公开(公告)号：EP0712021B1

公开(公告)日：2001-09-26

申请号：EP95116566.1

申请日：1995-10-20

Applicant: DAEWOO ELECTRONICS CO., LTD

Inventor： Min, Yong-Ki, Video Research Center

IPC: G02B26/08

CPC classification number: B81C1/00214 ,  B81B2201/032 ,  B81B2201/042 ,  B81C1/00174 ,  B81C2201/0109 ,  G02B26/0858 ,  H04N9/30

公开(公告)号：EP0895276A1

公开(公告)日：1999-02-03

申请号：EP97830406.1

申请日：1997-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Ferrari, Paolo ,  Vigna, Benedetto

IPC: H01L21/00 ,  H01L21/762 ,  G01L9/00 ,  F16C11/06

CPC classification number: B81C1/00246 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2203/0742 ,  G01P15/0802 ,  G01P15/097 ,  H01L21/764

Abstract: The process comprises forming a buried sacrificial layer (5) of porous silicon in the starting substrate (2) and then a single-crystal epitaxial layer (7) intended to accommodate both the sensitive element and the integrated circuit. After forming electronic components (12, 18) in the epitaxial layer, the epitaxial layer (7) is anisotropically etched over the buried sacrificial layer (5) to form trenches (27) through which the buried sacrificial layer is then etched and removed. The suspended mass (30) thus obtained has high mechanical properties, high thickness, the process is wholly compatible with standard microelectronics techniques and can be implemented at low cost.

Abstract translation: 该工艺包括在起始衬底（2）中形成多孔硅的掩埋牺牲层（5），然后形成旨在兼容敏感元件和集成电路的单晶外延层（7）。 在外延层中形成电子部件（12,18）之后，在掩埋牺牲层（5）上各向异性地蚀刻外延层（7）以形成沟槽（27），然后通过该沟槽蚀刻和去除掩埋牺牲层。 这样获得的悬浮物（30）具有高机械性能，高厚度，该工艺与标准微电子技术完全兼容，并且可以以低成本实现。

公开(公告)号：EP0869556A1

公开(公告)日：1998-10-07

申请号：EP98104739.2

申请日：1998-03-17

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Tobben, Dirk ,  Weigand, Peter

IPC: H01L27/108 ,  H01L21/32

CPC classification number: B81C1/00111 ,  B81C2201/0109 ,  B81C2201/0159 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/88 ,  H01L28/91 ,  H01L28/92

Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 µm. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., depositing a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.

Abstract translation: 一种用于形成微结构的方法包括光刻地形成垂直延伸的柱的一部分，以提供第一结构。 可流动的牺牲材料沉积在第一结构的表面上。 可流动的牺牲物质地从柱的顶表面和侧壁部分流出到衬底的表面的相邻部分上以提供第二结构。 非牺牲材料沉积在第二结构的表面上。 沉积非牺牲材料以符合第二结构的表面。 非牺牲材料沉积在牺牲材料上，在侧壁部分上方并在柱的顶表面上方。 选择性地去除沉积的牺牲材料，同时非牺牲材料保留以形成具有由非牺牲材料提供的水平构件的第三结构。 水平构件通过柱的下部支撑在基板的表面上方预定的距离。 可流动材料是可流动的氧化物，例如氢倍半硅氧烷玻璃，柱的宽度小于20μm。 用单个光刻步骤形成的所得结构用于支撑沉积在其上的电容器。 电容器形成为一系列沉积步骤; 即在支撑结构的表面上沉积第一导电层; 在导电层上沉积介电层; 以及在所述电介质层上沉积第二导电层。

公开(公告)号：EP0674181A2

公开(公告)日：1995-09-27

申请号：EP95104148.2

申请日：1995-03-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Shiomi, Hiromu, c/o Itami Works of Sumimoto Elec. ,  Nishibayahi. Yoshiki, c/o Itami Works of Sumimoto ,  Shikata, Shin-ichi, c/o Itami Works of Sumimoto

IPC: G01P15/08 ,  G01L1/18

CPC classification number: G01P15/0802 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/034 ,  B81B2201/035 ,  B81B2201/054 ,  B81B2203/0118 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00682 ,  B81C2201/0109 ,  G01H3/08 ,  G01H11/00 ,  G01H11/06 ,  G01P15/125 ,  G01P2015/0828

Abstract: A micro mechanical component of the present invention comprises a base, and at least one drive portion supported on the base and relatively driving to the base, in which the drive portion is formed from a diamond layer. Thus, because the drive portion has excellent mechanical strength and modulus of elasticity, the operational performance can be greatly improved as a micro mechanical component processed in a fine shape, from the conventional level. Further, because the drive portion exhibits excellent device characteristics under severe circumstances, the range of applications as a micro mechanical component can be widely expanded from the conventional range.

