公开(公告)号：US09764944B2

公开(公告)日：2017-09-19

申请号：US14840434

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: H01H51/22 ,  B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09715107B2

公开(公告)日：2017-07-25

申请号：US14599507

申请日：2015-01-18

Applicant: APPLE INC.

Inventor： Yuval Gerson ,  Naftali Chayat ,  Noel Axelrod ,  Alexander Shpunt

IPC: G02B26/10 ,  G01S17/10 ,  G01S17/42 ,  G01S7/481 ,  G02B26/08 ,  B81C1/00 ,  G01S17/89

CPC classification number: G02B26/101 ,  B81B2201/04 ,  B81C1/0015 ,  B81C2201/013 ,  G01S7/4817 ,  G01S17/10 ,  G01S17/42 ,  G01S17/89 ,  G02B26/085

Abstract: A scanning device includes a substrate, which is etched to define an array of two or more parallel rotating members and a gimbal surrounding the rotating members. First hinges connect the gimbal to the substrate and defining a first axis of rotation, about which the gimbal rotates relative to the substrate. Second hinges connect the rotating members to the support and defining respective second, mutually-parallel axes of rotation of the rotating members relative to the support, which are not parallel to the first axis.

公开(公告)号：US09708180B2

公开(公告)日：2017-07-18

申请号：US14684700

申请日：2015-04-13

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: H01L21/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00325 ,  B81B3/0072 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2201/013 ,  B81C2201/0159 ,  B81C2201/0198

Abstract: A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.

公开(公告)号：US09679857B2

公开(公告)日：2017-06-13

申请号：US15266809

申请日：2016-09-15

Applicant: Matthias Merz ,  Youri Victorovitch Ponomarev ,  Mark van Dal

Inventor： Matthias Merz ,  Youri Victorovitch Ponomarev ,  Mark van Dal

IPC: H01L23/52 ,  B81C1/00 ,  B81B7/02 ,  G01P15/06 ,  H01L23/00 ,  B81C99/00 ,  B81B7/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/525 ,  H01L23/528 ,  G01P15/08

CPC classification number: H01L23/564 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00246 ,  B81C99/005 ,  B81C2201/013 ,  B81C2203/0136 ,  B81C2203/0714 ,  G01P15/06 ,  G01P15/0802 ,  G01P2015/0862 ,  G01P2015/0877 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/528

Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

公开(公告)号：US20170107097A1

公开(公告)日：2017-04-20

申请号：US14980297

申请日：2015-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shyh-Wei Cheng ,  Chih-Yu Wang ,  Hsi-Cheng Hsu ,  Ji-Hong Chiang ,  Jui-Chun Weng ,  Shiuan-Jeng Lin ,  Wei-Ding Wu ,  Ching-Hsiang Hu

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B7/0006 ,  B81B2207/012 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/037 ,  B81C2203/0792

Abstract: The present disclosure relates to micro-electromechanical system (MEMS) package that uses polysilicon inter-tier connections to provide for a low parasitic capacitance in MEM device signals, and a method of formation. In some embodiments, the MEMS package has a CMOS substrate with one or more semiconductor devices arranged within a semiconductor body. A MEMS substrate having an ambulatory element is connected to the CMOS substrate by a conductive bonding structure. The conductive bonding structure is arranged on a front-side of the MEMS substrate at a location laterally offset from the ambulatory element. One or more polysilicon vias extend through the conductive MEMS substrate to the bonding structure. The one or more polysilicon vias are configured to electrically couple the MEMS substrate to the CMOS substrate. By connecting the MEMS substrate to the CMOS substrate using the polysilicon vias, the parasitic capacitance and form factor of the MEMS package are reduced.

公开(公告)号：US09628886B2

公开(公告)日：2017-04-18

申请号：US14275337

申请日：2014-05-12

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen

IPC: H04R1/08 ,  B81B3/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R31/003 ,  B81B3/0021 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/08 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003

Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

公开(公告)号：US20170025365A1

公开(公告)日：2017-01-26

申请号：US14660726

申请日：2015-03-17

Applicant: Honeywell International Inc. ,  Cornell University

Inventor： Steven Tin ,  Jeffrey James Kriz ,  Steven J. Eickhoff ,  Jeff A. Ridley ,  Amit Lal ,  Christopher Ober ,  Serhan Ardanuc ,  Ved Gund ,  Alex Ruyack ,  Katherine Camera

IPC: H01L23/00 ,  C23C16/26 ,  C23C16/44 ,  H01L25/16 ,  B81C1/00 ,  H01L21/306 ,  H01L21/268 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  B29C35/02 ,  B81B7/00

CPC classification number: H01L23/564 ,  B29C35/02 ,  B29L2031/34 ,  B81B7/0077 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00333 ,  B81C2201/013 ,  C23C16/26 ,  C23C16/44 ,  H01L21/02118 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/31133 ,  H01L21/76837 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/57 ,  H01L23/573 ,  H01L23/576 ,  H01L23/58 ,  H01L25/16 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/14 ,  H01M8/2475 ,  H01L2924/00

Abstract: Embodiments herein provide for a self-destructing chip including at least a first die and a second die. The first die includes an electronic circuit, and the second die is composed of one or more polymers that disintegrates at a first temperature. The second die defines a plurality of chambers, wherein a first subset of the chambers contain a material that reacts with oxygen in an exothermic manner. A second subset of the chambers contain an etchant to etch materials of the first die. In response to a trigger event, the electronic circuit is configured to expose the material in the first subset of chambers to oxygen in order to heat the second die to at least the first temperature, and is configured to release the etchant from the second subset of the chambers to etch the first die.

