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    Method for Manufacturing Hollow Structure
    233.
    发明申请
    Method for Manufacturing Hollow Structure 审中-公开
    空心结构制造方法

    公开(公告)号：US20160280536A1

    公开(公告)日：2016-09-29

    申请号：US14777778

    申请日：2014-03-17

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kippei SUGITA ,  Hiroyuki HASHIMOTO

    IPC: B81C1/00

    CPC classification number: B81C1/00047 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B82Y40/00

    Abstract: A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.

    Abstract translation: 通过制备下部结构制造中空结构，该下部结构包括凹部，通过气相沉积聚合方法在下部结构上沉积由有机膜构成的牺牲膜以用牺牲膜掩埋凹部，除去不需要的部分 牺牲膜，在牺牲膜上形成上部结构，去除不需要的部分，并且通过去除牺牲膜在下部结构和上部结构之间形成气隙。

    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL
    234.
    发明申请
    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 有权
    在电介质和有机材料之间实现良好粘合的方法

    公开(公告)号：US20160221823A1

    公开(公告)日：2016-08-04

    申请号：US15024942

    申请日：2014-09-15

    Applicant: CAVENDISH KINETICS, INC

    Inventor： Mickael RENAULT

    IPC: B81C1/00

    CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

    Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    Abstract translation: 本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。 当形成MEMS器件时，牺牲材料沉积在腔体内的开关元件周围。 牺牲材料最终被去除以释放空腔中的开关元件。 开关元件在其上具有薄的电介质层，以防止蚀刻剂与开关元件的导电材料的相互作用。 在制造期间，介电层沉积在牺牲材料上。 为了确保电介质层和牺牲材料之间的良好粘合性，在沉积其上的电介质层之前，将富硅氧化硅层沉积到牺牲材料上。

    Method for manufacturing micro-structure
    236.
    发明授权
    Method for manufacturing micro-structure 有权
    微结构制造方法

    公开(公告)号：US08785114B2

    公开(公告)日：2014-07-22

    申请号：US13157460

    申请日：2011-06-10

    Applicant: Hideto Kato ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    Inventor： Hideto Kato ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    IPC: G03F7/30 ,  G03F7/40 ,  G03F7/038 ,  G03F7/023 ,  G03F7/20

    CPC classification number: C09D163/04 ,  B81C1/00619 ,  B81C2201/0108 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/30 ,  G03F7/40 ,  G03F7/70466

    Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

    Abstract translation: 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间 。 图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光 牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

    MICROELECTRONIC SUBSTRATE COMPRISING A LAYER OF BURIED ORGANIC MATERIAL
    238.
    发明申请
    MICROELECTRONIC SUBSTRATE COMPRISING A LAYER OF BURIED ORGANIC MATERIAL 审中-公开
    包含有机材料层的微电子基板

    公开(公告)号：US20130207281A1

    公开(公告)日：2013-08-15

    申请号：US13764244

    申请日：2013-02-11

    Applicant: Commissariat A L'Energie Atomique Et Aux Ene Alt

    Inventor： Xavier BAILLIN ,  Jean-Louis Pornin

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00134 ,  B81B3/0018 ,  B81B7/0038 ,  B81C1/00357 ,  B81C2201/0108 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L21/2007

    Abstract: Microelectronic substrate comprising at least: a support layer, a top layer comprising at least one semiconductor, a layer comprising at least one organic material able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and disposed between the support layer and the top layer, and also comprising one or more portions of dielectric material the hardness of which is greater than that of the organic material, disposed in the layer of organic material, and the thickness of which is substantially equal to that of the layer of organic material.

    Abstract translation: 微电子衬底包括至少包括：支撑层，包括至少一个半导体的顶层，包含至少一种有机材料的层，所述至少一种有机材料可以通过使用干蚀刻相对于顶层的半导体选择性地被蚀刻，并且设置在 支撑层和顶层，并且还包括设置在有机材料层中的硬度大于有机材料的硬度的介电材料的一个或多个部分，其厚度基本上等于 有机材料层。

    Method of creating MEMS device cavities by a non-etching process
    240.
    发明授权
    Method of creating MEMS device cavities by a non-etching process 失效
    通过非蚀刻工艺制造MEMS器件腔的方法

    公开(公告)号：US08394656B2

    公开(公告)日：2013-03-12

    申请号：US12831898

    申请日：2010-07-07

    Applicant: Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    Inventor： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    IPC: H01L21/00

    CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

    Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

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