Abstract translation: 本发明的微型机械部件包括底座以及至少一个驱动部分，其支撑在基座上并相对地驱动到基座，驱动部分由金刚石层形成。 因此，由于驱动部具有优异的机械强度和弹性模量，因此从传统的水平，作为微细的机械部件处理成微细的机械部件，可以大大提高其操作性能。 此外，由于驱动部在恶劣的环境下表现出优异的装置特性，所以作为微机械部件的应用范围可以从传统的范围得到广泛的扩展。

公开(公告)号：EP0665590A2

公开(公告)日：1995-08-02

申请号：EP95300521.2

申请日：1995-01-27

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yagi, Takayuki, c/o Canon K.K. ,  Akaike, Masatake, c/o Canon K.K.

IPC: H01L23/00 ,  H02N1/00 ,  G01B7/00 ,  H01H59/00 ,  H02K57/00 ,  G01B7/34

CPC classification number: B81C1/0092 ,  B81B2203/0118 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2203/031 ,  H01H59/0009 ,  H02N1/006

Abstract: A microstructure comprising a substrate (1), a patterned structure (beam member) (2) suspended over the substrate (1) with an air-space (4) therebetween and supporting structure (3) for suspending the patterned structure (2) over the substrate (1).
The microstructure is prepared by using a sacrificial layer (7) which is removed to form the space between the substrate (1) and the patterned structure (2) adhered to the sacrificial layer. In the case of using resin as the material of the sacrificial layer, the sacrificial layer can be removed without causing sticking, and an electrode can be provided on the patterned structure.
The microstructure can have application as electrostatic actuator etc., depending on choice of shape and composition.

Abstract translation: 一种微结构，其包括衬底（1），悬挂在衬底（1）上的图案化结构（梁构件）（2），其间具有空气空间（4）和用于将图案化结构（2）悬挂在其上的支撑结构（3） 基板（1）。 通过使用牺牲层（7）来制备微结构，所述牺牲层被除去以形成衬底（1）和附着到牺牲层的图案化结构（2）之间的空间。 在使用树脂作为牺牲层的材料的情况下，可以除去牺牲层而不引起粘附，并且可以在图案化结构上提供电极。 根据形状和组成的选择，微结构可以作为静电致动器等应用。

公开(公告)号：EP0596455A1

公开(公告)日：1994-05-11

申请号：EP93117739.8

申请日：1993-11-02

Applicant: CSEM, Centre Suisse d'Electronique et de Microtechnique S.A.

Inventor： Moret, Jean-Marc

IPC: C23C16/00 ,  H01H1/00

CPC classification number: B81C1/0015 ,  B81C2201/0109 ,  B81C2201/0132 ,  C23C16/01 ,  H01H1/0036

Abstract: L'invention concerne un procédé de fabrication d'au moins un élément de structure (14) de forme générale allongée sur un substrat (12) en un premier matériau et présentant une face supérieure (13) sensiblement plane, ledit élément (14), réalisé en un deuxième matériau, comprenant au moins une première aile (14a) parallèle à un plan perpendiculaire à ladite face supérieure (13).

Abstract translation: 用于在由第一材料制成并且具有基本平坦的上表面（14）的基底（12）上制造至少一种细长形状结构部件（14）的方法，所述部件（14）由第二 材料，包括平行于垂直于所述上表面（13）的平面的至少一个第一翼（14a）。

公开(公告)号：EP3328093A1

公开(公告)日：2018-05-30

申请号：EP17203756.6

申请日：2017-11-27

Applicant: Semiconductor Manufacturing International Corporation (Beijing) ,  Semiconductor Manufacturing International Corporation (Shanghai)

Inventor： WANG, Qiang

IPC: H04R19/00 ,  H04R31/00

CPC classification number: H04R9/08 ,  B81B3/0086 ,  B81B2201/0257 ,  B81B2203/04 ,  B81C1/00698 ,  B81C2201/0109 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

Abstract: A microphone includes a substrate, an opening extending through the substrate, a first electrode plate layer on the opening, a second electrode plate layer spaced apart from the first electrode plate layer, a support structure layer on the substrate including an electrode attachment portion operable to attach the second electrode plate layer and a stopper operable to block contact between the first electrode plate layer and the second electrode plate layer, a cavity delineated by the support structure layer, the first electrode plate layer, and the substrate, and a conductive material layer on the support structure layer and spaced apart from the second electrode plate layer. The microphone has a significantly lower leakage current than conventional semiconductor microphones.

