公开(公告)号：US20190062157A1

公开(公告)日：2019-02-28

申请号：US16015640

申请日：2018-06-22

Applicant: HITACHI, LTD.

Inventor： Keiji WATANABE ,  Hiroyasu SHICHI ,  Misuzu SAGAWA ,  Toshiyuki MINE ,  Daisuke RYUZAKI

IPC: B81C99/00 ,  B81C1/00 ,  H01J37/317 ,  H01J37/304 ,  H01J37/147 ,  G03F7/20

CPC classification number: B81C99/0025 ,  B81C1/00412 ,  B81C99/0065 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0198 ,  G03F7/2059 ,  H01J37/1474 ,  H01J37/304 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/28 ,  H01J2237/31749 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

公开(公告)号：US09925769B2

公开(公告)日：2018-03-27

申请号：US15174275

申请日：2016-06-06

Applicant: OCE-TECHNOLOGIES B.V.

Inventor： Hans Reinten ,  Hendrik J. Stolk ,  Alex N. Westland

IPC: B41J2/14 ,  H01L23/00 ,  B41J2/16 ,  B81C1/00

CPC classification number: B41J2/14201 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2002/14362 ,  B81C1/00269 ,  B81C2201/0143 ,  B81C2203/032 ,  H01L24/03

Abstract: A MEMS chip having at least two chip components bonded together by means of an adhesive layer that is applied to at least one of two mating bonding surfaces of the two components, wherein a pattern of finely distributed micro-cavities is formed in at least one of the two mating bonding surfaces, said micro-cavities being arranged to accommodate a major part of the adhesive.

公开(公告)号：US09824859B1

公开(公告)日：2017-11-21

申请号：US14980884

申请日：2015-12-28

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/244

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US09760084B2

公开(公告)日：2017-09-12

申请号：US14169336

申请日：2014-01-31

Applicant: PowerPhotonic Ltd.

Inventor： Matthew Oren Currie ,  Simon Clovis Younger ,  Roy McBride

IPC: G06F19/00 ,  G05B19/418

CPC classification number: G05B19/41865 ,  B81C2201/0143 ,  Y02P90/20 ,  Y02P90/26 ,  Y10S977/889

Abstract: A process for the manufacture of custom freeform optical elements utilizing parameterized modelling. A system for the automatic manufacture of a custom optical element is also described with the manufacturing being by laser micro-machining. The process and system allow customers to specify and order via a web interface and so reduce engineering time, overhead and cost.

公开(公告)号：US20170044010A1

公开(公告)日：2017-02-16

申请号：US15118686

申请日：2015-03-31

Applicant: Mitsubishi Electric Corporation

Inventor： Tomoya HIRATA ,  Taiki NAKANISHI ,  Hiromoto INOUE ,  Yoshitatsu KAWAMA

IPC: B81C1/00 ,  G01F1/692 ,  B81B3/00

CPC classification number: B81C1/00674 ,  B81B3/0075 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/99 ,  B81C1/00666 ,  B81C2201/0102 ,  B81C2201/0111 ,  B81C2201/0143 ,  B81C2201/0161 ,  B81C2201/053 ,  G01F1/6845 ,  G01F1/692

Abstract: There is provided a sensor element including: a semiconductor base member having a first main surface and a second main surface located opposite to the first main surface, and having a cavity structure formed on the second main surface side; and a detection element formed on the first main surface side in a region where the cavity structure is formed, the second main surface of the semiconductor base member including a convexly and concavely shaped portion, and a tip of a convex portion of the convexly and concavely shaped portion having a curved shape.

Abstract translation: 提供了一种传感器元件，包括：半导体基底构件，具有第一主表面和与第一主表面相对的第二主表面，并且具有形成在第二主表面侧上的腔结构; 以及检测元件，其形成在形成有所述空腔结构的区域中的所述第一主面侧，所述半导体基座的所述第二主面包括凸形凹形部，所述凸部和凸部的凸部的前端 形状部分具有弯曲形状。

公开(公告)号：US09556521B1

公开(公告)日：2017-01-31

申请号：US14809985

申请日：2015-07-27

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/06 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。

公开(公告)号：US20140217066A1

公开(公告)日：2014-08-07

申请号：US14174235

申请日：2014-02-06

Applicant: SEIKO EPSON CORPORATION

Inventor： Kazuhiro GOMI

IPC: C03C15/00 ,  H01L21/768 ,  H01L23/498

CPC classification number: H01L23/49827 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1645 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/268 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon substrate processing method includes forming an etching mask which has an opening portion, on a surface of a silicon substrate, forming an etching guide hole in the opening portion on the silicon substrate, and forming a through-hole which passes through the silicon substrate, by applying an etching treatment onto the silicon substrate in which the etching guide hole is formed. In the forming of the guide hole, the etching guide hole passing through the silicon substrate is formed by irradiating the opening portion with a laser beam a plurality of times, with a cooling period between each instance of irradiation with the laser beam.

