.

IPC: B81B3/00

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/014

Abstract: A released beam structure fabricated in trench and manufacturing method thereof are provided herein. One embodiment of a released beam structure according to the present invention comprises a semiconductor substrate, a trench, a first conducting layer, and a beam. The trench extends into the semiconductor substrate and has walls. The first conducting layer is positioned over the walls of the trench at selected locations. The beam is positioned with the trench and is connected at a first portion thereof to the semiconductor substrate and movable at a second portion thereof. The second portion of the beam is spaced from the walls of the trench by a selected distance. Therefore, the second portion of the beam is free to move in a plane that is perpendicular or parallel to the surface of the substrate, and could be deflected to electrically contact with the walls of the trench in response to a predetermined acceleration force or a predetermined temperature variation applied on the beam structure. Other beam structures such as a beam held at both ends, or a beam held in the middle are also possible. Several beam structures at different angles can be fabricated simultaneously and mechanical etching stops are automatically formed to prevent unwanted overstress conditions when manufacturing several beam structures at the same time. Beam structures can also be manufactured in three orthogonal directions, providing information on acceleration in any direction.

Abstract translation: 中提供了在其沟槽和制造方法制造的释放梁结构。 释放梁结构雅丁到本发明的一个实施例包括半导体衬底，形成沟槽，第一导电层，和一个光束。 所述沟槽延伸到所述半导体衬底和具有壁。 该第一导电层被定位在所述沟槽中的所选择的位置的壁。 束被定位成与所述沟槽和在其与半导体基板和可动的第一部分被连接在第二部分上。 光束的第二部分从所述沟槽的壁由选定的距离间隔开。 因此，梁的第二部分自由地在一个平面内移动并垂直于或平行于基板的表面上，并响应于预定的加速力或预定的可偏转以与所述沟槽的壁电接触 温度变化施加在梁结构。 其它的梁结构：因此，例如在两端保持的光束，或在中间保持的光束是可能的。 在不同角度的若干梁结构可以同时制造，并且机械蚀刻停止被自动形成，以防止不希望的过载条件下当在Sametime制造几个梁结构。 梁结构因此可以在三个正交方向上进行制造，在任何方向上提供的加速度信息。

公开(公告)号：EP1540404A1

公开(公告)日：2005-06-15

申请号：EP03724577.6

申请日：2003-05-14

Applicant: Silicon Light Machines Corporation

Inventor： GUDEMAN, Christopher ,  STAKER, Bryan ,  HUNTER, James ,  YEH, Richard ,  AMM, David, T.

IPC: G02B26/00

CPC classification number: B81C1/00111 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C2201/0109 ,  G02B26/0808

Abstract: A MEM device including one or more movable micro-structures (704) which are ribbon or cantilever structures. The ribbon or cantilevers structures are coupled to a substrate (701) through one or more support regions (703) having a plurality of anchor support features (711,711’) and a plurality of post support features (713,713’). The MEM device is an optical MEM device with a plurality of movable ribbon structures each being supported by opposing ends through support regions (703) each having a plurality of anchor support features (711,711’) and a plurality of post support features (713,713’).

Abstract translation: 包括一个或多个带状或悬臂结构的可移动微结构（704）的MEM装置。 带或悬臂结构通过具有多个锚支撑特征（711,711'）和多个支柱支撑特征（713,713'）的一个或多个支撑区域（703）耦合到衬底（701）。 MEM设备是具有多个可移动带状结构的光学MEM设备，每个可移动带状结构通过支撑区域（703）由相对端支撑，每个支撑区域具有多个锚固支撑特征（711,711'）和多个支柱支撑特征（713,713'） 。

公开(公告)号：EP1520321A1

公开(公告)日：2005-04-06

申请号：EP03742306.8

申请日：2003-06-27

Applicant: Memgen Corporation

Inventor： BROWN, Elliott, R. ,  EVANS, John, D. ,  BANG, Christopher, A. ,  COHEN, Adam, L. ,  LOCKARD, Michael, S. ,  SMALLEY, Dennis, R. ,  GROSSER, Morton

IPC: H01P3/06 ,  H01P5/18 ,  H01P11/00

CPC classification number: H01P11/005 ,  B81B2201/0292 ,  B81C1/00126 ,  B81C2201/0109 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00

Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-­radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

公开(公告)号：EP1460036A1

公开(公告)日：2004-09-22

申请号：EP02805883.2

申请日：2002-12-16

Applicant: Sony Corporation

Inventor： IKEDA, Koichi, c/o Sony Corporation ,  KINOSHITA, Takashi, c/o Sony Corporation

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0119 ,  B81C2201/0125

Abstract: The present invention provides manufacturing methods of electrostatic type MEME devices, in which planarizing the surface of a driving side electrode, reducing fluctuations in the shape of a beam, improving the performance and the uniformity are aimed at.
A manufacturing method according to the present invention includes the steps of: forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer.