公开(公告)号：EP3296254A1

公开(公告)日：2018-03-21

申请号：EP16792161.8

申请日：2016-05-10

Applicant: CSMC Technologies Fab2 Co., Ltd.

Inventor： JING, Errong

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81C1/00182 ,  B81B7/02 ,  B81B2201/0207 ,  B81C1/00 ,  B81C1/0015 ,  B81C1/00476 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/0132 ,  G01J5/20

Abstract: An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate (100); forming a first dielectric layer (200) on the substrate (100); patterning the first dielectric layer (200) to prepare a first film body (210) and a cantilever beam (220) connected to the first film body (210); forming a sacrificial layer (300) on the first dielectric layer (200); patterning the sacrificial layer (300) located on the first film body (210) to make a recess portioned portion (310) for forming a support structure (420), with the first film body (210) being exposed at the bottom of the recess portioned portion (310); forming a second dielectric layer (400) on the sacrificial layer (300); patterning the second dielectric layer (400) to make the second film body (410) and the support structure (420), with the support structure (420) being connected to the first film body (210) and the second film body (410); and removing part of the substrate under the first film body (210) and removing the sacrificial layer (300) to obtain the MEMS double-layer suspension microstructure. In addition, an MEMS infrared detector is also disclosed.

Abstract translation: 一种MEMS双层悬浮微结构制造方法，包括：提供衬底（100）; 在衬底（100）上形成第一介电层（200）; 图案化所述第一介电层（200）以制备连接到所述第一膜体（210）的第一膜体（210）和悬臂梁（220）; 在第一介电层（200）上形成牺牲层（300）; 图案化位于第一膜体（210）上的牺牲层（300）以形成用于形成支撑结构（420）的凹陷部分（310），其中第一膜体（210）暴露在凹陷的底部 分部分（310）; 在牺牲层（300）上形成第二介电层（400）; （420）连接到第一膜体（210）和第二膜体（410），图案化第二电介质层（400）以制造第二膜体（410）和支撑结构（420） ; 去除所述第一膜体下方的部分衬底，去除所述牺牲层，得到MEMS双层悬浮微结构。 另外，还公开了一种MEMS红外探测器。

公开(公告)号：EP3053181A1

公开(公告)日：2016-08-10

申请号：EP14781789.4

申请日：2014-09-24

Applicant: Cavendish Kinetics, Inc.

Inventor： RENAULT, Mickael ,  JOSHI, Vikram ,  VAN KAMPEN, Robertus Petrus ,  MAGUIRE, Thomas L. ,  KNIPE, Richard L.

IPC: H01H59/00 ,  H01G5/16

CPC classification number: H01G5/16 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00166 ,  B81C2201/0104 ,  B81C2201/0109 ,  H01G5/011 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

Abstract translation: 本发明一般涉及MEMS器件及其制造方法。 RF电极以及因此其上的电介质层具有基本上与可移动板的底表面的接触面积匹配的弯曲的上表面。 因此，可移动板能够与电介质层良好的接触，从而实现良好的电容。

公开(公告)号：EP3049194A1

公开(公告)日：2016-08-03

申请号：EP14766694.5

申请日：2014-09-15

Applicant: Koninklijke Philips N.V.

Inventor： DIRKSEN, Peter ,  MULDER, Marcel ,  LEEUWESTEIN, Adriaan

IPC: B06B1/02

CPC classification number: B06B1/0292 ,  B81B3/0021 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/013 ,  H02N1/006

Abstract: Disclosed is a method of manufacturing a capacitive micro-machined ultrasonic transducer (CMUT) device comprising a first electrode (112) on a substrate (110) and a second electrode (122) embedded in an electrically insulating membrane, the first electrode and the membrane being separated by a cavity (130) formed by the removal of a sacrificial material (116) in between the first electrode and the membrane, the method comprising forming a membrane portion (22) on the second electrode and a further membrane portion (24) extending from the membrane portion towards the substrate alongside the sacrificial material, wherein the respective thicknesses the membrane portion and the further membrane portion exceed the thickness of the sacrificial material prior to forming said cavity. A CMUT device manufactured in accordance with this method and an apparatus comprising such a CMUT device are also disclosed.