Abstract translation: 硅衬底处理方法包括在硅衬底的表面上形成具有开口部分的蚀刻掩模，在硅衬底的开口部分中形成蚀刻引导孔，并形成通过硅衬底的通孔 通过对形成有蚀刻导向孔的硅基板进行蚀刻处理。 在导向孔的形成中，穿过硅衬底的蚀刻引导孔通过激光束多次照射开口部分而形成，在每次激光束照射之间具有冷却期间。

公开(公告)号：US20140147346A1

公开(公告)日：2014-05-29

申请号：US13818081

申请日：2011-08-22

Applicant: Girish Chitnis ,  Babak Ziaie ,  Zhenwen Ding

Inventor： Girish Chitnis ,  Babak Ziaie ,  Zhenwen Ding

IPC: B01L3/00 ,  B23K26/08 ,  B23K26/36

CPC classification number: B01L3/502707 ,  B23K26/082 ,  B23K26/361 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0143 ,  G01N27/44791 ,  H01L51/0023

Abstract: A patterned circuit, including a hydrophilic substrate, a hydrophobic layer formed on the hydrophilic substrate, and a pattern formed in the hydrophobic layer to expose the hydrophilic substrate.

Abstract translation: 包括亲水基底，形成在亲水基底上的疏水层的图案化电路，以及形成在疏水层中以露出亲水基底的图案。

公开(公告)号：US20130265730A1

公开(公告)日：2013-10-10

申请号：US13910340

申请日：2013-06-05

Applicant: THE AEROSPACE CORPORATION

Inventor： Henry Helvajian

IPC: H05K7/02

CPC classification number: H05K7/02 ,  B01J19/0093 ,  B01J2219/00824 ,  B01J2219/00835 ,  B01J2219/00853 ,  B01J2219/00941 ,  B01J2219/00948 ,  B01L3/502707 ,  B01L2300/0654 ,  B01L2300/0681 ,  B01L2300/0867 ,  B01L2300/0874 ,  B81B7/0077 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C99/0095 ,  B81C2201/0143 ,  B81C2201/0159 ,  G02B2006/12035 ,  G02B2006/12171 ,  H01P3/121 ,  H05K1/0306 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0023 ,  H05K3/101 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices may include one or more of chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

Abstract translation: 使用用于将器件嵌入可光可陶瓷陶瓷体积内的光学结构化工艺步骤来处理可光电陶瓷，该器件可以包括化学，机械，电子，电磁，光学和声学设备中的一种或多种，​​所有这些都部分地通过在 陶瓷或通过陶瓷体的表面端口设置器件材料，使用内部连接和表面接口互连这些器件。

公开(公告)号：US20130120414A1

公开(公告)日：2013-05-16

申请号：US13294114

申请日：2011-11-10

Applicant: Teruo Sasagawa

Inventor： Teruo Sasagawa

IPC: G06F15/00 ,  B05D3/06 ,  G02B26/00

CPC classification number: B81C1/00492 ,  B81C1/00269 ,  B81C2201/0143 ,  B81C2203/019

Abstract: A laser absorption layer is first selectively formed in a seal pattern region surrounding an array of electromechanical systems elements, followed by depositing an antistiction layer as a blanket layer over the substrate and the laser absorption layer. The antistiction layer is then selectively removed from the seal pattern using a laser. An epoxy sealing material is provided in the seal pattern where the antistiction layer was removed and a backplate is sealed to the substrate using epoxy.

Abstract translation: 首先在围绕机电系统元件的阵列的密封图案区域中选择性地形成激光吸收层，随后在基板和激光吸收层上沉积抗静电层作为覆盖层。 然后使用激光从密封图案中选择性地去除抗静电层。 在密封图案中提供环氧密封材料，其中除去抗静电层，并且使用环氧树脂将背板密封到基底上。