Abstract translation: 本发明提供静电型MEME器件的制造方法，其中平面化驱动侧电极的表面，减小光束形状的波动，提高性能和均匀性。 根据本发明的制造方法包括以下步骤：在基板上形成基板侧电极，在形成牺牲层之前或之后形成流体膜，进一步在平坦化形成具有驱动侧电极的光束 流体膜的表面，最后去除牺牲层。

公开(公告)号：EP1454349A2

公开(公告)日：2004-09-08

申请号：EP02793902.4

申请日：2002-11-08

Applicant: Coventor, Incorporated ,  Turnstone Systems Inc.

Inventor： CUNNINGHAM, Shawn, J. ,  TATIC-LUCIC, Sveltana

IPC: H01L21/302 ,  H01L21/4763 ,  H01P1/10 ,  H01H57/00 ,  H02B1/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A method for fabricating a trilayered beam MEMS device includes depositing a sacrificial layer (310) on a substrate and depositing and removing a portion of a first conductive layer on the sacrificial layer (310) to form a first conductive microstructure (312); depositing a structural layer (322) on the first conductive microstructure (312); the sacrificial layer (310), and the substrate (300) and forming a via through the structural layer (322) to the first conductive microstructure (312); depositing a second conductive layer (336) on the structural layer (322) and in the via; forming a second conductive microstructure (324) by removing a portion of the second conductive layer (336), wherein the second conductive microstructure (324) electrically communicates with the first conductive microstructure (312) through the via; and removing a sufficient amount of the sacrificial layer (310) so as to separate the first conductive microstructure (312) from the substrate, wherein the structural layer (322) is supported by the substrate at a first end is freely suspended above the substrate at an opposing second end.

公开(公告)号：EP1454333A1

公开(公告)日：2004-09-08

申请号：EP02797085.4

申请日：2002-11-08

Applicant: Conventor, Incorporated ,  Turnstone Systems Inc.

Inventor： CUNNINGHAM, Shawn, J. ,  DEREUS, Dana, R. ,  Sett, Subham ,  TATIC-LUCIC, Svetlana

IPC: H01H57/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A movable, trilayered microcomponent (108) suspended over a substrate (102) is provided and includes a first electrically conductive layer (116) patterned to define a movable electrode (114). The first metal layer (116) is separated from the substrate (102) by a gap. The microcomponent (108) further includes a dielectric layer formed (112) on the first metal layer (116) and having an end fixed with respect to the substrate (102). Furthermore, the microcomponent (102) includes a second electrically conductive layer (120) formed on the dielectric layer (112) and patterned to define an electrode interconnect (124) for electrically communicating with the movable electrode (114).

公开(公告)号：EP1311455A2

公开(公告)日：2003-05-21

申请号：EP01973667.7

申请日：2001-08-24

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： HSU, Wan-Thai ,  CLARK, John, R. ,  NGUYEN, Clark, T.-C.

IPC: B81B1/00

CPC classification number: B81C1/0019 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0307 ,  B81C1/00626 ,  B81C2201/0109 ,  H03H3/007 ,  H03H3/0072 ,  H03H3/013 ,  H03H9/02362 ,  H03H9/2436 ,  H03H9/46 ,  H03H9/462 ,  H03H9/505 ,  H03H2009/02496

Abstract: A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-drive, lateral micromechanical resonator with submicron electrode-to-resonator capacitor gaps. Briefly, surface-micromachining is used to achieve the structural material for a resonator, while conformal metal-plating is used to implement capacitive transducer electrodes. This technology makes possible a variety of new resonator configurations, including disk resonators and lateral clamped-clamped and free-free flexural resonators, all with significant frequency and Q advantages over vertical resonators. In addition, this technology introduces metal electrodes, which greatly reduces the series resistance in electrode interconnects, thus, minimizing Q-loading effects while increasing the power handling ability of micromechanical resonators.

公开(公告)号：EP1233927A1

公开(公告)日：2002-08-28

申请号：EP00980528.4

申请日：2000-11-17

Applicant: The Regents of the University of California

Inventor： HANSFORD, Derek ,  FERRARI, Mauro

IPC: B81C1/00 ,  B82B1/00 ,  B82B3/00 ,  B01D63/00

CPC classification number: B81C1/00158 ,  B01D67/0058 ,  B01D67/0062 ,  B01D67/0072 ,  B01D69/02 ,  B01D71/02 ,  B01D71/022 ,  B01D2325/02 ,  B01D2325/04 ,  B01D2325/08 ,  B81B2201/06 ,  B81B2201/10 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/053

Abstract: A method of forming a membrane with nanometer scale pores includes forming a sacrificial etch stop layer on a substrate. A base layer is constructed on the sacrificial etch stop layer. Micrometer scale pores are formed within the base layer. A sacrificial base layer is built on the base layer. The sacrificial base layer is removed from selected regions of the base layer to define nanometer scale pores within the base layer. The resultant membrane has sub-fifty nanometer pores formed within it.