Abstract translation: 本文的实施例提供了包括至少第一模具和第二模具的自毁芯片。 第一模具包括电子电路，第二模具由在第一温度下分解的一种或多种聚合物组成。 第二模具限定多个室，其中室的第一子集含有以放热方式与氧反应的材料。 腔室的第二子集含有蚀刻剂以蚀刻第一管芯的材料。 响应于触发事件，电子电路被配置为将室的第一子集中的材料暴露于氧气，以便将第二管芯加热至少第一温度，并且被配置为将蚀刻剂从第二子集 这些腔室蚀刻第一个模具。

公开(公告)号：US20170022048A1

公开(公告)日：2017-01-26

申请号：US15284868

申请日：2016-10-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  G06F17/50 ,  B81C1/00 ,  H01H59/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

公开(公告)号：US20170005045A1

公开(公告)日：2017-01-05

申请号：US15266809

申请日：2016-09-15

Applicant: Matthias Merz ,  Youri Victorovitch Ponomarev ,  Mark van Dal

Inventor： Matthias Merz ,  Youri Victorovitch Ponomarev ,  Mark van Dal

IPC: H01L23/00 ,  H01L23/528 ,  G01P15/06 ,  B81B7/00 ,  H01L23/525 ,  H01L21/768 ,  H01L23/522 ,  B81C1/00

CPC classification number: H01L23/564 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00246 ,  B81C99/005 ,  B81C2201/013 ,  B81C2203/0136 ,  B81C2203/0714 ,  G01P15/06 ,  G01P15/0802 ,  G01P2015/0862 ,  G01P2015/0877 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/528

Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种半导体器件，其包括由电介质层分隔的图案化金属层的堆叠，所述堆叠包括第一导电支撑结构和第二导电支撑结构以及空腔，其中包括至少一个金属部分的惯性质量元件导电耦合到 所述第一支撑结构和所述第二支撑结构由相应的导电连接部分组成，所述导电连接部分中的至少一个设计成使所述惯性质量元件断裂，所述加速力超过由所述导电连接部分的尺寸限定的阈值 。 还公开了制造这种半导体器件的方法。

公开(公告)号：US20160363609A1

公开(公告)日：2016-12-15

申请号：US15148086

申请日：2016-05-06

Applicant: Texas Instruments Incorporated

Inventor： IRA OAKTREE WYGANT ,  PETER B. JOHNSON

IPC: G01P15/125 ,  B81C1/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/24

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

Abstract: A method of forming a capacitive micro-electro-mechanical system (MEMS) sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell. A patterned dielectric layer including a thick dielectric region and a thin dielectric region is formed on a top side of a first substrate. A second substrate is bonded to the thick dielectric region to provide at least one sealed micro-electro-mechanical system (MEMS) cavity. The second substrate is thinned to reduce a thickness of said second substrate to provide a membrane layer. Vias are etched through the membrane layer and said thick dielectric region extending into the first substrate to form embedded vias. A dielectric liner which lines the embedded vias is formed within the first substrate. The embedded vias are filed with electrically conductive TSV filler material to form a plurality of through-substrate vias (TSVs), said plurality of TSVs extending to at least a top of said membrane layer. A patterned metal cap layer including metal caps is formed on top of said plurality of TSVs. Trenches are etched through regions of the membrane layer for releasing a first portion of the membrane layer over said MEMS cavity to provide a MEMS electrode and to define a fixed electrode. A third substrate including an inner cavity and outer protruding portions framing said inner cavity is bonded to the thick dielectric. The protruding portions are bonded to the thick dielectric region and, together with said first substrate vacuum, seals said MEMS electrode. The plurality of TSVs on a bottom side of said first substrate are exposed.

Abstract translation: 形成电容式微机电系统（MEMS）传感器装置的方法包括具有至少一个电容式MEMS传感器单元的至少一个电容式MEMS传感器元件。 包括厚电介质区域和薄介电区域的图案化电介质层形成在第一衬底的顶侧上。 第二衬底被结合到厚电介质区域以提供至少一个密封的微机电系统（MEMS）空腔。 第二衬底被薄化以减小所述第二衬底的厚度以提供膜层。 通过膜层蚀刻通孔，并且延伸到第一衬底中的所述厚电介质区域形成嵌入的通孔。 在第一基板内形成有嵌入通孔的电介质衬垫。 嵌入的通孔与导电TSV填充材料一起放置以形成多个穿通基板通孔（TSV），所述多个TSV延伸到所述膜层的至少顶部。 在所述多个TSV的顶部上形成包括金属盖的图案化金属盖层。 通过膜层的区域蚀刻沟槽，以在所述MEMS空腔上释放膜层的第一部分，以提供MEMS电极并限定固定电极。 包括内腔的第三基板和框架所述内腔的外突出部分结合到厚电介质。 突出部分结合到厚电介质区域，并与所述第一衬底真空一起密封所述MEMS电极。 在所述第一基板的底侧上的多个TSV暴露。